公开(公告)号：US20190157351A1

公开(公告)日：2019-05-23

申请号：US16251600

申请日：2019-01-18

Applicant: Samsung Electronics Co., Ltd. ,  SNU R&DB Foundation

Inventor： Kyu Sik KIM ,  Jang-Joo Kim ,  Gae Hwang Lee ,  Ryuichi Satoh ,  Yong Wan Jin ,  Dae-Ho Kim

IPC: H01L27/30

Abstract: Provided is an organic photoelectronic device including a first light-transmitting electrode positioned at a light incidence side, a second light-transmitting electrode facing the first light-transmitting electrode, a photoactive layer positioned between the first light-transmitting electrode and the second light-transmitting electrode and selectively absorbing light in a given (or, alternatively, desired or predetermined) wavelength region, and a selective light transmittance layer positioned between the first light-transmitting electrode and the photoactive layer, between the second light-transmitting electrode and the photoactive layer, or between the first light-transmitting electrode and the photoactive layer and between the second light-transmitting electrode and the photoactive layer and increasing transmittance of the light in a wavelength region other than the given (or, alternatively, desired or predetermined) wavelength region absorbed by the photoactive layer, and an electronic device including the image sensor is also provided.

公开(公告)号：US10224376B2

公开(公告)日：2019-03-05

申请号：US14794207

申请日：2015-07-08

Applicant: Samsung Electronics Co., Ltd. ,  SNU R&DB Foundation

Inventor： Kyu Sik Kim ,  Jang-Joo Kim ,  Gae Hwang Lee ,  Ryuichi Satoh ,  Yong Wan Jin ,  Dae-Ho Kim

IPC: H01L29/08 ,  H01L27/30 ,  H01L51/42 ,  H01L51/00

Abstract: Provided is an organic photoelectronic device including a first light-transmitting electrode positioned at a light incidence side, a second light-transmitting electrode facing the first light-transmitting electrode, a photoactive layer positioned between the first light-transmitting electrode and the second light-transmitting electrode and selectively absorbing light in a given (or, alternatively, desired or predetermined) wavelength region, and a selective light transmittance layer positioned between the first light-transmitting electrode and the photoactive layer, between the second light-transmitting electrode and the photoactive layer, or between the first light-transmitting electrode and the photoactive layer and between the second light-transmitting electrode and the photoactive layer and increasing transmittance of the light in a wavelength region other than the given (or, alternatively, desired or predetermined) wavelength region absorbed by the photoactive layer, and an electronic device including the image sensor is also provided.

公开(公告)号：US20170338431A1

公开(公告)日：2017-11-23

申请号：US15362964

申请日：2016-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： TAKKYUN RO ,  Kyung Bae Park ,  Ryuichi Satoh ,  Yong Wan Jin ,  Chul Joon Heo

IPC: H01L51/44 ,  H01L27/30 ,  H01L51/00

CPC classification number: H01L51/447 ,  H01L27/307 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0062 ,  H01L51/0067 ,  H01L51/0072 ,  H01L51/4253 ,  H01L51/4273 ,  H01L51/442 ,  H01L51/448 ,  H01L51/5056 ,  Y02E10/549

Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.

公开(公告)号：US10734593B2

公开(公告)日：2020-08-04

申请号：US16249055

申请日：2019-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ryuichi Satoh ,  Kyusik Kim ,  Kyung Bae Park ,  Yong Wan Jin ,  Chuljoon Heo

IPC: H01L21/00 ,  H01L51/44 ,  H01L27/30 ,  H01L51/52 ,  H01L51/00

Abstract: An organic electronic device includes an organic device including an organic material, a first protective film on the organic device, a second protective film on the first protective film and including a same material as the first protective film, and a third protective film on the second protective film.

公开(公告)号：US20180182812A1

公开(公告)日：2018-06-28

申请号：US15824177

申请日：2017-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chul Joon HEO ,  Ryuichi Satoh ,  Kyung Bae Park ,  Yeon-Hee Kim ,  Takkyun Ro ,  Takao Motoyama ,  Se Hyuck Park

IPC: H01L27/30 ,  H01L51/44

Abstract: An electronic device includes a plurality of pixel electrodes, an active layer on the plurality of pixel electrodes, an opposed electrode on the active layer and covering an entirety of an upper surface of the active layer, and a first encapsulation film on the opposed electrode wherein the opposed electrode and the first encapsulation film have a common planar shapes.

