Closed-loop control of wafer polishing in a chemical mechanical polishing system
    1.
    发明授权
    Closed-loop control of wafer polishing in a chemical mechanical polishing system 有权
    在化学机械抛光系统中晶圆抛光的闭环控制

    公开(公告)号:US06776692B1

    公开(公告)日:2004-08-17

    申请号:US09609426

    申请日:2000-07-05

    IPC分类号: B24B100

    摘要: Techniques for polishing a wafer (10) include closed-loop control. The wafer can be held by a carrier head (100) having at least one chamber whose pressure is controlled to apply a downward force on the wafer. Thickness-related measurements of the wafer can be obtained during polishing and a thickness profile for the wafer is calculated based on the thickness-related measurements. The calculated thickness profile is compared to a target thickness profile. The pressure in at least one carrier head chamber is adjusted based on results of the comparison. The carrier head chamber pressures can be adjusted to control the amount of downward force applied to the wafer during polishing and/or to control the size of a loading area on the wafer against which the downward force is applied.

    摘要翻译: 抛光晶片(10)的技术包括闭环控制。 晶片可以由具有至少一个室的承载头(100)保持,其压力被控制以在晶片上施加向下的力。 在抛光期间可以获得晶片的厚度相关测量,并且基于厚度相关测量计算晶片的厚度分布。 将计算出的厚度分布与目标厚度分布进行比较。 基于比较的结果调整至少一个载体头部腔室中的压力。 可以调节承载头室压力以控制在抛光期间施加到晶片的向下的力的量和/或控制施加向下的力的晶片上的装载区域的尺寸。

    Chemical mechanical polishing pad conditioning element with discrete points and compliant membrane
    2.
    发明授权
    Chemical mechanical polishing pad conditioning element with discrete points and compliant membrane 失效
    化学机械抛光垫调节元件,具有离散点和柔顺膜

    公开(公告)号:US06572446B1

    公开(公告)日:2003-06-03

    申请号:US09664603

    申请日:2000-09-18

    IPC分类号: B24B5100

    摘要: A pad conditioning assembly includes a conditioner head with an end effector movable into contact with a polishing pad,a plurality of downwardly-projecting movable conditioning elements disposed at a bottom of the end effector; and a compliant backing member disposed above and adjacent the conditioning elements, wherein forces applied by the compliant backing member are transferred to the movable conditioning elements to move the conditioning elements. In one aspect, a pressurization circuit applies a pressure from a pressure source to the compliant backing member to flex the compliant backing member against the movable conditioning elements.

    摘要翻译: 垫调节组件包括具有可与抛光垫接触的末端执行器的调节头,设置在末端执行器底部的多个向下突出的可移动调节元件; 以及设置在调节元件上方并与其相邻的柔顺背衬构件,其中由柔性背衬构件施加的力被传递到可移动调节元件以移动调节元件。 在一个方面,加压电路将来自压力源的压力施加到柔性背衬构件上,以使柔顺背衬构件抵靠可动调节元件弯曲。

    Closed-loop control of wafer polishing in a chemical mechanical polishing system
    4.
    发明授权
    Closed-loop control of wafer polishing in a chemical mechanical polishing system 有权
    在化学机械抛光系统中晶圆抛光的闭环控制

    公开(公告)号:US07018275B2

    公开(公告)日:2006-03-28

    申请号:US10886000

    申请日:2004-07-06

    IPC分类号: B24B11/00

    摘要: Techniques for polishing a wafer (10) include closed-loop control. The wafer can be held by a carrier head (100) having at least one chamber whose pressure is controlled to apply a downward force on the wafer. Thickness-related measurements of the wafer can be obtained during polishing and a thickness profile for the wafer is calculated based on the thickness-related measurements. The calculated thickness profile is compared to a target thickness profile. The pressure in at least one carrier head chamber is adjusted based on results of the comparison. The carrier head chamber pressures can be adjusted to control the amount of downward force applied to the wafer during polishing and/or to control the size of a loading area on the wafer against which the downward force is applied.

