公开(公告)号：US10121776B2

公开(公告)日：2018-11-06

申请号：US15364890

申请日：2016-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Jun Song ,  Young-Min Kim ,  Chang-Su Kim ,  Han-Gu Kim

IPC: H01L29/78 ,  H01L27/02 ,  H01L29/866 ,  H01L23/535 ,  H01L29/786 ,  H01L27/12

Abstract: A film-type semiconductor package includes a semiconductor integrated circuit and a dummy metal pattern. The semiconductor integrated circuit is formed on a film and includes an electrostatic discharge (ESD) protection circuit. The dummy metal pattern is formed on the film and is electrically connected to the ESD protection circuit through a first wiring formed on the film.