公开(公告)号：US09182543B2

公开(公告)日：2015-11-10

申请号：US13826471

申请日：2013-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Gu Kim ,  Dong-Jae Shin ,  Yong-Hwack Shin ,  Young Choi ,  Kyoung-Ho Ha

IPC: G02B6/12 ,  G02F1/225 ,  G02F1/21

CPC classification number: G02B6/12 ,  G02B6/12004 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/063 ,  G02F2201/066 ,  G02F2202/105

Abstract: An optical integrated circuit may include a substrate including a single crystalline semiconductor material, a passive element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material, and an active element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material.

Abstract translation: 光学集成电路可以包括包括单晶半导体材料的衬底，在衬底的<100>晶体取向中延伸并包括单晶半导体材料的无源元件和以<110>晶体取向延伸的有源元件 并且包括单晶半导体材料。

公开(公告)号：US20160178847A1

公开(公告)日：2016-06-23

申请号：US14962107

申请日：2015-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Gu Kim ,  Dong-Hyun KIM ,  Jin-Kwon BOK ,  Dong-Jae SHIN ,  In-Sung JOE ,  Kyoung-Ho HA

IPC: G02B6/34 ,  G02B6/124 ,  G02B6/122

CPC classification number: G02B6/34 ,  G02B6/1228 ,  G02B6/124 ,  G02B6/4206 ,  G02B6/4215

Abstract: An optical coupler includes a tapered portion and a grating portion. The tapered portion has a width in a second direction increasing along a first direction substantially perpendicular to the second direction. The tapered portion includes first and second ends opposed to each other in the first direction. The first end has a first width, and the second end has a second width greater than the first width. The grating portion is connected to the second end of the tapered portion, and has a curvature radius greater than a distance to the first end of the tapered portion.

Abstract translation: 光耦合器包括锥形部分和光栅部分。 锥形部分具有沿着基本上垂直于第二方向的第一方向增加的沿第二方向的宽度。 锥形部分包括在第一方向上彼此相对的第一和第二端。 第一端具有第一宽度，并且第二端具有大于第一宽度的第二宽度。 光栅部分连接到锥形部分的第二端，并且具有大于距锥形部分的第一端的距离的曲率半径。

公开(公告)号：US11233374B2

公开(公告)日：2022-01-25

申请号：US16152661

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho Cha ,  Seong-Gu Kim ,  Dong-Jae Shin ,  Yong-Hwack Shin ,  Kyoung-Ho Ha

IPC: H01S5/02 ,  H01S5/10 ,  H01S5/20 ,  H01S5/024 ,  H01S5/026 ,  H01S5/323 ,  H01S5/042 ,  H01S5/40 ,  H01S5/32 ,  H01S5/343 ,  H01S5/34 ,  H01S5/125 ,  H01S5/227

Abstract: A semiconductor laser device includes a first cladding including gallium nitride (GaN) on a substrate, a light waveguide on the first cladding, a first contact pattern, a first SCH pattern, a first active pattern, a second SCH pattern, a second cladding and a second contact pattern sequentially stacked on the light waveguide, and first and second electrodes on the first and second contact patterns, respectively.

公开(公告)号：US09897753B2

公开(公告)日：2018-02-20

申请号：US15388951

申请日：2016-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Kwon Bok ,  Kyoung-Ho Ha ,  Dong-Jae Shin ,  Seong-Gu Kim ,  Kwan-Sik Cho ,  Beom-Suk Lee ,  Jung-Ho Cha ,  Hyun-Il Byun ,  Dong-Hyun Kim ,  Yong-Hwack Shin ,  Jung-Hye Kim

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/125 ,  G02B6/136

CPC classification number: G02B6/1228 ,  G02B6/125 ,  G02B6/136 ,  G02B2006/12097

Abstract: An optical device includes a substrate; a trench in a portion of the substrate; a clad layer arranged in the trench; a first structure arranged on the clad layer to have a first depth; and a second structure arranged on the clad layer to have a second depth different from the first depth.