公开(公告)号：US09093369B2

公开(公告)日：2015-07-28

申请号：US13783663

申请日：2013-03-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoocheol Shin ,  Min Kyu Yang

IPC: H01L29/02 ,  H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2436 ,  H01L27/2454 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

Abstract: A semiconductor device includes a substrate extending in a horizontal direction. An active pillar is present on the substrate extending in a vertical direction relative to the horizontal direction of extension of the substrate. A variable resistive pattern is present on the substrate extending in the vertical direction along the active pillar, an electrical resistance of the variable resistive pattern being variable in response to an oxidation or reduction thereof. A gate is present at a sidewall of the active pillar.

Abstract translation: 半导体器件包括沿水平方向延伸的衬底。 有源柱存在于基板上，相对于基板的延伸水平方向在垂直方向上延伸。 可变电阻图案存在于沿着有源柱沿垂直方向延伸的衬底上，可变电阻图案的电阻响应于氧化或还原而变化。 门处于活动柱的侧壁处。

公开(公告)号：US20140078812A1

公开(公告)日：2014-03-20

申请号：US14021412

申请日：2013-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunsu Ju ,  Min Kyu Yang ,  Eunmi Kim ,  Seonggeon Park ,  Ingyu Baek

IPC: G11C13/00

CPC classification number: G11C13/0002 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/76

Abstract: A method of operating a resistive non-volatile memory can be provided by applying a forming voltage across first and second electrodes of a selected memory cell in the variable resistance non-volatile memory device during an operation to the selected memory cell. The forming voltage can be a voltage level that is limited to less than a breakdown voltage of an insulation film included in selected memory cell between a variable resistance film and one of first electrode. Related devices and materials are also disclosed.

Abstract translation: 可以通过在对所选择的存储器单元的操作期间将可选择的电阻非易失性存储器件中的所选存储单元的第一和第二电极上的形成电压施加到电阻性非易失性存储器的操作方法来提供。 形成电压可以是被限制为小于可变电阻膜和第一电极中的一个之间的所选存储单元中包括的绝缘膜的击穿电压的电压电平。 还公开了相关的装置和材料。

公开(公告)号：US10714685B2

公开(公告)日：2020-07-14

申请号：US16529017

申请日：2019-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kyu Yang ,  Seong Geon Park ,  Dong Jun Seong ,  Dong Ho Ahn ,  Jung Moo Lee ,  Seol Choi ,  Hideki Horii

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

公开(公告)号：US10403818B2

公开(公告)日：2019-09-03

申请号：US15401474

申请日：2017-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kyu Yang ,  Seong Geon Park ,  Dong Jun Seong ,  Dong Ho Ahn ,  Jung Moo Lee ,  Seol Choi ,  Hideki Horii

IPC: G11C13/00 ,  H01L27/24 ,  H01L45/00

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

公开(公告)号：US09378811B2

公开(公告)日：2016-06-28

申请号：US14021412

申请日：2013-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunsu Ju ,  Min Kyu Yang ,  Eunmi Kim ,  Seonggeon Park ,  Ingyu Baek

IPC: G11C13/00

CPC classification number: G11C13/0002 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/76

Abstract: A method of operating a resistive non-volatile memory can be provided by applying a forming voltage across first and second electrodes of a selected memory cell in the variable resistance non-volatile memory device during an operation to the selected memory cell. The forming voltage can be a voltage level that is limited to less than a breakdown voltage of an insulation film included in selected memory cell between a variable resistance film and one of first electrode. Related devices and materials are also disclosed.

Abstract translation: 可以通过在对所选择的存储器单元的操作期间将可选择的电阻非易失性存储器件中的所选存储单元的第一和第二电极上的形成电压施加到电阻性非易失性存储器的操作方法来提供。 形成电压可以是被限制为小于可变电阻膜和第一电极中的一个之间的选定存储单元中包括的绝缘膜的击穿电压的电压电平。 还公开了相关的装置和材料。