公开(公告)号：US20170327969A1

公开(公告)日：2017-11-16

申请号：US15607319

申请日：2017-05-26

申请人： Kenji Iso ,  Hisashi Yamada ,  Makoto Saito ,  Asako Hirai ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Kenji Iso ,  Hisashi Yamada ,  Makoto Saito ,  Asako Hirai ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/40 ,  H01L33/32 ,  H01L33/16 ,  H01L29/20 ,  H01L29/04 ,  B82Y20/00 ,  H01L21/02 ,  H01S5/32 ,  H01S5/343

CPC分类号： C30B25/18 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the direction is 0.75° or greater miscut and less than 27° miscut towards the direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.

公开(公告)号：US09133564B2

公开(公告)日：2015-09-15

申请号：US13283862

申请日：2011-10-28

申请人： Siddha Pimputkar ,  James S. Speck ,  Shuji Nakamura ,  Shin-Ichiro Kawabata

发明人： Siddha Pimputkar ,  James S. Speck ,  Shuji Nakamura ,  Shin-Ichiro Kawabata

IPC分类号： C30B7/10 ,  C30B29/40

CPC分类号： C30B7/105 ,  C30B29/403 ,  Y10T428/24479

摘要： An ammonothermal growth of group-III nitride crystals on starting seed crystals with at least two surfaces making an acute, right or obtuse angle, i.e., greater than 0 degrees and less than 180 degrees, with respect to each other, such that the exposed surfaces together form a concave surface.

摘要翻译： III族氮化物晶体在具有至少两个表面的起始晶种上相对于彼此形成锐角，右或钝角，即大于0度且小于180度的氨热生长，使得暴露表面 一起形成凹面。

公开(公告)号：US09040327B2

公开(公告)日：2015-05-26

申请号：US13495231

申请日：2012-06-13

申请人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang-Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang-Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L33/32 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/02 ,  H01L33/06 ,  H01S5/32 ,  H01S5/343

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/16 ,  H01S5/3211 ,  H01S5/34333

摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。

公开(公告)号：US08795440B2

公开(公告)日：2014-08-05

申请号：US13313335

申请日：2011-12-07

申请人： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/02

CPC分类号： H01L21/02658 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262

摘要： A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.

摘要翻译： 生长非极性m面III族氮化物膜的方法，例如GaN，AlN，AlGaN或InGaN，其中非极性m面III族氮化物膜在合适的衬底上生长，例如m-SiC ，m-GaN，LiGaO2或LiAlO2基板，使用金属有机化学气相沉积（MOCVD）。 该方法包括进行溶剂清洁和浸渍基底以从表面除去氧化物，退火基底，在退火的基底上生长诸如氮化铝（AlN）的成核层，以及生长非极性m- 使用MOCVD在成核层上的III型氮化物膜。

公开(公告)号：US08779308B2

公开(公告)日：2014-07-15

申请号：US13367752

申请日：2012-02-07

申请人： Akihiko Takemae ,  Norio Endo ,  Shuji Nakamura ,  Tamotsu Koike ,  Takeshi Nishino

发明人： Akihiko Takemae ,  Norio Endo ,  Shuji Nakamura ,  Tamotsu Koike ,  Takeshi Nishino

IPC分类号： H01H9/26 ,  H01H3/12 ,  H01H13/36 ,  H01H13/14

CPC分类号： H01H3/125 ,  H01H13/14 ,  H01H13/36 ,  H01H13/702 ,  H01H2203/038 ,  H01H2227/036

摘要： A key switch device including a key top; a pair of link members connected to the key top and interlocked with each other to guide a vertical motion of the key top; a switch mechanism including a membrane sheet switch capable of opening and closing a contact section of an electrical circuit in accordance with the vertical motion of the key top; a flexible thin film sheet attached to the membrane sheet switch; and a housing attached to the thin film sheet, the housing adapted to connect the link members to the thin film sheet.

