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公开(公告)号：US4512801A
公开(公告)日：1985-04-23
申请号：US561650
申请日：1983-12-15
CPC分类号： B01F13/0809 , C21C1/02 , C22B9/003 , C22B9/10 , F27B14/061 , H05B6/18 , B01F2215/0075 , F27B2014/0812 , F27B2014/0887 , Y02P10/253
摘要： Apparatus for desulfurizing and heating molten metal includes a refractory body having an open top receptacle, an outlet and a passageway communicating the receptacle with the outlet. An electric coil is disposed in surrounding relation to the receptacle. The upper end of the coil is disposed generally equal to the level of the molten metal in the receptacle. The molten metal is supplied to the receptacle through a first feed member, and a desulfurizing agent is supplied to the receptacle through a second feed member. Upon excitation of the coil, electric currents are induced in the molten metal to heat it and also to agitate it to mix the desulfurizing agent with the molten metal.
摘要翻译： 用于脱硫和加热熔融金属的设备包括具有敞开的顶部容器，出口和使插座与出口连通的通道的耐火体。 电气线圈围绕容器设置。 线圈的上端大体上等于容器中熔融金属的高度。 熔融金属通过第一进料构件供给到容器中，并且脱硫剂通过第二进料构件供给到容器。 在线圈激励时，在熔融金属中引入电流以加热它，并且还搅拌它以将脱硫剂与熔融金属混合。
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公开(公告)号：US4375885A
公开(公告)日：1983-03-08
申请号：US212882
申请日：1980-12-04
IPC分类号： C21C5/52 , F27B1/21 , F27B3/04 , F27B3/18 , F27D3/00 , F27D3/10 , F27D3/14 , H05B6/34 , C21C5/04
CPC分类号： F27B1/21 , C21C5/5247 , F27B3/045 , F27B3/18 , H05B6/34 , F27D2003/0054 , F27D3/10 , F27D3/14 , Y02P10/253
摘要： A reverberatory furnace includes a reverberatory furnace body for melting metal and holding molten metal, having an opening well, an electromagnetic trough for transporting hot molten metal from the reverberatory furnace body upwardly and slantly, having an inductor for generating a travelling magnetic field, and a guide trough for guiding the hot molten metal from the electromagnetic trough to the opening well. The hot molten metal is circulated through the reverberatory furnace.
摘要翻译： 反射炉包括用于熔化金属并保持熔融金属的反射炉体，具有开口孔，用于从反射炉体向上且倾斜地输送热熔融金属的电磁槽，具有用于产生行进磁场的电感器，以及 引导槽，用于将热熔融金属从电磁槽引导到开口井。 热熔融金属循环通过反射炉。
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公开(公告)号：US07402475B2
公开(公告)日：2008-07-22
申请号：US11265292
申请日：2005-11-03
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L27/1104 , H01L27/11
摘要： In forming five trenches buried with an intermediate conductive layer for connecting transfer MISFETs and driving MISFETs with vertical MISFETs formed thereover, in which the second and third trenches, and the first, fourth, and fifth trenches are formed separately by twice etching using first and second photoresist films as a mask. Since all the trenches can be formed at a good accuracy even in a case where the shortest distance between the first trench and the second or third trench, and the shortest distance between the second or third trench and the fourth trench is smaller than the resolution limit for the exposure light, the distance between each of the five trenches arranged in one identical memory cell can be reduced to be smaller than resolution limit for the exposure light.
摘要翻译： 在形成五个埋入中间导电层的沟槽中，用于连接转移MISFET和驱动MISFET与其上形成的垂直MISFET，其中第二和第三沟槽以及第一，第四和第五沟槽分别通过使用第一和第二 光刻胶膜作为掩模。 由于即使在第一沟槽和第二或第三沟槽之间的最短距离以及第二沟槽和第三沟槽与第四沟槽之间的最短距离小于分辨率极限的情况下，也可以以高精度形成所有沟槽 对于曝光光，布置在一个相同存储单元中的五个沟槽中的每一个之间的距离可以减小到小于曝光光的分辨率极限。
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公开(公告)号：US20070287298A1
公开(公告)日：2007-12-13
申请号：US11808650
申请日：2007-06-12
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/0332 , H01L21/0337 , H01L21/31058 , H01L21/31155 , H01L21/76808 , H01L21/76825 , H01L21/76826
摘要： It is an object of the present invention to provide a method of manufacturing a semiconductor device that reduces the deterioration in processed configuration and the pattern roughness of a film to be processed, and is close to the original design and applicable to a dual damascene step and the like. The manufacturing method comprises a processing mask layer forming step of forming a processing mask layer (a lower organic film and a middle layer) comprising at least one film, and hardening treatment for at least one film of the processing mask layer by applying a film and heat hardening treatment; a processing mask layer etching step of applying a resist film for exposure to the processing mask layer, exposing and developing it to form a resist pattern, and etching the processing mask layer using the resist pattern as a mask; and a film to be processed etching step of etching the film to be processed using the pattern of the processing mask layer formed at the processing mask layer etching step as a mask.
摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，该半导体器件减少加工结构的劣化和待加工薄膜的图案粗糙度，并且接近原始设计并且可应用于双镶嵌步骤和 类似。 该制造方法包括：处理掩模层形成步骤，形成包括至少一个膜的处理掩模层（下部有机膜和中间层），以及通过施加膜和至少一层加工掩模层的硬化处理 热硬化处理; 处理掩模层蚀刻步骤，将用于曝光的抗蚀剂膜施加到处理掩模层，曝光和显影以形成抗蚀剂图案，并使用抗蚀剂图案作为掩模蚀刻处理掩模层; 以及使用在处理掩模层蚀刻步骤形成的处理掩模层的图案作为掩模来蚀刻待处理的膜的待处理蚀刻步骤的膜。
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公开(公告)号：US06365894B2
公开(公告)日：2002-04-02
申请号：US09810589
申请日：2001-03-19
IPC分类号： H01J37147
CPC分类号： H01F7/20 , H01J37/1472 , H01J2237/152 , H05H7/04
摘要： An electromagnet comprises a pair of magnetic pole 1a and 1b, a return yoke 3, exciting coils 4 and 5, etc. In an interior portion of a magnetic pole, plural spacers 2a-2g are provided putting side by side in a horizontal direction. Each of the spaces 2a-2g is an air layer and a longitudinal cross-section is a substantially rectangular shape and the space has a lengthily extending slit shape in a vertical direction against a paper face in FIG. 1. The plural spaces are mainly arranged toward a right side from a beam orbit center O and an interval formed between adjacent spaces is narrower toward the right side. The electromagnet having a simple magnetic pole structure and a wide effective magnetic field area in a case where a maximum magnetic field strength is increased can be secured.
摘要翻译： 一个电磁铁包括一对磁极1a和1b，一个返回磁轭3，励磁线圈4和5等。在磁极的内部，多个间隔件2a-2g在水平方向上并排放置。 空间2a-2g中的每一个是空气层，纵向截面是大致矩形形状，并且空间在图1中相对于纸面在垂直方向上具有长延伸的狭缝形状。 多个空间主要从波束轨道中心O朝向右侧布置，并且相邻空间之间形成的间隔朝向右侧较窄。 可以确保在最大磁场强度增加的情况下具有简单的磁极结构和宽的有效磁场面积的电磁体。
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公开(公告)号：US06236043B1
公开(公告)日：2001-05-22
申请号：US09070934
申请日：1998-05-01
IPC分类号： H01J37147
CPC分类号： H01F7/20 , H01J37/1472 , H01J2237/152 , H05H7/04
摘要： An electromagnet comprises a pair of magnetic pole 1a and 1b, a return yoke 3, exciting coils 4 and 5, etc. In an interior portion of a magnetic pole, plural spacers 2a-2g are provided putting side by side in a horizontal direction. Each of the spaces 2a-2g is an air layer and a longitudinal cross-section is a substantially rectangular shape and the space has a lengthily extending slit shape in a vertical direction against a paper face in FIG. 1. The plural spaces are mainly arranged toward a right side from a beam orbit center O and an interval formed between adjacent spaces is narrower toward the right side. The electromagnet having a simple magnetic pole structure and a wide effective magnetic field area in a case where a maximum magnetic field strength is increased can be secured.
摘要翻译： 一个电磁铁包括一对磁极1a和1b，一个返回磁轭3，励磁线圈4和5等。在磁极的内部，多个间隔件2a-2g在水平方向上并排放置。 空间2a-2g中的每一个是空气层，纵向截面是大致矩形形状，并且空间在图1中相对于纸面在垂直方向上具有长延伸的狭缝形状。 多个空间主要从波束轨道中心O朝向右侧布置，并且相邻空间之间形成的间隔朝向右侧较窄。 可以确保在最大磁场强度增加的情况下具有简单的磁极结构和宽的有效磁场面积的电磁体。
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7.发明授权Method for extracting charged particle beam and small-sized accelerator for charged particle beam 失效用于提取带电粒子束的方法和用于带电粒子束的小尺寸加速器
公开(公告)号：US5576602A
公开(公告)日：1996-11-19
申请号：US291560
申请日：1994-08-16
申请人： Kazuo Hiramoto , Masahiro Tadokoro , Junichi Hirota , Masatsugu Nishi , Akira Noda , Makoto Inoue
发明人： Kazuo Hiramoto , Masahiro Tadokoro , Junichi Hirota , Masatsugu Nishi , Akira Noda , Makoto Inoue
CPC分类号： H05H7/04 , A61N5/1077 , H05H7/10 , A61N2005/1087
摘要： A circular accelerator is arranged to circulate a charged particle beam through a bending function provided by a bending magnet, set a tune of the charged particle beam being circulated as it is betatron-oscillated to a predetermined value through the effect of a quadrupole magnetic field, resonate the charged particle beam being circulated at the tune set to the predetermined value in a manner to increase an amplitude of the betatron oscillations over the stability limit of resonance, thereby extracting the charged particle beam. The circular accelerator includes a bending magnet formed to generate a quadrupole magnetic field component for horizontally focusing the charged particle beam being circulated and vertically defocusing the beam and another bending magnet formed to generate a quadrupole magnetic field component for horizontally defocusing the charged particle beam being circulated and vertically focusing the beam. The accelerator is reduced in size, easily operated, and enables to keep the location of the beam extraction and the diameter of the beam constant and output an excellent charged particle beam.
