公开(公告)号：US20140369115A1

公开(公告)日：2014-12-18

申请号：US14155651

申请日：2014-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook-Tae KIM ,  Young-Tak KIM ,  Ho-Sung SON ,  Seok-Jun WON ,  Ji-Hye YI ,  Chul-Woong LEE

IPC: H01L29/78 ,  G11C11/40

CPC classification number: H01L29/7851 ,  H01L29/41783 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785

Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.

Abstract translation: 提供半导体装置及其制造方法以及包括半导体装置的电子装置。 半导体器件包括形成在衬底上并包括沟槽的层间绝缘层，形成在沟槽中的栅电极，形成在栅电极的侧壁上以形成L形的第一栅极间隔件，形成在第二栅极间隔 所述第一栅极间隔物具有L形并且具有低于氮化硅的介电常数的介电常数，以及形成在所述第二栅极间隔物上的第三间隔物。