公开(公告)号：US20170278797A1

公开(公告)日：2017-09-28

申请号：US15618811

申请日：2017-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANGHO RHA ,  JONGMIN BAEK ,  WOOKYUNG YOU ,  SANGHOON AHN ,  NAE-IN LEE

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/02 ,  H01L21/321 ,  H01L21/288 ,  H01L21/306 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/288 ,  H01L21/306 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a capping layer on a metal pattern and on an adjacent portion of an insulating layer, the capping layer comprising a first etch selectivity, with respect to the insulating layer, on the metal pattern and a second etch selectivity, with respect to the insulating layer, on the portion of the insulating layer. Moreover, the method may include forming a recess region adjacent the metal pattern by removing the capping layer from the portion of the insulating layer. At least a portion of the capping layer may remain on an uppermost surface of the metal pattern after removing the capping layer from the portion of the insulating layer. Related semiconductor devices are also provided.