摘要翻译： 一种钥匙开关装置，包括键顶; 一对连接构件，连接到键顶并互锁，以引导键顶的垂直运动; 开关机构，其包括根据键顶的垂直运动能够打开和闭合电路的接触部分的膜片开关; 安装在薄片开关上的柔性薄膜片; 以及附接到所述薄膜片的壳体，所述壳体适于将所述连接构件连接到所述薄膜片。

公开(公告)号：US08729671B2

公开(公告)日：2014-05-20

申请号：US13327521

申请日：2011-12-15

申请人： Asako Hirai ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Asako Hirai ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L29/20

CPC分类号： C30B33/00 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003

摘要： A method for fabricating a high quality freestanding nonpolar and semipolar nitride substrate with increased surface area, comprising stacking multiple films by growing the films one on top of each other with different and non-orthogonal growth directions.

摘要翻译： 一种用于制造具有增加的表面积的高质量独立非极性和半极性氮化物衬底的方法，包括通过用不同的和非正交的生长方向将膜形成在一个层叠上来堆叠多个膜。

公开(公告)号：US08709371B2

公开(公告)日：2014-04-29

申请号：US11921396

申请日：2005-07-08

申请人： Kenji Fujito ,  Tadao Hashimoto ,  Shuji Nakamura

发明人： Kenji Fujito ,  Tadao Hashimoto ,  Shuji Nakamura

IPC分类号： C01B21/06 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B7/105 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1096

摘要： A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

摘要翻译： 生长高品质，III族氮化物，大块单晶的方法。 III族氮化物本体晶体在超临界氨的高压釜中使用源材料或营养物生长，所述源材料或营养物是具有至少10微米或更小的晶粒尺寸的III族氮化物多晶体或III族金属，以及晶种， 是III族氮化物单晶。 III族氮化物多晶体可以在600℃以上的还原气体中退火之后从先前的氨热处理中回收。高压釜可以包括填充有氨的内部室，其中氨从内部室释放到高压釜 当氨在高压釜加热后达到超临界状态时，超临界氨的对流转移源材料并将转移的原材料沉积到晶种上，而防止源材料的未溶解颗粒被转移并沉积在 晶种。

公开(公告)号：US08692105B2

公开(公告)日：2014-04-08

申请号：US13089138

申请日：2011-04-18

申请人： Hiroaki Ohta ,  Alexander Sztein ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Hiroaki Ohta ,  Alexander Sztein ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L35/12 ,  H01L35/30

CPC分类号： H01L35/22

摘要： A method to suppress thermal conductivities of nitride films by using stacking faults and/or nano-scale In-composition fluctuation(s). Therefore, the present invention reduces thermal conductivity of nitride while keeping electrical conductivity high. In addition, In composition fluctuations can enhance the Seebeck coefficient through thermionic emission. The present invention further discloses a nitride based (e.g. GaN) thermoelectric lateral device with a short length.

摘要翻译： 通过使用堆垛层错和/或纳米级组成波动来抑制氮化物膜的热导率的方法。 因此，本发明降低氮化物的导热性，同时保持导电性高。 此外，组成波动可以通过热电子发射增强塞贝克系数。 本发明还公开了一种具有短长度的氮化物基（例如GaN）热电横向装置。

公开(公告)号：US08686466B2

公开(公告)日：2014-04-01

申请号：US12953029

申请日：2010-11-23

申请人： Robert M. Farrell, Jr. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh K. Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Robert M. Farrell, Jr. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh K. Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01L33/02

CPC分类号： H01L33/16 ,  B82Y20/00 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0004 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/02 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

摘要： A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.

摘要翻译： 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

公开(公告)号：US08624281B2

公开(公告)日：2014-01-07

申请号：US12974621

申请日：2010-12-21

申请人： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  F21K9/64 ,  H01L33/32 ,  H01L33/46 ,  H01L33/483 ,  H01L33/50 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.

摘要翻译： 一种用于增加白光发光二极管（WLED）的发光效率的方法，包括在LED管芯和荧光体之间以及在所述荧光体和外部介质之间引入光学功能界面，其中所述荧光体和 LED管芯提供对由荧光体远离外部介质发出的光的反射率以及由LED管芯发射的光的透射率。 因此，WLED可以包括围绕LED管芯，荧光体层以及放置在荧光体层和第一材料之间的用于直接LED发射和反射用于荧光体发射的透明的至少一个附加层或材料的第一材料 其围绕LED管芯。