    摘要翻译: 抛光晶片(10)的技术包括闭环控制。 晶片可以由具有至少一个室的承载头(100)保持,其压力被控制以在晶片上施加向下的力。 在抛光期间可以获得晶片的厚度相关测量,并且基于厚度相关测量计算晶片的厚度分布。 将计算出的厚度分布与目标厚度分布进行比较。 基于比较的结果调整至少一个载体头部腔室中的压力。 可以调节承载头室压力以控制在抛光期间施加到晶片的向下的力的量和/或控制施加向下的力的晶片上的装载区域的尺寸。

    Closed-loop control of wafer polishing in a chemical mechanical polishing system
    5.
    发明申请
    Closed-loop control of wafer polishing in a chemical mechanical polishing system 有权
    在化学机械抛光系统中晶圆抛光的闭环控制

    公开(公告)号:US20050020185A1

    公开(公告)日:2005-01-27

    申请号:US10886000

    申请日:2004-07-06

    摘要: Techniques for polishing a wafer (10) include closed-loop control. The wafer can be held by a carrier head (100) having at least one chamber whose pressure is controlled to apply a downward force on the wafer. Thickness-related measurements of the wafer can be obtained during polishing and a thickness profile for the wafer is calculated based on the thickness-related measurements. The calculated thickness profile is compared to a target thickness profile. The pressure in at least one carrier head chamber is adjusted based on results of the comparison. The carrier head chamber pressures can be adjusted to control the amount of downward force applied to the wafer during polishing and/or to control the size of a loading area on the wafer against which the downward force is applied.

    摘要翻译: 抛光晶片(10)的技术包括闭环控制。 晶片可以由具有至少一个室的承载头(100)保持,其压力被控制以在晶片上施加向下的力。 在抛光期间可以获得晶片的厚度相关测量,并且基于厚度相关测量计算晶片的厚度分布。 将计算出的厚度分布与目标厚度分布进行比较。 基于比较的结果调整至少一个载体头部腔室中的压力。 可以调节承载头室压力以控制在抛光期间施加到晶片的向下的力的量和/或控制施加向下的力的晶片上的装载区域的尺寸。

    Carrier head with a flexible membrane
    7.
    发明申请
    Carrier head with a flexible membrane 失效
    带头的柔性膜

    公开(公告)号:US20050037698A1

    公开(公告)日:2005-02-17

    申请号:US10946186

    申请日:2004-09-20

    CPC分类号: B24B37/30 B24B37/32

    摘要: A carrier head for a chemical mechanical polishing apparatus is described. The carrier head has a base, a rigid body, a membrane and a pressurizing structure. The rigid body is movable relative to the base and includes a downwardly-extending projection. The membrane has a mounting surface for a substrate. The membrane extends below the base to provide a chamber between the base and the membrane. The pressurizing structure applies a downward pressure on the rigid body to cause a lower surface of the rigid body to press on an inner surface of the membrane.

    摘要翻译: 描述了用于化学机械抛光装置的载体头。 承载头具有底座,刚体,膜和加压结构。 刚体相对于基座可移动并包括向下延伸的突出部。 膜具有用于基底的安装表面。 膜延伸到底部下方以在基底和膜之间提供腔室。 加压结构向刚体施加向下的压力,以使刚体的下表面压在膜的内表面上。

    Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
    8.
    发明授权
    Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations 有权
    用于化学机械抛光操作的原位终点检测的装置和方法

    公开(公告)号:US07775852B2

    公开(公告)日:2010-08-17

    申请号:US11099789

    申请日:2005-04-05

    IPC分类号: B24B49/12

    摘要: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

    摘要翻译: 使用用于在CMP处理期间原地确定终止该过程的端点的装置的晶片的化学机械抛光(CMP)的装置和方法。 该装置包括能够产生朝向晶片的激光束并检测从晶片反射的光的激光干涉仪,以及邻近通过压板形成的孔布置的窗口。 该窗口在晶片覆盖窗口的至少部分时间内为激光束提供通路。

    Substrate polishing metrology using interference signals
    9.
    发明授权
    Substrate polishing metrology using interference signals 失效
    使用干涉信号的基板抛光计量

    公开(公告)号:US07731566B2

    公开(公告)日:2010-06-08

    申请号:US11838808

    申请日:2007-08-14

    IPC分类号: B24B49/00

    摘要: A method of polishing a substrate includes holding the substrate on a polishing pad with a polishing head, wherein the polishing pad is supported by a platen, creating relative motion between the substrate and the polishing pad to polish a side of the substrate, generating a light beam and directing the light beam towards the substrate to cause the light beam to impinge on the side of the substrate being polished. Light reflected from the substrate is at a detector to generate an interference signal. A measure of uniformity is computed from the interference signal.

    摘要翻译: 抛光衬底的方法包括:将抛光垫保持在具有抛光头的抛光垫上,其中抛光垫由压板支撑,在衬底和抛光垫之间产生相对运动以抛光衬底的侧面,产生光 光束并将光束引向基板,以使光束撞击正在抛光的基板的侧面。 从基板反射的光在检测器处产生干涉信号。 从干扰信号计算均匀度的度量。