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    Method and non-transitory computer-readable storage medium and apparatus for reading data with optimization read voltage table
    2.
    发明授权
    Method and non-transitory computer-readable storage medium and apparatus for reading data with optimization read voltage table 有权

    公开(公告)号：US12175092B2

    公开(公告)日：2024-12-24

    申请号：US18080842

    申请日：2022-12-14

    Applicant: Silicon Motion, Inc.

    Inventor： Chun-Yi Chen ,  Hsiao-Te Chang

    IPC: G06F3/06

    Abstract: The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for reading data with an optimization read voltage (RV) table. The method includes: determining one set of RVs for a designated memory-cell type according to a current environmental parameter of a NAND-flash module and content of the optimization RV table; and reading data on a page corresponding to the designated memory-cell type from the NAND-flash module with the set of RVs. The optimization RV table includes multiple records and each record includes one set of RV parameters and an environmental parameter associated with the set of RV parameters.

    Method and non-transitory computer-readable storage medium and apparatus for dynamically updating optimization read voltage table
    4.
    发明授权
    Method and non-transitory computer-readable storage medium and apparatus for dynamically updating optimization read voltage table 有权

    公开(公告)号：US12204763B2

    公开(公告)日：2025-01-21

    申请号：US18080852

    申请日：2022-12-14

    Applicant: Silicon Motion, Inc.

    Inventor： Chun-Yi Chen ,  Hsiao-Te Chang

    IPC: G06F3/00 ,  G06F3/06

    Abstract: The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for dynamically updating an optimization read voltage (RV) table. The method includes: obtaining a data-read transaction and replying with the data-read transaction to a host side after listening to a first request for read-performance data, which is issued by the host side, thereby enabling the data-performance transaction to be used in an update of the optimization RV table for a designated memory-cell type; and programming multiple records of an updated optimization RV table for the designated memory-cell type into a designated location of the NAND-flash module after listening to a second request for updating the optimization RV table for the designated memory-cell type, which is issued by the host side. The data-read transaction includes a current environmental parameter of a NAND-flash module, the designated memory-cell type and a bit error rate (BER). Each record includes one set of RV parameters and an environmental parameter associated with the set of RV parameters.

    Method for accessing flash memory having pages used for data backup and associated memory device
    5.
    发明授权
    Method for accessing flash memory having pages used for data backup and associated memory device 有权
    用于访问具有用于数据备份的页面和相关联的存储器设备的闪存的方法

    公开(公告)号：US09384125B2

    公开(公告)日：2016-07-05

    申请号：US13920074

    申请日：2013-06-17

    Applicant: Silicon Motion Inc.

    Inventor： Hsiao-Te Chang ,  Chun-Yi Chen

    IPC: G06F12/02

    CPC classification number: G06F12/0246 ,  G06F2212/1032

    Abstract: The present invention provides a method for accessing a flash memory, where a block of the flash memory includes pages whose quantity is (2N+M), N and M are positive integers. The method includes: writing a data stream into 1st-(2N)th pages, and backing up data of a portion of the 1st-(2N)th pages into (2N+1)th-(2N+M)th pages.

    Abstract translation: 本发明提供了一种用于访问闪速存储器的方法，其中闪存的块包括数量为（2N + M），N和M为正整数的页。 该方法包括：将数据流写入第（2N）页，并将第一（2N）页的一部分的数据备份到（2N + 1）th（（2N + M））页中。

    Data storage device and error correction method thereof
    6.
    发明授权
    Data storage device and error correction method thereof 有权
    数据存储装置及其纠错方法

    公开(公告)号：US09274893B2

    公开(公告)日：2016-03-01

    申请号：US14271928

    申请日：2014-05-07

    Applicant: Silicon Motion, Inc.

