公开(公告)号：US5461238A

公开(公告)日：1995-10-24

申请号：US325474

申请日：1994-10-19

申请人： Shoji Hara ,  Satoshi Arakawa

发明人： Shoji Hara ,  Satoshi Arakawa

IPC分类号： G03B42/02 ,  G01N23/04 ,  G01T1/29

CPC分类号： G01T1/2014 ,  G01N23/04

摘要： In a radiation image read-out apparatus, a stimulable phosphor sheet, on which a radiation image has been stored, is exposed to stimulating rays, which cause the stimulable phosphor sheet to emit light in proportion to the amount of energy stored thereon during its exposure to radiation. The emitted light is detected and photoelectrically converted by a photodetector, and an image signal representing the radiation image is thereby generated by the photodetector. Information corresponding to the amount of energy stored on the stimulable phosphor sheet during its exposure to radiation is inputted from a stored energy amount input device. A light amount adjuster is located in an optical path of the emitted light impinging upon the photodetector in order to adjust the amount of the emitted light impinging upon the photodetector in accordance with the amount of energy stored on the stimulable phosphor sheet, which energy amount is represented by the information having been inputted with the stored energy amount input device.

摘要翻译： 在放射线图像读取装置中，在其上存储有放射线图像的可刺激的荧光体片材暴露于刺激光线，其使得可刺激的荧光体片材在其曝光期间与其上存储的能量的量成比例地发光 到辐射。 由光检测器检测并光电转换发射的光，由光电检测器产生表示放射线图像的图像信号。 从存储的能量输入装置输入与曝光于辐射时的能激发的荧光体片上的能量的量对应的信息。 光量调节器位于照射在光电检测器上的发射光的光路中，以便根据存储在可刺激的荧光体片上的能量的量来调节照射到光电检测器上的发射光的量，该能量为 由输入了存储能量输入装置的信息表示。

公开(公告)号：US5051587A

公开(公告)日：1991-09-24

申请号：US492034

申请日：1990-03-12

申请人： Shoji Hara ,  Satoshi Arakawa ,  Masamitsu Ishida

发明人： Shoji Hara ,  Satoshi Arakawa ,  Masamitsu Ishida

IPC分类号： G01T1/29 ,  G03B42/02

CPC分类号： G03B42/02 ,  G01T1/2014

摘要： A radiation image read-out method comprises the steps of exposing a stimulable phosphor sheet, on which a radiation image having a background region has been stored, to stimulating rays which cause the stimulable phosphor sheet to emit light in proportion to the amount of energy stored thereon during its exposure to radiation, and detecting the emitted light in order to obtain an image signal representing the radiation image. The shape and location of the background region are determined in advance, and only the area outside of the background region on the stimulable phosphor sheet is exposed to stimulating rays. Light emitted from the area outside of the background region is detected and converted into an image signal. Alternatively, after the shape and location of the background region are determined, the background region is erased. Thereafter, the stimulable phosphor sheet is exposed to stimulating rays, and light emitted by the stimulable phosphor sheet is detected and converted into an image signal.

摘要翻译： 放射线图像读出方法包括以下步骤：将具有背景区域的放射线图像存储在其上的可刺激的荧光体片材曝光，以刺激使可激发的荧光体片材与所存储的能量的量成比例地发光的射线 在其暴露于辐射的同时，检测发射的光，以获得表示辐射图像的图像信号。 预先确定背景区域的形状和位置，并且只有可刺激的荧光体片材上的背景区域外部的区域暴露于刺激光线。 从背景区域以外的区域发射的光被检测并转换为图像信号。 或者，在确定背景区域的形状和位置之后，背景区域被擦除。 此后，可刺激的荧光体片材暴露于刺激光线，并且检测由可刺激的磷光体片发射的光并将其转换为图像信号。

公开(公告)号：US20110110840A1

公开(公告)日：2011-05-12

申请号：US13054373

申请日：2009-06-26

申请人： Michimasa Miyanaga ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Issei Satoh ,  Hideaki Nakahata ,  Satoshi Arakawa ,  Yoshiyuki Yamamoto ,  Takashi Sakurada

发明人： Michimasa Miyanaga ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Issei Satoh ,  Hideaki Nakahata ,  Satoshi Arakawa ,  Yoshiyuki Yamamoto ,  Takashi Sakurada

IPC分类号： C30B29/40 ,  C30B23/02 ,  C30B23/06 ,  C01B21/06

CPC分类号： C30B29/403 ,  C30B23/025 ,  C30B25/18

摘要： A method for producing a group III-nitride crystal having a large thickness and high quality and a group III-nitride crystal are provided. A method for producing a group III-nitride crystal 13 includes the following steps: A underlying substrate 11 having a major surface 11a tilted toward the direction with respect to the (0001) plane is prepared. The group III-nitride crystal 13 is grown by vapor-phase epitaxy on the major surface 11a of the underlying substrate 11. The major surface 11a of the underlying substrate 11 is preferably a plane tilted at an angle of −5° to 5° from the {01-10} plane.

