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    Semiconductor substrate measuring apparatus and plasma treatment apparatus using the same
    2.
    发明授权
    Semiconductor substrate measuring apparatus and plasma treatment apparatus using the same 有权

    公开(公告)号：US11488875B2

    公开(公告)日：2022-11-01

    申请号：US16847727

    申请日：2020-04-14

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Junbum Park ,  Younghwan Kim ,  Jongsu Kim ,  Youngjoo Lee ,  Yoojin Jeong

    IPC分类号： G01B11/06 ,  G01J5/00 ,  G01B9/02 ,  H01L21/66 ,  G01N21/95 ,  H01J37/32

    摘要： A semiconductor substrate measuring apparatus includes a light source to generate irradiation light having a sequence of on/off at a predetermined interval, the light source to provide the irradiation light to a chamber with an internal space for processing a semiconductor substrate using plasma, an optical device between the light source and the chamber, the optical device to split a first measurement light into a first optical path, condensed while the light source is turned on, to split a second measurement light into a second optical path, condensed while the light source is turned off, and to synchronize with the on/off sequence, and a photodetector connected to the first and second optical paths, the photodetector to subtract spectra of first and second measurement lights to detect spectrum of reflected light, and to detect plasma emission light emitted from the plasma based on the spectrum of the second measurement light.

    SEMICONDUCTOR DEVICE
    3.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240244830A1

    公开(公告)日：2024-07-18

    申请号：US18530559

    申请日：2023-12-06

    申请人： Samsung Electronics Co., Ltd.

    发明人： Yoojin Jeong ,  Junghwan Huh

    IPC分类号： H10B12/00

    CPC分类号： H10B12/34 ,  H10B12/053 ,  H10B12/315

    摘要： A semiconductor device includes a substrate having an active region defined by an isolation layer, a word line crossing the active region and extending, within the substrate, in a first horizontal direction inside a word line trench, the word line trench being formed in the substrate and including a first sub word line trench and a second sub word line trench. A width, in the first horizontal direction, of a lower surface of the first sub word line trench is greater than a width, in the first horizontal direction, of a lower surface of the second sub word line trench, and a first distance between the lower surface of the first sub word line trench and an upper surface of the active region is less than a second distance between the lower surface of the second sub word line trench and the upper surface of the active region.