Abstract:
An optical integrated circuit may include a substrate including a single crystalline semiconductor material, a passive element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material, and an active element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material.
Abstract:
An optical transmitter for an optical communication system includes a light source that outputs optical signals having a plurality of wavelengths, and a wavelength control unit. The wavelength control unit receives an optical signal from the light source, resonates an optical signal having a first wavelength, modulates the optical signal of the first wavelength with a first transmission data signal to obtain an intensity modulated optical signal, and outputs the intensity modulated optical signal. The wavelength control unit may be integrally formed on a semiconductor substrate in which a high thermal conductivity material is used. Alternatively, a trench that intercepts external heat may be formed in a boundary surface of the wavelength control unit, and may be filled with a low thermal conductivity material.
Abstract:
An optical transmitter for an optical communication system includes a light source that outputs optical signals having a plurality of wavelengths, and a wavelength control unit. The wavelength control unit receives an optical signal from the light source, resonates an optical signal having a first wavelength, modulates the optical signal of the first wavelength with a first transmission data signal to obtain an intensity modulated optical signal, and outputs the intensity modulated optical signal. The wavelength control unit may be integrally formed on a semiconductor substrate in which a high thermal conductivity material is used Alternatively, a trench that intercepts external heat may be formed in a boundary surface of the wavelength control unit, and may be filled with a low thermal conductivity material.
Abstract:
A semiconductor laser device includes a first cladding including gallium nitride (GaN) on a substrate, a light waveguide on the first cladding, a first contact pattern, a first SCH pattern, a first active pattern, a second SCH pattern, a second cladding and a second contact pattern sequentially stacked on the light waveguide, and first and second electrodes on the first and second contact patterns, respectively.
Abstract:
An optical device includes a substrate; a trench in a portion of the substrate; a clad layer arranged in the trench; a first structure arranged on the clad layer to have a first depth; and a second structure arranged on the clad layer to have a second depth different from the first depth.
Abstract:
A semiconductor package and a semiconductor device including the same. The semiconductor package includes: a package substrate; a plurality of connection elements that are disposed on the package substrate; and a semiconductor chip that includes at least one optical input/output element that transmits/receives an optical signal to/from the outside at an optical input/output angle with respect to a direction perpendicular to a bottom surface of the package substrate, and is electrically connected to the package substrate through the plurality of connection