    Inventor： Chun-Yi Chen

    IPC: G06F11/14

    CPC classification number: G06F11/1068 ,  G06F11/1072 ,  G06F11/1402 ,  G06F11/141 ,  G11C11/5642 ,  G11C29/52 ,  G11C2211/5641

    Abstract: The present invention provides a data storage device including a flash memory and a controller. The flash memory is capable of operating in a SLC mode and a non-SLC mode. The controller is configured to perform a first read operation to read a page corresponding to a first word line of the flash memory in the SLC mode according to a read command of a host, and perform an adjustable read operation when data read by the first read operation cannot be recovered by coding, wherein the controller is further configured to enable the flash memory to operate in the non-SLC mode in the adjustable read operation, and write logic 1 into a most-significant-bit page corresponding to the first word line in the non-SLC mode to adjust voltage distribution of the first page.

    Abstract translation: 本发明提供一种包括闪速存储器和控制器的数据存储装置。 闪存能够在SLC模式和非SLC模式下工作。 控制器被配置为执行第一读取操作，以根据主机的读取命令来读取与SLC模式中的闪速存储器的第一字线相对应的页面，并且当通过第一读取读取数据时执行可调节读取操作 无法通过编码恢复操作，其中控制器还被配置为使得闪存能够在可调读操作中以非SLC模式工作，并将写入逻辑1写入对应于第一字线的最高有效位页 在非SLC模式下调整第一页的电压分布。

    METHOD FOR ACCESSING FLASH MEMORY HAVING PAGES USED FOR DATA BACKUP AND ASSOCIATED MEMORY DEVICE
    7.
    发明申请
    METHOD FOR ACCESSING FLASH MEMORY HAVING PAGES USED FOR DATA BACKUP AND ASSOCIATED MEMORY DEVICE 有权
    用于访问用于数据备份和相关存储器件的页面的闪速存储器的方法

    公开(公告)号：US20130339584A1

    公开(公告)日：2013-12-19

    申请号：US13920074

    申请日：2013-06-17

    Applicant: Silicon Motion Inc.

    Inventor： Hsiao-Te Chang ,  Chun-Yi Chen

    IPC: G06F12/02

    CPC classification number: G06F12/0246 ,  G06F2212/1032

    Abstract: The present invention provides a method for accessing a flash memory, where a block of the flash memory includes pages whose quantity is (2N+M), N and M are positive integers. The method includes: writing a data stream into 1st-(2N)th pages, and backing up data of a portion of the 1st-(2N)th pages into (2N+1)th-(2N+M)th pages.

    Abstract translation: 本发明提供了一种用于访问闪速存储器的方法，其中闪存的块包括数量为（2N + M），N和M为正整数的页。 该方法包括：将数据流写入第（2N）页，并将第一（2N）页的一部分的数据备份到（2N + 1）th（（2N + M））页中。

    FLASH MEMORY APPARATUS AND DATA ACCESS METHOD FOR FLASH MEMORY WITH REDUCED DATA ACCESS TIME
    9.
    发明申请
    FLASH MEMORY APPARATUS AND DATA ACCESS METHOD FOR FLASH MEMORY WITH REDUCED DATA ACCESS TIME 审中-公开
    具有减少数据访问时间的闪存存储器的闪存存储器和数据访问方法

    公开(公告)号：US20130326125A1

    公开(公告)日：2013-12-05

    申请号：US13909106

    申请日：2013-06-04

    Applicant: Silicon Motion Inc.

    Inventor： Hsiao-Te Chang ,  Chun-Yi Chen

    IPC: G06F12/02

    CPC classification number: G06F12/0246 ,  G06F2212/7203 ,  G11C2211/5641

    Abstract: A data access method for flash memory includes: receiving a first data from a host terminal by utilizing a flash memory controller; transmitting and writing the first data into a single-level cell of the flash memory form the flash memory controller; and when the flash memory controller receives a second data from the host terminal, utilizing the flash memory controller to execute a copy back program to merge at least a portion of the first data stored in the single-level cell into a multi-level cell.

    Abstract translation: 一种用于闪速存储器的数据存取方法包括：利用闪存控制器从主机终端接收第一数据; 将闪存控制器的第一数据发送和写入闪存的单级单元; 并且当所述闪速存储器控制器从所述主机终端接收到第二数据时，利用所述闪速存储器控制器执行复制程序以将存储在所述单级单元中的所述第一数据的至少一部分合并为多级单元。

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