发明授权
US08729671B2 Method for increasing the area of non-polar and semi-polar nitride substrates
有权
增加非极性和半极性氮化物衬底面积的方法
- 专利标题： Method for increasing the area of non-polar and semi-polar nitride substrates
- 专利标题（中）： 增加非极性和半极性氮化物衬底面积的方法
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申请号： US13327521申请日： 2011-12-15
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公开(公告)号： US08729671B2公开(公告)日： 2014-05-20
- 发明人: Asako Hirai , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人： Asako Hirai , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 代理机构： Gates & Cooper LLP
- 主分类号： H01L29/20
- IPC分类号： H01L29/20
摘要：
A method for fabricating a high quality freestanding nonpolar and semipolar nitride substrate with increased surface area, comprising stacking multiple films by growing the films one on top of each other with different and non-orthogonal growth directions.
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