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公开(公告)号：US11984480B2
公开(公告)日：2024-05-14
申请号：US17270230
申请日：2020-06-02
发明人： Taro Enokizono , Tsutomu Hori , Taro Nishiguchi
CPC分类号： H01L29/1608 , C30B29/36
摘要： A silicon carbide epitaxial substrate includes a silicon carbide substrate, a first silicon carbide epitaxial layer, and a second silicon carbide epitaxial layer. The silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The first silicon carbide epitaxial layer is in contact with a whole of the first main surface. The second silicon carbide epitaxial layer is in contact with a whole of the second main surface. A carrier concentration of the silicon carbide substrate is higher than a carrier concentration of each of the first silicon carbide epitaxial layer and the second silicon carbide epitaxial layer.
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公开(公告)号：US20210296443A1
公开(公告)日：2021-09-23
申请号：US17337466
申请日：2021-06-03
发明人： Keiji Wada , Tsutomu Hori , Taro Nishiguchi
IPC分类号： H01L29/06 , H01L29/16 , H01L29/04 , H01L21/02 , H01L29/66 , C30B29/36 , C30B25/20 , C30B25/18
摘要： A silicon carbide epitaxial substrate includes a silicon carbide single crystal substrate and a silicon carbide layer. In a direction parallel to a central region, a ratio of a standard deviation of a carrier concentration of the silicon carbide layer to an average value of the carrier concentration of the silicon carbide layer is less than 5%. The average value of the carrier concentration is more than or equal to 1×1014 cm−3 and less than or equal to 5×1016 cm−3. In the direction parallel to the central region, a ratio of a standard deviation of a thickness of the silicon carbide layer to an average value of the thickness of the silicon carbide layer is less than 5%. The central region has an arithmetic mean roughness (Sa) of less than or equal to 1 nm. The central region has a haze of less than or equal to 50.
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公开(公告)号：US10734222B2
公开(公告)日：2020-08-04
申请号：US16745672
申请日：2020-01-17
发明人： Taro Nishiguchi , Yu Saitoh , Hirofumi Yamamoto
IPC分类号： H01L31/0312 , H01L21/02 , H01L21/205 , H01L21/04 , C03B25/02 , H01L21/306 , C30B29/00 , H01L21/311
摘要： A semiconductor stack includes a substrate made of silicon carbide, and an epi layer disposed on the substrate and made of silicon carbide. An epi principal surface, which is a principal surface opposite to the substrate, of the epi layer is a carbon surface having an off angle of 4° or smaller relative to a c-plane. In the epi principal surface, a plurality of first recessed portions having a rectangular circumferential shape in a planar view is formed. Density of a second recessed portion that is formed in the first recessed portions and is a recessed portion deeper than the first recessed portions is lower than or equal to 10 cm−2 in the epi principal surface.
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公开(公告)号：US10472736B2
公开(公告)日：2019-11-12
申请号：US15933966
申请日：2018-03-23
发明人： Taro Nishiguchi , Jun Genba , Hironori Itoh , Tomoaki Hatayama , Hideyuki Doi
摘要： An epitaxial wafer includes a silicon carbide film having a first main surface. A groove portion is formed in the first main surface. The groove portion extends in one direction along the first main surface. Moreover, a width of the groove portion in the one direction is twice or more as large as a width of the groove portion in a direction perpendicular to the one direction. Moreover, a maximum depth of the groove portion from the first main surface is not more than 10 nm.
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公开(公告)号：US10396163B2
公开(公告)日：2019-08-27
申请号：US15750606
申请日：2016-08-04
发明人： Keiji Wada , Hironori Itoh , Takemi Terao , Kenji Kanbara , Taro Nishiguchi
IPC分类号： H01L29/15 , H01L29/16 , C30B25/20 , C30B29/36 , H01L21/02 , C23C16/32 , H01L29/04 , H01L29/66 , H01L29/78
摘要： A silicon carbide epitaxial substrate includes a silicon carbide single crystal substrate and a silicon carbide layer. The silicon carbide single crystal substrate has a first main surface. The silicon carbide layer is on the first main surface. The silicon carbide layer includes a second main surface opposite to a surface thereof in contact with the silicon carbide single crystal substrate. The second main surface has a maximum diameter of more than or equal to 100 mm. The second main surface includes an outer peripheral region which is within 3 mm from an outer edge of the second main surface, and a central region surrounded by the outer peripheral region. The central region has a haze of less than or equal to 75 ppm.
