摘要:
Techniques for polishing a wafer (10) include closed-loop control. The wafer can be held by a carrier head (100) having at least one chamber whose pressure is controlled to apply a downward force on the wafer. Thickness-related measurements of the wafer can be obtained during polishing and a thickness profile for the wafer is calculated based on the thickness-related measurements. The calculated thickness profile is compared to a target thickness profile. The pressure in at least one carrier head chamber is adjusted based on results of the comparison. The carrier head chamber pressures can be adjusted to control the amount of downward force applied to the wafer during polishing and/or to control the size of a loading area on the wafer against which the downward force is applied.
摘要:
A pad conditioning assembly includes a conditioner head with an end effector movable into contact with a polishing pad,a plurality of downwardly-projecting movable conditioning elements disposed at a bottom of the end effector; and a compliant backing member disposed above and adjacent the conditioning elements, wherein forces applied by the compliant backing member are transferred to the movable conditioning elements to move the conditioning elements. In one aspect, a pressurization circuit applies a pressure from a pressure source to the compliant backing member to flex the compliant backing member against the movable conditioning elements.
摘要:
A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane with a lip portion to engage a substrate to form a seal for improved vacuum-chucking.
摘要:
Techniques for polishing a wafer (10) include closed-loop control. The wafer can be held by a carrier head (100) having at least one chamber whose pressure is controlled to apply a downward force on the wafer. Thickness-related measurements of the wafer can be obtained during polishing and a thickness profile for the wafer is calculated based on the thickness-related measurements. The calculated thickness profile is compared to a target thickness profile. The pressure in at least one carrier head chamber is adjusted based on results of the comparison. The carrier head chamber pressures can be adjusted to control the amount of downward force applied to the wafer during polishing and/or to control the size of a loading area on the wafer against which the downward force is applied.
摘要:
Techniques for polishing a wafer (10) include closed-loop control. The wafer can be held by a carrier head (100) having at least one chamber whose pressure is controlled to apply a downward force on the wafer. Thickness-related measurements of the wafer can be obtained during polishing and a thickness profile for the wafer is calculated based on the thickness-related measurements. The calculated thickness profile is compared to a target thickness profile. The pressure in at least one carrier head chamber is adjusted based on results of the comparison. The carrier head chamber pressures can be adjusted to control the amount of downward force applied to the wafer during polishing and/or to control the size of a loading area on the wafer against which the downward force is applied.
摘要:
A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane with a lip portion to engage a substrate to form a seal for improved vacuum-chucking.
摘要:
A carrier head for a chemical mechanical polishing apparatus is described. The carrier head has a base, a rigid body, a membrane and a pressurizing structure. The rigid body is movable relative to the base and includes a downwardly-extending projection. The membrane has a mounting surface for a substrate. The membrane extends below the base to provide a chamber between the base and the membrane. The pressurizing structure applies a downward pressure on the rigid body to cause a lower surface of the rigid body to press on an inner surface of the membrane.
摘要:
An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.
摘要:
A method of polishing a substrate includes holding the substrate on a polishing pad with a polishing head, wherein the polishing pad is supported by a platen, creating relative motion between the substrate and the polishing pad to polish a side of the substrate, generating a light beam and directing the light beam towards the substrate to cause the light beam to impinge on the side of the substrate being polished. Light reflected from the substrate is at a detector to generate an interference signal. A measure of uniformity is computed from the interference signal.
摘要:
A method and apparatus for plating a metal onto a substrate. One embodiment of the invention provides an apparatus for electrochemically plating a substrate. The apparatus comprises a fluid basin configured to retain a plating solution therein, an anode assembly disposed in the fluid basin, a substrate support member configured to support the substrate and contact the substrate electrically, and an encased auxiliary electrode assembly disposed in the fluid basin. The encased auxiliary electrode assembly generally comprises an auxiliary electrode disposed in a protective tube.