摘要翻译： 圆形加速器被布置成使带电粒子束通过由弯曲磁体提供的弯曲功能循环，通过四极磁场的作用将被充电的粒子束的曲线通过反相振荡而摆动到预定值， 使带电粒子束以设定为预定值的曲线以使共振振荡稳定度增加的方式共振，从而提取带电粒子束。 圆形加速器包括弯曲磁体，该弯曲磁体形成为产生四极磁场分量，用于水平聚焦正在循环的带电粒子束并垂直散焦该光束，并且形成另一弯曲磁体以产生四极磁场分量，以使正在循环的带电粒子束水平散焦 并垂直聚焦光束。 加速器尺寸减小，操作容易，并且能够保持光束提取的位置和光束的直径恒定并输出优良的带电粒子束。
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公开(公告)号：US20110250752A1
公开(公告)日：2011-10-13
申请号：US13165888
申请日：2011-06-22
IPC分类号： H01L21/28
CPC分类号： H01L27/1104 , H01L27/11
摘要： In forming five trenches buried with an intermediate conductive layer for connecting transfer MISFETs and driving MISFETs with vertical MISFETs formed thereover, in which the second and third trenches, and the first, fourth, and fifth trenches are formed separately by twice etching using first and second photoresist films as a mask. Since all the trenches can be formed at a good accuracy even in a case where the shortest distance between the first trench and the second or third trench, and the shortest distance between the second or third trench and the fourth trench is smaller than the resolution limit for the exposure light, the distance between each of the five trenches arranged in one identical memory cell can be reduced to be smaller than resolution limit for the exposure light.
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公开(公告)号：US07595266B2
公开(公告)日：2009-09-29
申请号：US12146599
申请日：2008-06-26
IPC分类号： H01L21/44
CPC分类号： H01L27/1104 , H01L27/11
摘要： In forming five trenches buried with an intermediate conductive layer for connecting transfer MISFETs and driving MISFETs with vertical MISFETs formed thereover, in which the second and third trenches, and the first, fourth, and fifth trenches are formed separately by twice etching using first and second photoresist films as a mask. Since all the trenches can be formed at a good accuracy even in a case where the shortest distance between the first trench and the second or third trench, and the shortest distance between the second or third trench and the fourth trench is smaller than the resolution limit for the exposure light, the distance between each of the five trenches arranged in one identical memory cell can be reduced to be smaller than resolution limit for the exposure light.
摘要翻译： 在形成五个埋入中间导电层的沟槽中，用于连接转移MISFET和驱动MISFET与其上形成的垂直MISFET，其中第二和第三沟槽以及第一，第四和第五沟槽分别通过使用第一和第二 光刻胶膜作为掩模。 由于即使在第一沟槽和第二或第三沟槽之间的最短距离以及第二沟槽和第三沟槽与第四沟槽之间的最短距离小于分辨率极限的情况下，也可以以高精度形成所有沟槽 对于曝光光，布置在一个相同存储单元中的五个沟槽中的每一个之间的距离可以减小到小于曝光光的分辨率极限。
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公开(公告)号：US07247869B2
公开(公告)日：2007-07-24
申请号：US10971004
申请日：2004-10-25
IPC分类号： G01J1/00
CPC分类号： A61N5/1048 , A61N5/1075 , A61N2005/1074 , A61N2005/1087 , A61N2005/1095 , G21K5/04
摘要： A particle therapy system capable of measuring energy of a charged particle beam even during irradiation of the charged particle beam is provided. A beam delivery (irradiation) system comprises a block collimator constituted by a pair of collimator members, and an energy detector mounted to one of the collimator members to be disposed on the upstream side thereof. When the pair of collimator members are moved in directions away from each other, a beam passage is formed between them. The energy detector constitutes an energy measuring device together with a signal processing unit. A part of the ion beam having reached the interior of the irradiation nozzle is irradiated to a patient through the beam passage. When a part of the remaining ion beam enters the energy detector, electric charges generate in the energy detector. The signal processing unit determines energy of the ion beam based on a position within the energy detector at which electric charges have generated in maximum amount.
摘要翻译： 提供了即使在带电粒子束的照射期间也能够测量带电粒子束的能量的粒子治疗系统。 射束（照射）系统包括由一对准直器构件构成的块准直器，以及安装在准备器件中的一个待设置在其上游侧的能量检测器。 当一对准直器构件沿彼此远离的方向移动时，在它们之间形成梁通道。 能量检测器与信号处理单元一起构成能量测量装置。 已经到达照射喷嘴内部的离子束的一部分通过束通道照射到患者身上。 当剩余离子束的一部分进入能量检测器时，在能量检测器中产生电荷。 信号处理单元基于能量检测器内以最大量产生电荷的位置来确定离子束的能量。
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