公开(公告)号：US08405128B2

公开(公告)日：2013-03-26

申请号：US12716670

申请日：2010-03-03

Applicant: Hitoshi Sato ,  John F. Kaeding ,  Michael Iza ,  Benjamin A. Haskell ,  Troy J. Baker ,  Steven P. DenBaars ,  Shuji Nakamura

Inventor： Hitoshi Sato ,  John F. Kaeding ,  Michael Iza ,  Benjamin A. Haskell ,  Troy J. Baker ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L31/06

CPC classification number: H01L29/045 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02365 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

Abstract: A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al, In, Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

Abstract translation: 通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，在加热衬底上沉积In x Ga 1-x N成核层，在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层，并在氮气过压下冷却该衬底。

公开(公告)号：US08148244B2

公开(公告)日：2012-04-03

申请号：US11486224

申请日：2006-07-13

Applicant: Troy J. Baker ,  Benjamin A. Haskell ,  James S. Speck ,  Shuji Nakamura

Inventor： Troy J. Baker ,  Benjamin A. Haskell ,  James S. Speck ,  Shuji Nakamura

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/02609 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265

Abstract: A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas of the substrate at the exclusion of other areas of the substrate, wherein the selective growth process includes lateral growth of nitride material by a lateral epitaxial overgrowth (LEO), sidewall lateral epitaxial overgrowth (SLEO), cantilever epitaxy or nanomasking.

Abstract translation: 一种用于半极性氮化物薄膜缺陷还原的横向生长方法。 工艺步骤包括选择半极性氮化物平面和组成，选择用于生长半极性氮化物平面和组成的合适衬底，以及施加选择性生长工艺，其中半极性氮化物在其它区域的排除下在衬底的某些区域成核 其中选择性生长工艺包括通过横向外延过度生长（LEO），侧壁横向外延过度生长（SLEO），悬臂外延或纳米掩模的氮化物材料的侧向生长。

公开(公告)号：US20120074524A1

公开(公告)日：2012-03-29

申请号：US13309365

申请日：2011-12-01

Applicant: Troy J. Baker ,  Benjamin A. Haskell ,  James S. Speck ,  Shuji Nakamura

Inventor： Troy J. Baker ,  Benjamin A. Haskell ,  James S. Speck ,  Shuji Nakamura

IPC: H01L29/20 ,  H01L21/20

CPC classification number: H01L21/02609 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265

Abstract: A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas of the substrate at the exclusion of other areas of the substrate, wherein the selective growth process includes lateral growth of nitride material by a lateral epitaxial overgrowth (LEO), sidewall lateral epitaxial overgrowth (SLEO), cantilever epitaxy or nanomasking.

Abstract translation: 一种用于半极性氮化物薄膜缺陷还原的横向生长方法。 工艺步骤包括选择半极性氮化物平面和组成，选择用于生长半极性氮化物平面和组成的合适衬底，以及施加选择性生长工艺，其中半极性氮化物在其它区域的排除下在衬底的某些区域成核 其中选择性生长工艺包括通过横向外延过度生长（LEO），侧壁横向外延过度生长（SLEO），悬臂外延或纳米掩模的氮化物材料的横向生长。

公开(公告)号：US20110062449A1

公开(公告)日：2011-03-17

申请号：US12953029

申请日：2010-11-23

Applicant: Robert M. Farrell, JR. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh Kumar Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

Inventor： Robert M. Farrell, JR. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh Kumar Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/30 ,  H01L21/20

CPC classification number: H01L33/16 ,  B82Y20/00 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0004 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/02 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract translation: 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

公开(公告)号：US07846757B2

公开(公告)日：2010-12-07

申请号：US11444946

申请日：2006-06-01

Applicant: Robert M. Farrell, Jr. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh Kumar Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

Inventor： Robert M. Farrell, Jr. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh Kumar Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L33/16 ,  B82Y20/00 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0004 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/02 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract translation: 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

公开(公告)号：US07795146B2

公开(公告)日：2010-09-14

申请号：US11403288

申请日：2006-04-13

Applicant: James S. Speck ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Troy J. Baker

Inventor： James S. Speck ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Troy J. Baker

