公开(公告)号：US20160141381A1

公开(公告)日：2016-05-19

申请号：US14816568

申请日：2015-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook-Tae KIM ,  Ho-Sung Son ,  Geo-Myung Shin ,  Dong-Suk Shin ,  Si-Hyung Lee ,  Ji-Hye Yi ,  Sung-Hoon Jung ,  Yeong-Jong Jeong

IPC: H01L29/423 ,  H01L29/08 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/66545 ,  H01L29/7848 ,  H01L29/785

Abstract: Semiconductor devices and methods for fabricating the same are provided. The semiconductor devices include a fin active pattern formed to project from a substrate, a gate electrode formed to cross the fin active pattern on the substrate, a gate spacer formed on a side wall of the gate electrode and having a low dielectric constant and an elevated source/drain formed on both sides of the gate electrode on the fin active pattern. The gate spacer includes first, second and third spacers that sequentially come in contact with each other in a direction in which the gate spacer goes out from the gate electrode, and a carbon concentration of the second spacer is lower than carbon concentrations of the first and third spacers.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括从衬底突出形成的鳍状有源图案，形成为跨越衬底上的鳍状活性图案的栅极电极，形成在栅电极的侧壁上并具有低介电常数和升高的栅极间隔 源极/漏极形成在鳍状物图案上的栅电极的两侧。 栅极间隔物包括在栅极间隔物从栅电极出来的方向上依次相互接触的第一，第二和第三间隔物，第二间隔物的碳浓度低于第一和第二间隔物的碳浓度， 第三间隔物。

公开(公告)号：US20140369115A1

公开(公告)日：2014-12-18

申请号：US14155651

申请日：2014-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook-Tae KIM ,  Young-Tak KIM ,  Ho-Sung SON ,  Seok-Jun WON ,  Ji-Hye YI ,  Chul-Woong LEE

IPC: H01L29/78 ,  G11C11/40

CPC classification number: H01L29/7851 ,  H01L29/41783 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785

Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.

Abstract translation: 提供半导体装置及其制造方法以及包括半导体装置的电子装置。 半导体器件包括形成在衬底上并包括沟槽的层间绝缘层，形成在沟槽中的栅电极，形成在栅电极的侧壁上以形成L形的第一栅极间隔件，形成在第二栅极间隔 所述第一栅极间隔物具有L形并且具有低于氮化硅的介电常数的介电常数，以及形成在所述第二栅极间隔物上的第三间隔物。