公开(公告)号：US20140077281A1

公开(公告)日：2014-03-20

申请号：US14010961

申请日：2013-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seok-Jun WON ,  Suk-Hoon KIM ,  Hyung-Suk JUNG

IPC: H01L29/78

CPC classification number: H01L29/78 ,  H01L21/28176 ,  H01L21/28194 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

Abstract: A semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including a trench, a gate insulating film in the trench, a diffusion film on the gate insulating film, the diffusion film including a first diffusion material, a gate metal structure on the diffusion film, the gate metal structure including a second diffusion material, and a diffusion prevention film between the gate metal structure and the diffusion film, the diffusion prevention film being configured to prevent diffusion of the second diffusion material from the gate metal structure, the first diffusion material diffused from the diffusion film exists in the gate insulating film.

Abstract translation: 一种半导体器件，包括：衬底上的层间绝缘膜，所述层间绝缘膜包括沟槽，所述沟槽中的栅极绝缘膜，所述栅极绝缘膜上的扩散膜，所述扩散膜包括第一扩散材料，栅极金属结构 在扩散膜上，包括第二扩散材料的栅极金属结构和栅极金属结构和扩散膜之间的扩散防止膜，所述扩散防止膜被配置为防止第二扩散材料从栅极金属结构扩散， 从扩散膜扩散的第一扩散材料存在于栅极绝缘膜中。

公开(公告)号：US20140369115A1

公开(公告)日：2014-12-18

申请号：US14155651

申请日：2014-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook-Tae KIM ,  Young-Tak KIM ,  Ho-Sung SON ,  Seok-Jun WON ,  Ji-Hye YI ,  Chul-Woong LEE

IPC: H01L29/78 ,  G11C11/40

CPC classification number: H01L29/7851 ,  H01L29/41783 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785

Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.

Abstract translation: 提供半导体装置及其制造方法以及包括半导体装置的电子装置。 半导体器件包括形成在衬底上并包括沟槽的层间绝缘层，形成在沟槽中的栅电极，形成在栅电极的侧壁上以形成L形的第一栅极间隔件，形成在第二栅极间隔 所述第一栅极间隔物具有L形并且具有低于氮化硅的介电常数的介电常数，以及形成在所述第二栅极间隔物上的第三间隔物。

公开(公告)号：US20140070325A1

公开(公告)日：2014-03-13

申请号：US13960977

申请日：2013-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Weon-Hong KIM ,  Moon-Kyun SONG ,  Seok-Jun WON

IPC: H01L27/088 ,  H01L21/28

CPC classification number: H01L27/088 ,  H01L21/28008 ,  H01L21/823807 ,  H01L21/823857 ,  H01L27/092 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

Abstract: A semiconductor device includes a first interface film on a first area of a substrate, the first interface film including a first growth interface film and a second growth interface film on a lower portion of the first growth interface film, a first dielectric film on the first interface film, and a first gate electrode on the first dielectric film.

Abstract translation: 半导体器件包括在衬底的第一区域上的第一界面膜，第一界面膜在第一生长界面膜的下部包括第一生长界面膜和第二生长界面膜，第一介电膜在第一 界面膜和第一电介质膜上的第一栅电极。

公开(公告)号：US20140073103A1

公开(公告)日：2014-03-13

申请号：US14011095

申请日：2013-08-27

Applicant: Samsung Electronics Co. Ltd.

Inventor： Seok-Jun WON ,  Hyung-Suk JUNG

IPC: H01L29/66

CPC classification number: H01L29/66545 ,  H01L21/28088 ,  H01L21/28202 ,  H01L21/823462 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518

Abstract: A method of fabricating a semiconductor device includes providing a dummy gate insulation film formed on a substrate, the dummy gate insulation film including a first material and providing a spacer formed at least one side of the gate insulation film, the spacer including the first material, removing the first material included in the dummy gate insulation film by a first process, removing the dummy gate insulation film from which the first material has been removed by a second process different from the first process, and sequentially forming a gate insulation film and a gate electrode structure on the substrate.

Abstract translation: 一种制造半导体器件的方法包括：提供形成在衬底上的虚拟栅极绝缘膜，所述虚拟栅极绝缘膜包括第一材料并提供形成在所述栅极绝缘膜的至少一个侧面上的间隔物，所述间隔物包括所述第一材料， 通过第一工序除去包含在虚拟栅极绝缘膜中的第一材料，通过与第一工艺不同的第二工序除去已经除去第一材料的虚拟栅极绝缘膜，并顺序地形成栅极绝缘膜和栅极 基板上的电极结构。