IPC: H01L21/461

CPC classification number: H01L21/76254 ,  H01L21/2654 ,  H01L21/26546 ,  H01L21/30612 ,  H01L33/0079 ,  H01L33/32

Abstract: An etching technique for the fabrication of thin (Al, In, Ga)N layers. A suitable template or substrate is selected and implanted with foreign ions over a desired area to create ion implanted material. A regrowth of a device structure is then performed on the implanted template or substrate. The top growth surface of the template is bonded to a carrier wafer to created a bonded template/carrier wafer structure. The substrate is removed, as is any residual material, to expose the ion implanted material. The ion implanted material on the bonded template/carrier wafer structure is then exposed to a suitable etchant for a sufficient time to remove the ion implanted material.

Abstract translation: 用于制造薄（Al，In，Ga）N层的蚀刻技术。 选择合适的模板或衬底并在期望的区域上注入外来离子以产生离子注入材料。 然后在植入的模板或衬底上执行器件结构的再生长。 模板的顶部生长表面被结合到载体晶片以产生结合的模板/载体晶片结构。 像任何残留的材料一样去除衬底以暴露离子注入的材料。 然后将接合的模板/载体晶片结构上的离子注入材料暴露于合适的蚀刻剂足够的时间以除去离子注入的材料。

公开(公告)号：US20090184342A1

公开(公告)日：2009-07-23

申请号：US11517797

申请日：2006-09-08

Applicant: Michael Iza ,  Troy J. Baker ,  Benjamin A. Haskell ,  Steven P. DenBaars ,  Shuji Nakamura

Inventor： Michael Iza ,  Troy J. Baker ,  Benjamin A. Haskell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/205 ,  H01L21/205 ,  H01L29/20

CPC classification number: H01L21/0262 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/02609 ,  H01L21/02647

Abstract: A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.

Abstract translation: 一种通过金属有机化学气相沉积（MOCVD）在衬底上生长半极性氮化物半导体薄膜的方法，其中在半极性氮化物半导体薄膜生长之前，在衬底上生长氮化物成核或缓冲层。

公开(公告)号：US08686466B2

公开(公告)日：2014-04-01

申请号：US12953029

申请日：2010-11-23

Applicant: Robert M. Farrell, Jr. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh K. Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

Inventor： Robert M. Farrell, Jr. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh K. Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/02

CPC classification number: H01L33/16 ,  B82Y20/00 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0004 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/02 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract translation: 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

公开(公告)号：US08524012B2

公开(公告)日：2013-09-03

申请号：US13357432

申请日：2012-01-24

Applicant: Troy J. Baker ,  Benjamin A. Haskell ,  Paul T. Fini ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamua

Inventor： Troy J. Baker ,  Benjamin A. Haskell ,  Paul T. Fini ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamua

IPC: H01L21/205

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  Y10S438/938

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {1011} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {1013} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {1122} gallium nitride (GaN) grown on a {1100} sapphire substrate, and (4) {1013} gallium nitride (GaN) grown on a {1100} sapphire substrate.

Abstract translation: 一种在杂交尖晶石衬底上生长平面，半极性氮化物膜的方法，其中大面积的平面半极性氮化物膜平行于衬底的表面。 平面膜和衬底是：（1）在{100}尖晶石衬底上在特定方向上生长的{1011}氮化镓（GaN），（2）在{110}尖晶石衬底上生长的{1013}氮化镓（GaN） ，（3）在{1100}蓝宝石衬底上生长的{1122}氮化镓（GaN），以及（4）在{1100}蓝宝石衬底上生长的{1013}氮化镓（GaN）。

公开(公告)号：US20130168833A1

公开(公告)日：2013-07-04

申请号：US13776446

申请日：2013-02-25

Applicant: Hitoshi Sato ,  John F. Kaeding ,  Michael Iza ,  Benjamin A. Haskell ,  Troy J. Baker ,  Steven P. DenBaars ,  Shuji Nakamura

Inventor： Hitoshi Sato ,  John F. Kaeding ,  Michael Iza ,  Benjamin A. Haskell ,  Troy J. Baker ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/04 ,  H01L21/02

CPC classification number: H01L29/045 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02365 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

Abstract: A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

Abstract translation: 通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，在加热衬底上沉积In x Ga 1-x N成核层，在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层，并在氮气过压下冷却该衬底。