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6.发明申请公开(公告)号：US20180363166A1
公开(公告)日：2018-12-20
申请号：US15780689
申请日：2016-10-11
发明人： Keiji Wada , Tsutomu Hori , Taro Nishiguchi
IPC分类号： C30B29/36 , C30B25/20 , C23C16/32 , C30B25/18 , H01L21/02 , H01L29/16 , H01L29/04 , H01L29/34 , H01L29/78 , H01L21/04 , H01L21/78 , H01L29/66
摘要： A silicon carbide epitaxial substrate includes a silicon carbide single crystal substrate and a silicon carbide layer. In a direction parallel to a central region, a ratio of a standard deviation of a carrier concentration of the silicon carbide layer to an average value of the carrier concentration of the silicon carbide layer is less than 5%. The average value of the carrier concentration is more than or equal to 1×1014cm−3 and less than or equal to 5×1016cm−3. In the direction parallel to the central region, a ratio of a standard deviation of a thickness of the silicon carbide layer to an average value of the thickness of the silicon carbide layer is less than 5%. The central region has an arithmetic mean roughness (Sa) of less than or equal to 1 nm. The central region has a haze of less than or equal to 50.
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公开(公告)号：US09957641B2
公开(公告)日：2018-05-01
申请号：US15108402
申请日：2015-07-22
发明人： Taro Nishiguchi , Jun Genba , Hironori Itoh , Tomoaki Hatayama , Hideyuki Doi
CPC分类号： C30B29/36 , C23C16/325 , C30B25/10 , C30B25/186 , C30B25/20 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02576 , H01L21/0262
摘要： An epitaxial wafer includes a silicon carbide film having a first main surface. A groove portion is formed in the first main surface. The groove portion extends in one direction along the first main surface. Moreover, a width of the groove portion in the one direction is twice or more as large as a width of the groove portion in a direction perpendicular to the one direction. Moreover, a maximum depth of the groove portion from the first main surface is not more than 10 nm.
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公开(公告)号：US20180096854A1
公开(公告)日：2018-04-05
申请号：US15567443
申请日：2016-04-06
发明人： Keiji Wada , Taro Nishiguchi , Toru Hiyoshi
IPC分类号： H01L21/306 , C23C16/32 , C30B29/36 , C30B25/20 , H01L29/16 , H01L29/34 , H01L21/02 , H01L29/78 , H01L29/40
CPC分类号： H01L21/30625 , C23C16/325 , C23C16/56 , C30B25/02 , C30B25/20 , C30B29/36 , H01L21/02164 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/0262 , H01L21/02634 , H01L21/02664 , H01L29/045 , H01L29/1608 , H01L29/34 , H01L29/408 , H01L29/66068 , H01L29/7395 , H01L29/7802
摘要： A method for manufacturing a silicon carbide epitaxial substrate includes epitaxially growing a first layer on a silicon carbide single crystal substrate, and forming a second layer at an outermost surface of the first layer. The second layer has a chemical composition or density different from that of the first layer. A ratio of a thickness of the second layer to a thickness of the first layer is more than 0% and less than or equal to 10%.
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公开(公告)号：US10770550B2
公开(公告)日：2020-09-08
申请号：US16660878
申请日：2019-10-23
发明人： Keiji Wada , Hironori Itoh , Taro Nishiguchi
IPC分类号： H01L29/16 , C30B25/20 , C30B29/36 , H01L21/02 , H01L29/66 , H01L21/20 , H01L21/205 , H01L29/12 , H01L29/161 , H01L29/78 , H01L29/34
摘要： A silicon carbide epitaxial substrate has a silicon carbide single-crystal substrate and a silicon carbide layer. An average value of carrier concentration in the silicon carbide layer is not less than 1×1015 cm−3 and not more than 5×1016 cm−3. In-plane uniformity of the carrier concentration is not more than 2%. The second main surface has: a groove 80 extending in one direction along the second main surface, a width of the groove in the one direction being twice or more as large as a width thereof in a direction perpendicular to the one direction, and a maximum depth of the groove from the second main surface being not more than 10 nm; and a carrot defect. A value obtained by dividing a number of the carrot defects by a number of the grooves is not more than 1/500.
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公开(公告)号：US10229836B2
公开(公告)日：2019-03-12
申请号：US15567443
申请日：2016-04-06
发明人： Keiji Wada , Taro Nishiguchi , Toru Hiyoshi
IPC分类号： C23C16/32 , C30B29/36 , H01L29/16 , H01L21/306 , C30B25/20 , H01L21/02 , H01L29/34 , H01L29/40 , H01L29/78 , C23C16/56 , H01L29/66 , H01L29/739 , H01L29/04 , C30B25/02
摘要： A method for manufacturing a silicon carbide epitaxial substrate includes epitaxially growing a first layer on a silicon carbide single crystal substrate, and forming a second layer at an outermost surface of the first layer. The second layer has a chemical composition or density different from that of the first layer. A ratio of a thickness of the second layer to a thickness of the first layer is more than 0% and less than or equal to 10%.
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