公开(公告)号：US11387278B2

公开(公告)日：2022-07-12

申请号：US15824177

申请日：2017-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chui Joon Heo ,  Ryuichi Satoh ,  Kyung Bae Park ,  Yeon-Hee Kim ,  Takkyun Ro ,  Takao Motoyama ,  Se Hyuck Park

IPC: H01L27/30 ,  H01L51/44 ,  H01L27/146

Abstract: An electronic device includes a plurality of pixel electrodes, an active layer on the plurality of pixel electrodes, an opposed electrode on the active layer and covering an entirety of an upper surface of the active layer, and a first encapsulation film on the opposed electrode wherein the opposed electrode and the first encapsulation film have a common planar shapes.

公开(公告)号：US09368756B2

公开(公告)日：2016-06-14

申请号：US14052008

申请日：2013-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ryuichi Satoh ,  Hiroshi Miyao ,  Tadao Yagi

IPC: H01L51/52 ,  H01L51/56 ,  H01L51/00

CPC classification number: H01L51/5275 ,  H01L51/0096 ,  H01L51/5268 ,  H01L51/5271 ,  H01L51/56 ,  Y02E10/549 ,  Y02P70/521

Abstract: An organic electroluminescence device includes a support substrate, a first transparent electrode on the support substrate, an organic light-emitting layer on the first transparent electrode, a second transparent electrode on the organic light-emitting layer, and a high refractive index layer arranged between the support substrate and the first transparent electrode, having at least one layer having a refractive index greater than or equal to a refractive index of the support substrate, having a light dispersion portion for dispersing incident light from the organic light-emitting layer, and having a planar surface contacting the first transparent electrode.

Abstract translation: 有机电致发光元件包括：支撑基板，支撑基板上的第一透明电极，第一透明电极上的有机发光层，有机发光层上的第二透明电极，以及设置在有机发光层之间的高折射率层 所述支撑基板和所述第一透明电极具有折射率大于或等于所述支撑基板的折射率的至少一层，具有用于分散来自所述有机发光层的入射光的光分散部，并且具有 与第一透明电极接触的平面。

公开(公告)号：US09252371B1

公开(公告)日：2016-02-02

申请号：US14593696

申请日：2015-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tadao Yagi ,  Sakurai Rie ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Xavier Bulliard ,  Ryuichi Satoh ,  Kyung Bae Park ,  Sung Young Yun ,  Gae Hwang Lee ,  Yong Wan Jin ,  Chul Joon Heo

IPC: H01L51/00 ,  H01L51/44 ,  H01L27/30

CPC classification number: H01L51/008 ,  H01L27/307 ,  H01L51/0046 ,  H01L51/0078 ,  H01L51/4253 ,  H01L51/442 ,  H01L2251/308

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode and including a first compound represented by Chemical Formula 1 or 2, and a ratio between a FWHM of a light absorption curve depending on a wavelength of the first compound in a solution state and in a thin film state satisfies the following Relationship Equation 1: FWHM2/FWHM1

Abstract translation: 有机光电子器件包括彼此面对的第一电极和第二电极，以及在第一电极和第二电极之间的有源层，并且包括由化学式1或2表示的第一化合物，以及光的FWHM之间的比率 在溶液状态和薄膜状态下取决于第一化合物的波长的吸收曲线满足以下关系式1：FWHM2 / FWHM1 <2.5。 在关系式1中，FWHM1是取决于溶液状态的波长的光吸收曲线的FWHM，FWHM2是取决于薄膜状态的波长的光吸收曲线的FWHM。

公开(公告)号：US20190157594A1

公开(公告)日：2019-05-23

申请号：US16258952

申请日：2019-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Takkyun RO ,  Kyung Bae Park ,  Ryuichi Satoh ,  Yong Wan Jin ,  Chul Joon Heo

IPC: H01L51/44 ,  H01L51/50 ,  H01L51/00 ,  H01L51/42 ,  H01L27/30

Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.

公开(公告)号：US10236461B2

公开(公告)日：2019-03-19

申请号：US15362964

申请日：2016-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Takkyun Ro ,  Kyung Bae Park ,  Ryuichi Satoh ,  Yong Wan Jin ,  Chul Joon Heo

IPC: H01L51/44 ,  H01L27/30 ,  H01L51/00 ,  H01L51/42 ,  H01L51/50

Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.