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    ELECTRODE FOR STORAGE BATTERY
    1.
    发明申请
    ELECTRODE FOR STORAGE BATTERY 有权
    蓄电池电极

    公开(公告)号：US20140234700A1

    公开(公告)日：2014-08-21

    申请号：US14180573

    申请日：2014-02-14

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Tamae Moriwaka ,  Satoshi Seo ,  Takuya Hirohashi ,  Kunio Hosoya ,  Shunsuke Adachi

    IPC分类号： H01M4/583 ,  H01M4/58 ,  H01M4/62 ,  H01M4/136 ,  H01M10/054 ,  H01M10/0568 ,  H01M4/133

    CPC分类号： H01M4/625 ,  H01M4/136 ,  H01M4/5825 ,  H01M4/587 ,  H01M10/054 ,  H01M10/0568

    摘要： With a small amount of a conductive additive, an electrode for a storage battery including an active material layer which is highly filled with an active material is provided. The use of the electrode enables fabrication of a storage battery having high capacity per unit volume of the electrode. By using graphene as a conductive additive in an electrode for a storage battery including a positive electrode active material, a network for electron conduction through graphene is formed. Consequently, the electrode can include an active material layer in which particles of an active material are electrically connected to each other by graphene. Therefore, graphene is used as a conductive additive in an electrode for a sodium-ion secondary battery including an active material with low electric conductivity, for example, an active material with a band gap of 3.0 eV or more.

    摘要翻译： 通过少量导电添加剂，提供了包含高活性物质的活性物质层的蓄电池用电极。 使用电极可以制造具有每单位体积电极的高容量的蓄电池。 通过在包含正极活性物质的蓄电池用电极中使用石墨烯作为导电性添加剂，形成通过石墨烯进行电子传导的网络。 因此，电极可以包括活性材料层，其中活性材料的颗粒通过石墨烯彼此电连接。 因此，在包含具有低导电性的活性物质的钠离子二次电池用电极，例如带隙为3.0eV以上的活性物质中，使用石墨烯作为导电性添加剂。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09443987B2

    公开(公告)日：2016-09-13

    申请号：US14456069

    申请日：2014-08-11

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Akiharu Miyanaga ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Motoki Nakashima ,  Masahiro Takahashi ,  Shunsuke Adachi ,  Takuya Hirohashi

    IPC分类号： H01L29/66 ,  H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/49

    CPC分类号： H01L29/78606 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

    摘要： In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

    摘要翻译： 在使用包括氧化物半导体的晶体管的半导体器件中，电特性的变化被抑制并提高了可靠性。 半导体器件包括绝缘表面上的栅电极; 与所述栅电极重叠的氧化物半导体膜; 栅极绝缘膜，位于栅电极和氧化物半导体膜之间并与氧化物半导体膜接触; 与氧化物半导体膜的与栅极绝缘膜接触的表面的相反侧的表面接触的保护膜; 以及与氧化物半导体膜接触的一对电极。 通过电子自旋共振光谱测定的栅极绝缘膜或保护膜的自旋密度低于1×1018自旋/ cm3，优选为1×1017以上/ cm3以上，低于1×1018自旋/ cm3。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10121903B2

    公开(公告)日：2018-11-06

    申请号：US15439997

    申请日：2017-02-23

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Shunpei Yamazaki ,  Yasutaka Nakazawa ,  Masami Jintyou ,  Junichi Koezuka ,  Kenichi Okazaki ,  Takuya Hirohashi ,  Shunsuke Adachi

    IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L27/32

    摘要： A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.