摘要翻译： 提供了具有大厚度和高质量的III族氮化物晶体和III族氮化物晶体的制造方法。 制备III族氮化物晶体13的方法包括以下步骤：制备具有相对于（0001）面朝向<1-100>方向倾斜的主表面11a的下面的基底11。 III族氮化物晶体13通过在下面的基底11的主表面11a上的气相外延生长。下面的基底11的主表面11a优选是以-5°至5°的角度倾斜的平面 {01-10}飞机。

公开(公告)号：US20100120231A1

公开(公告)日：2010-05-13

申请号：US12529073

申请日：2009-02-12

申请人： Hiroyuki Kitabayashi ,  Koji Katayama ,  Satoshi Arakawa

发明人： Hiroyuki Kitabayashi ,  Koji Katayama ,  Satoshi Arakawa

IPC分类号： H01L21/20 ,  H01L21/28

CPC分类号： H01L21/3081 ,  H01S5/0425 ,  H01S5/2086

摘要： A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S10) of forming a GaN-based semiconductor layer, a step (S20) of forming an Al film on the GaN-based semiconductor layer, a step (S30, S40) of forming a mask layer composed of a material having a lower etching rate than that of the material constituting the Al film, a step (S50) of partially removing the Al film and the GaN-based semiconductor layer using the mask layer as a mask to form a ridge portion, a step (S60) of retracting the positions of the side walls at the ends of the Al film from the positions of the side walls of the mask layer, a step (S70) of forming a protection film composed of a material having a lower etching rate than that of the material constituting the Al film on the side surfaces of the ridge portion and on the upper surface of the mask layer, and a step (S80) of removing the Al film to remove the mask layer and the protection film formed on the upper surface of the mask layer.

摘要翻译： 根据本发明的制造半导体器件的方法包括以下步骤：形成GaN基半导体层的步骤（S10），在GaN基半导体层上形成Al膜的步骤（S20）， 形成由具有比构成Al膜的材料的蚀刻速率低的材料构成的掩模层的步骤（S30，S40）;使用该步骤（S50）部分地除去Al膜和GaN基半导体层 掩模层作为掩模以形成脊部;步骤（S60），从掩模层的侧壁的位置缩回Al膜的端部处的侧壁的位置，形成步骤（S70） 由掩模层的侧表面和掩模层的上表面上的蚀刻速率低于构成Al膜的材料的蚀刻速率低的材料形成的保护膜，以及除去Al膜的步骤（S80） 以去除掩模层和形成的保护膜 n掩模层的上表面。

公开(公告)号：US20090127664A1

公开(公告)日：2009-05-21

申请号：US12273179

申请日：2008-11-18

申请人： Takuji OKAHISA ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

发明人： Takuji OKAHISA ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC分类号： H01L31/20 ,  H01L29/20

CPC分类号： H01L21/02576 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262

摘要： A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a first group III nitride semiconductor crystal doped with silicon by using silicon tetrachloride (SiCl4) gas as doping gas, on the underlying substrate by vapor phase growth. The growth rate of the first group III nitride semiconductor crystal is at least 200 μm/h and not more than 2000 μm/h.

摘要翻译： III族氮化物半导体晶体的生长方法包括以下步骤：制备下面的衬底，并且通过使用四氯化硅（SiCl 4）气体作为掺杂气体来生长掺杂有硅的第一III族氮化物半导体晶体，通过气相生长在下面的衬底上 成长。 第一III族氮化物半导体晶体的生长速率为至少200μm/ h且不超过2000μm/ h。

公开(公告)号：US20090127663A1

公开(公告)日：2009-05-21

申请号：US12273137

申请日：2008-11-18

申请人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

发明人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC分类号： H01L29/20 ,  H01L21/322

CPC分类号： H01L21/02576 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262

摘要： A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a group III nitride semiconductor crystal doped with silicon by using silicon tetrafluoride gas as doping gas, on the underlying substrate by vapor phase growth.

摘要翻译： III族氮化物半导体晶体的生长方法包括以下步骤：通过使用四氟化硅气体作为掺杂气体，通过气相生长在底层衬底上生长掺杂有硅的III族氮化物半导体晶体。

公开(公告)号：US20090127662A1

公开(公告)日：2009-05-21

申请号：US12273101

申请日：2008-11-18

申请人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

发明人： Takuji Okahisa ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC分类号： H01L29/20

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B29/403

摘要： A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10−4 Ω·m and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.

