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    Storage controller and storage device including the same
    1.
    发明授权
    Storage controller and storage device including the same 有权

    公开(公告)号：US12190958B2

    公开(公告)日：2025-01-07

    申请号：US17956225

    申请日：2022-09-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jun-Ho Seo ,  Sang Yong Yoon ,  Min Soo Kim ,  Jeong Hoon Nam ,  Hyeon Su Bak

    IPC: G11C5/00 ,  G11C16/14 ,  G11C16/26

    Abstract: A storage device and an operating method of the storage device are provided. The storage device comprises a first non-volatile memory device, a second non-volatile memory device, a third non-volatile memory device a storage controller configured to control the first non-volatile memory device, the second non-volatile memory device, and the third non-volatile memory device, control the first non-volatile memory device to extract a first on-cell count value after a first soft erase operation, set first to third read level offsets of the respective first to third non-volatile memory devices based on the respective first to third on-cell count values, select the first to third defense code parameter sets each corresponding to the respective first to third read level offsets, and transmits first to third read commands based on the selected respective first to third defense code parameter sets to the respective first to third non-volatile memory devices.

    Non-volatile memory device and an operation method thereof
    3.
    发明授权
    Non-volatile memory device and an operation method thereof 有权

    公开(公告)号：US11450389B2

    公开(公告)日：2022-09-20

    申请号：US17195824

    申请日：2021-03-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jun-Ho Seo ,  Jung Ho Lee ,  Dae Sik Ham ,  Gi Baek Kim ,  Sang Yong Yoon ,  Won-Taeck Jung

    IPC: G11C16/10 ,  G11C16/30 ,  G11C16/08 ,  G11C16/04 ,  G11C16/26

    Abstract: A non-volatile memory device including: a first string including a first string select transistor, a first memory cell and a first ground select transistor, a second string including a second string select transistor, a second memory cell and a second ground select transistor, and a controller to apply a pass voltage to a first string select line from a first time, apply a first read voltage to a first word line during a first read section from the first time to a second time, apply a first ground select line voltage to a first ground select line from the first time, apply a ground voltage to a second string select line, apply the first ground select line voltage to a second ground select line during a first control section, and apply a first common source line voltage to a common source line during the first control section.

    Method and apparatus for managing open blocks in nonvolatile memory device
    5.
    发明授权
    Method and apparatus for managing open blocks in nonvolatile memory device 有权
    用于管理非易失性存储器件中的开放块的方法和装置

    公开(公告)号：US08995189B2

    公开(公告)日：2015-03-31

    申请号：US13969929

    申请日：2013-08-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang Yong Yoon ,  Dong Hyuk Chae ,  Bo Geun Kim

    IPC: G11C11/34 ,  G11C16/10 ,  G11C11/56

    CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C11/5642 ,  G11C2211/5648

    Abstract: A memory system comprises a multi-bit memory device and a memory controller that controls the multi-bit memory device. The memory system determines whether a requested program operation is a random program operation or a sequential program operation. Where the requested program operation is a random program operation, the memory controller controls the multi-bit memory device to perform operations according to a fine program close policy or a fine program open policy.

    Abstract translation: 存储器系统包括多位存储器件和控制多位存储器件的存储器控​​制器。 存储器系统确定所请求的程序操作是随机程序操作还是顺序程序操作。 在所请求的程序操作是随机程序操作的情况下，存储器控制器控制多位存储器件根据精细程序关闭策略或精细程序打开策略执行操作。

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