公开(公告)号：US09559002B2

公开(公告)日：2017-01-31

申请号：US14804831

申请日：2015-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Taek Lee ,  Eun-Ji Kim ,  Sin-Woo Kang ,  Yeong-Lyeol Park ,  Sung-Dong Cho

IPC: H01L21/768 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/762 ,  H01L23/48 ,  H01L25/065 ,  H01L23/522 ,  H01L21/8234 ,  H01L23/532

CPC classification number: H01L21/76898 ,  H01L21/3083 ,  H01L21/31053 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/05559 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/06181 ,  H01L2224/10126 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/73204 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A semiconductor device includes a circuit device on a substrate and a first insulating interlayer on the substrate and covering the circuit device. An electrode structure extends through the first insulating interlayer and at least partially through the substrate. An etch-stop layer pattern is disposed on a sidewall of the electrode structure on a side of the first insulating layer opposite the substrate. A blocking layer pattern is disposed on the etch-stop layer pattern. The device further includes an interconnection structure including a via portion passing through the blocking layer pattern to contact the through electrode structure and a wiring portion on the via portion and having a different width than the via portion. The semiconductor device may further include a contact plug electrically connected to the circuit device through the first insulating interlayer. The contact plug and the through electrode structure may include different metals.

Abstract translation: 半导体器件包括衬底上的电路器件和衬底上的第一绝缘中间层并覆盖电路器件。 电极结构延伸穿过第一绝缘中间层并且至少部分地穿过衬底。 蚀刻停止层图案设置在与基板相对的第一绝缘层一侧的电极结构的侧壁上。 阻挡层图案设置在蚀刻停止层图案上。 该装置还包括互连结构，其包括穿过阻挡层图案的通孔部分，以与通孔电极结构接触，并且在通孔部分上具有与通孔部分不同的宽度的布线部分。 半导体器件还可以包括通过第一绝缘中间层电连接到电路器件的接触插塞。 接触插塞和通孔电极结构可以包括不同的金属。

公开(公告)号：US09293415B2

公开(公告)日：2016-03-22

申请号：US14708800

申请日：2015-05-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Ji Kim ,  Sung-Dong Cho ,  Hyoung-Yol Mun ,  Yeong-Lyeol Park ,  Seung-Taek Lee

IPC: H01L23/52 ,  H01L23/528 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L23/481 ,  H01L23/53228 ,  H01L23/53257 ,  H01L23/564 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2924/00012 ,  H01L2924/014

Abstract: Semiconductor devices including a protection pattern for reducing galvanic corrosion and methods of forming the semiconductor devices are provided. The semiconductor devices may include a substrate including a keep out zone (KOZ) and a plurality of interconnections, which may be disposed outside of the KOZ on the substrate. The semiconductor devices may also include a through silicon via (TSV) in the KOZ. The TSV may pass through the substrate. The semiconductor device may further include a protection pattern, which may be electrically insulated from the TSV, may be disposed in the KOZ and may include a different conductive material from the TSV. A lower end of the protection pattern may be disposed at a level higher than a lower end of the TSV.

Abstract translation: 提供了包括用于减少电偶腐蚀的保护图案的半导体器件和形成半导体器件的方法。 半导体器件可以包括包括保留区（KOZ）和多个互连的衬底，其可以设置在衬底上的KOZ的外部。 半导体器件还可以包括KOZ中的硅通孔（TSV）。 TSV可以通过衬底。 半导体器件还可以包括可以与TSV电绝缘的保护图案，可以设置在KOZ中，并且可以包括与TSV不同的导电材料。 保护图案的下端可以设置在高于TSV的下端的水平。

公开(公告)号：US20160020145A1

公开(公告)日：2016-01-21

申请号：US14804831

申请日：2015-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Taek Lee ,  Eun-Ji Kim ,  Sin-Woo Kang ,  Yeong-Lyeol Park ,  Sung-Dong Cho

IPC: H01L21/768 ,  H01L21/8234 ,  H01L21/3105 ,  H01L21/762 ,  H01L21/308 ,  H01L23/532

CPC classification number: H01L21/76898 ,  H01L21/3083 ,  H01L21/31053 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/05559 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/06181 ,  H01L2224/10126 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/73204 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A semiconductor device includes a circuit device on a substrate and a first insulating interlayer on the substrate and covering the circuit device. An electrode structure extends through the first insulating interlayer and at least partially through the substrate. An etch-stop layer pattern is disposed on a sidewall of the electrode structure on a side of the first insulating layer opposite the substrate. A blocking layer pattern is disposed on the etch-stop layer pattern. The device further includes an interconnection structure including a via portion passing through the blocking layer pattern to contact the through electrode structure and a wiring portion on the via portion and having a different width than the via portion. The semiconductor device may further include a contact plug electrically connected to the circuit device through the first insulating interlayer. The contact plug and the through electrode structure may include different metals.

Abstract translation: 半导体器件包括衬底上的电路器件和衬底上的第一绝缘中间层并覆盖电路器件。 电极结构延伸穿过第一绝缘中间层并且至少部分地穿过衬底。 蚀刻停止层图案设置在与基板相对的第一绝缘层一侧的电极结构的侧壁上。 阻挡层图案设置在蚀刻停止层图案上。 该装置还包括互连结构，其包括穿过阻挡层图案的通孔部分，以与通孔电极结构接触，并且在通孔部分上具有与通孔部分不同的宽度的布线部分。 半导体器件还可以包括通过第一绝缘中间层电连接到电路器件的接触插塞。 接触插塞和通孔电极结构可以包括不同的金属。