摘要翻译： III族氮化物半导体晶体基板的直径为至少25mm且不大于160mm。 III族氮化物半导体晶体衬底的电阻率至少为1×10 -4Ω·cm且不大于0.1Ω·cm。 III族氮化物半导体晶体的直径方向的电阻率分布为-30％以上且30％以下。 III族氮化物半导体晶体的厚度方向的电阻率分布为〜16％以上且16％以下。

公开(公告)号：US20080232553A1

公开(公告)日：2008-09-25

申请号：US12045383

申请日：2008-03-10

申请人： Toshitaka Agano ,  Satoshi Arakawa ,  Atsushi Fukuda

发明人： Toshitaka Agano ,  Satoshi Arakawa ,  Atsushi Fukuda

IPC分类号： H05G1/02

CPC分类号： A61B6/587 ,  A61B6/4429 ,  A61B6/547

摘要： A radiological imaging apparatus is provided that includes a radiation source, a radiation detection section that detects radiation that passes through a subject, a signal detection section that detects signals from a plurality of signal generating sections disposed on the radiation detection section in a manner such that each signal generating section is in a different location, a signal comparison section that compares the signals detected by the signal detection section, a positional relationship judgment section that makes a judgment as to whether a positional relationship between the radiation detection section and the radiation source is a predetermined positional relationship based on a comparison result, a position control section that controls a position of at least one of the radiation source and the radiation detection section to maintain the positional relationship as the predetermined positional relationship based on a judgment result, a position control holding section that holds the radiation source and the radiation detection section in the position set by the position control section after the positional relationship is set to the prescribed positional relationship, and a notification section that provides notification in a case where the positional relationship judgment section makes a judgment that the positional relationship is not the prescribed positional relationship during holding.

摘要翻译： 提供了一种放射线成像装置，其包括：辐射源，检测通过对象的辐射的放射线检测部;信号检测部，其以设置在所述放射线检测部上的多个信号生成部检测信号， 每个信号产生部分在不同的位置，信号比较部分，其对由信号检测部分检测的信号进行比较;位置关系判断部分，判断辐射检测部分和辐射源之间的位置关系是否为 基于比较结果的预定位置关系;位置控制部分，其基于判断结果控制所述辐射源和所述辐射检测部分中的至少一个的位置，以将所述位置关系保持为所述预定位置关系;位置控制部 持有部分 在将所述位置关系设定为所述规定的位置关系之后，将所述位置控制部所设定的位置处的所述辐射源和所述放射线检测部保持在所述位置关系判断部进行判断的情况下提供通知的通知部 位置关系在保持期间不是规定的位置关系。

公开(公告)号：US20060243933A1

公开(公告)日：2006-11-02

申请号：US11477586

申请日：2006-06-30

申请人： Satoshi Arakawa

发明人： Satoshi Arakawa

IPC分类号： G03B42/08

CPC分类号： G03B42/08

摘要： One surface of a stimulable phosphor sheet supported at a position for image recording is exposed to radiation, and a radiation image is stored on the stimulable phosphor sheet. Image readout is performed from the side of the other surface of the stimulable phosphor sheet supported at the position for image recording. Energy remaining on the stimulable phosphor sheet is then released by irradiating erasing light to an entire area of the stimulable phosphor sheet with a sheet-shaped erasing light source, which has uniform transmissivity to radiation and is located close to the one surface of the stimulable phosphor sheet supported at the position for image recording.

公开(公告)号：US20060151728A1

公开(公告)日：2006-07-13

申请号：US11324296

申请日：2006-01-04

申请人： Satoshi Arakawa

发明人： Satoshi Arakawa

IPC分类号： G03B42/08

CPC分类号： G03B42/08

摘要： A stimulable phosphor sheet, on which a radiation image of an object has been stored, is scanned with stimulating rays, which cause the stimulable phosphor sheet to emit light in proportion to the amount of energy stored on the stimulable phosphor sheet during exposure of the stimulable phosphor sheet to radiation. The light, which is emitted by the stimulable phosphor sheet when the stimulable phosphor sheet is scanned with the stimulating rays, is detected, and an image signal representing the radiation image of the object is acquired. The scanning of the stimulable phosphor sheet with the stimulating rays is performed from an object image-carrying edge area, in which a radiation image pattern representing the object has been stored, the object image-carrying edge area being one of edge areas of the stimulable phosphor sheet.

摘要翻译： 用刺激光线扫描其上已经存储有物体的放射线图像的可刺激的荧光粉片，其使得可刺激的荧光体片材在暴露于可刺激的荧光体片材期间与存储在可刺激的磷光体片材上的能量的量成比例地发光 荧光片照射。 检测可刺激的荧光体片用刺激光线扫描时由可刺激的荧光体片发射的光，并且获取表示物体的辐射图像的图像信号。 通过刺激光线对可刺激的荧光体片材的扫描是从存储有表示物体的放射线图像图案的物体图像携带边缘区域进行的，物体图像载体边缘区域是可刺激的边缘区域之一 荧光粉片。