Invention Application
US20090184342A1 METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
有权
用于增强半极性（AL，IN，GA，B）N生长的方法通过金属化学气相沉积
- Patent Title: METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
- Patent Title (中): 用于增强半极性（AL，IN，GA，B）N生长的方法通过金属化学气相沉积
-
Application No.: US11517797Application Date: 2006-09-08
-
Publication No.: US20090184342A1Publication Date: 2009-07-23
- Inventor: Michael Iza , Troy J. Baker , Benjamin A. Haskell , Steven P. DenBaars , Shuji Nakamura
- Applicant: Michael Iza , Troy J. Baker , Benjamin A. Haskell , Steven P. DenBaars , Shuji Nakamura
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L21/205 ; H01L29/20
Abstract:
A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.
Public/Granted literature
- US07575947B2 Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition Public/Granted day:2009-08-18
Information query
IPC分类:
