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公开(公告)号：US10250195B2
公开(公告)日：2019-04-02
申请号：US15804192
申请日：2017-11-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young-Min Kim , Jae-Seung Lee , Pil-Sung Jang , Tae-Hwan Jin
Abstract: A wireless communication device includes an amplifier block amplifying a radio frequency (RF) input signal. The amplifier block includes: a first amplification unit and a second amplification unit. The first amplification unit amplifies the RF input signal to generate a first RF amplified signal including a first non-linearity factor and a second RF amplified signal including a second non-linearity factor, and combines the first and second RF signals to generate a third RF amplified signal. The second amplification unit receives and amplifies the third RF amplified signal to output an RF output signal corresponding to the at least one carrier.
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公开(公告)号：US10121776B2
公开(公告)日：2018-11-06
申请号：US15364890
申请日：2016-11-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung-Jun Song , Young-Min Kim , Chang-Su Kim , Han-Gu Kim
IPC: H01L29/78 , H01L27/02 , H01L29/866 , H01L23/535 , H01L29/786 , H01L27/12
Abstract: A film-type semiconductor package includes a semiconductor integrated circuit and a dummy metal pattern. The semiconductor integrated circuit is formed on a film and includes an electrostatic discharge (ESD) protection circuit. The dummy metal pattern is formed on the film and is electrically connected to the ESD protection circuit through a first wiring formed on the film.
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公开(公告)号：US11586538B2
公开(公告)日：2023-02-21
申请号：US17359873
申请日：2021-06-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwang-Kyu Bang , Young-Min Kim , Kwan-Bin Yim
IPC: G06F12/0804 , G06F3/06
Abstract: Provided is a storage device including a power management integrated circuit chip; multiple non-volatile memories configured to receive power from the power management integrated circuit chip; and a controller configured to control the non-volatile memories, wherein the controller checks a state of the power during a read operation and a write operation on the non-volatile memories and, when a power failure is detected in at least one of the non-volatile memories, implements a power failure detection mode regarding the read operation and the write operation on all of the non-volatile memories.
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公开(公告)号：US11515843B2
公开(公告)日：2022-11-29
申请号：US17223121
申请日：2021-04-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young-Min Kim , Jong-Soo Lee , Jong-Woo Lee , Joong-Ho Lee , Ji-Young Lee , Pil-Sung Jang , Thomas Byunghak Cho , Tae-Hwan Jin
Abstract: A receiver includes an amplification block supporting carrier aggregation (CA). The amplification block includes a first amplifier circuit configured to receive a radio frequency (RF) input signal at a block node from an outside source, amplify the RF input signal, and output the amplified RF input signal as a first RF output signal. The first amplifier circuit includes a first amplifier configured to receive the RF input signal through a first input node to amplify the RF input signal, and a first feedback circuit coupled between the first input node and a first internal amplification node of the first amplifier to provide feedback to the first amplifier.
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公开(公告)号：US20150228786A1
公开(公告)日：2015-08-13
申请号：US14542867
申请日：2014-11-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wook-Yeol Yi , Ki-Hong Nam , Dong-Chan Kim , Hee-Don Hwang , Young-Min Kim , Duk-Young Jang
IPC: H01L29/78 , H01L29/423
CPC classification number: H01L29/7843 , H01L21/76224 , H01L29/4236 , H01L29/66621 , H01L29/78 , H01L29/7827 , H01L29/7846
Abstract: A semiconductor device includes a semiconductor substrate having an active region. A gate trench is disposed to cross the active region. First and second source/drain regions are disposed in the active region at both sides of the gate trench. A gate electrode is disposed in the gate trench. A gate dielectric layer is disposed between the gate electrode and the active region. A stress pattern is disposed on the gate electrode and in the gate trench. The stress pattern has a lower residual stress than silicon nitride.
Abstract translation: 半导体器件包括具有有源区的半导体衬底。 栅极沟槽被布置成越过有源区域。 第一和第二源极/漏极区域设置在栅极沟槽的两侧的有源区域中。 栅电极设置在栅极沟槽中。 栅电介质层设置在栅电极和有源区之间。 应力图案设置在栅极电极和栅极沟槽中。 应力模式比氮化硅具有更低的残余应力。
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Patent Agency Ranking
公开(公告)号：US08829686B2
公开(公告)日：2014-09-09
申请号：US13678205
申请日：2012-11-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji-Sun Hong , Young-Min Kim , Jung-Woo Kim , Min-Ok Na , Hyo-Chang Ryu , Jong-Bo Shim
CPC classification number: H01L23/498 , H01L23/3128 , H01L23/49816 , H01L24/73 , H01L25/105 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/45139 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/1023 , H01L2225/1058 , H01L2924/15311 , H01L2924/15321 , H01L2924/1815 , H01L2924/18161 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
Abstract: A package-on-package assembly includes first and second packages and an adhesion member positioned between the first and second packages and adhering the first and second packages to one another. The first package may include a first substrate having a first surface and a second surface facing each other and including a land pad formed on the first surface, a first semiconductor chip formed on the first surface, and a first encapsulant member encapsulating the first surface and the first semiconductor chip and including a through-via spaced apart from the first semiconductor chip and exposing the land pad and a trench formed between the first semiconductor chip and the through-via, and wherein at least a portion of the trench is filled with adhesion member material.
Abstract translation: 包装包装组件包括第一和第二包装以及定位在第一和第二包装之间并将第一和第二包装彼此粘合的粘合部件。 第一封装可以包括具有第一表面和第二表面的第一衬底，第一表面和第二表面彼此面对并且包括形成在第一表面上的焊盘焊盘，形成在第一表面上的第一半导体芯片和封装第一表面的第一密封剂构件， 所述第一半导体芯片并且包括与所述第一半导体芯片间隔开的通孔，并且暴露所述焊盘焊盘和形成在所述第一半导体芯片和所述通孔之间的沟槽，并且其中所述沟槽的至少一部分填充有粘附 会员资料
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公开(公告)号：US20130187288A1
公开(公告)日：2013-07-25
申请号：US13678205
申请日：2012-11-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji-Sun Hong , Young-Min Kim , Jung-Woo Kim , Min-Ok Na , Hyo-Chang Ryu , Jong-Bo Shim
IPC: H01L23/498
CPC classification number: H01L23/498 , H01L23/3128 , H01L23/49816 , H01L24/73 , H01L25/105 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/45139 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/1023 , H01L2225/1058 , H01L2924/15311 , H01L2924/15321 , H01L2924/1815 , H01L2924/18161 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
Abstract: A package-on-package assembly includes first and second packages and an adhesion member positioned between the first and second packages and adhering the first and second packages to one another. The first package may include a first substrate having a first surface and a second surface facing each other and including a land pad formed on the first surface, a first semiconductor chip formed on the first surface, and a first encapsulant member encapsulating the first surface and the first semiconductor chip and including a through-via spaced apart from the first semiconductor chip and exposing the land pad and a trench formed between the first semiconductor chip and the through-via, and wherein at least a portion of the trench is filled with adhesion member material.
Abstract translation: 包装包装组件包括第一和第二包装以及定位在第一和第二包装之间并将第一和第二包装彼此粘合的粘合部件。 第一封装可以包括具有第一表面和第二表面的第一衬底，第一表面和第二表面彼此面对并且包括形成在第一表面上的焊盘焊盘，形成在第一表面上的第一半导体芯片和封装第一表面的第一密封剂构件， 所述第一半导体芯片并且包括与所述第一半导体芯片间隔开的通孔，并且暴露所述焊盘焊盘和形成在所述第一半导体芯片和所述通孔之间的沟槽，并且其中所述沟槽的至少一部分填充有粘附 会员资料
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公开(公告)号：US11080186B2
公开(公告)日：2021-08-03
申请号：US16547410
申请日：2019-08-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwang-Kyu Bang , Young-Min Kim , Kwan-Bin Yim
IPC: G06F12/0804 , G06F3/06
Abstract: Provided is a storage device including a power management integrated circuit chip; multiple non-volatile memories configured to receive power from the power management integrated circuit chip; and a controller configured to control the non-volatile memories, wherein the controller checks a state of the power during a read operation and a write operation on the non-volatile memories and, when a power failure is detected in at least one of the non-volatile memories, implements a power failure detection mode regarding the read operation and the write operation on all of the non-volatile memories.
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公开(公告)号：US11005426B2
公开(公告)日：2021-05-11
申请号：US16289871
申请日：2019-03-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young-Min Kim , Jong-Soo Lee , Jong-Woo Lee , Joong-Ho Lee , Ji-Young Lee , Pil-Sung Jang , Thomas Byunghak Cho , Tae-Hwan Jin
Abstract: A receiver includes an amplification block supporting carrier aggregation (CA). The amplification block includes a first amplifier circuit configured to receive a radio frequency (RF) input signal at a block node from an outside source, amplify the RF input signal, and output the amplified RF input signal as a first RF output signal. The first amplifier circuit includes a first amplifier configured to receive the RF input signal through a first input node to amplify the RF input signal, and a first feedback circuit coupled between the first input node and a first internal amplification node of the first amplifier to provide feedback to the first amplifier.
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公开(公告)号：US10212808B2
公开(公告)日：2019-02-19
申请号：US15093111
申请日：2016-04-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Iksung Park , Heeyoub Kang , Young-Min Kim , Eunji You , Hwi-jong Yoo
IPC: H05K1/02 , H05K3/00 , H01L23/60 , H01L25/065 , H01L25/18 , H01L23/538 , G11C5/02 , G11C5/04 , G11C5/00
Abstract: Disclosed is a printed circuit hoard. The printed circuit board includes a plurality of insulation layers and a plurality of pattern layers alternately stacked. The printed circuit board includes a plurality of device areas on which semiconductor packages are mounted and a peripheral area adjacent the device areas. An electrostatic discharge pattern is in a respective pattern layer among the plurality of pattern layers and is disposed at a boundary region between a respective device area of the plurality of device areas and the peripheral area.
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