公开(公告)号：US11245073B2

公开(公告)日：2022-02-08

申请号：US16944350

申请日：2020-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Geun Yu ,  Zhu Wu ,  Ja Bin Lee ,  Jung Moo Lee ,  Jinwoo Lee ,  Kyubong Jung

IPC: H01L45/00 ,  H01L27/24

Abstract: A switching element includes a lower barrier electrode on a substrate, a switching pattern on the lower barrier electrode, and an upper barrier electrode on the switching pattern. The lower barrier electrode includes a first lower barrier electrode layer, and a second lower barrier electrode layer interposed between the first lower barrier electrode layer and the switching pattern and whose density is different from the density of the first lower barrier electrode.

公开(公告)号：US11037988B2

公开(公告)日：2021-06-15

申请号：US16802976

申请日：2020-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Uk Kim ,  Jeong Hee Park ,  Seong Geon Park ,  Soon Oh Park ,  Jung Moo Lee

IPC: H01L27/24 ,  H01L45/00 ,  G11C7/18 ,  G11C13/00 ,  G11C8/14

Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.

公开(公告)号：US10777745B2

公开(公告)日：2020-09-15

申请号：US16364232

申请日：2019-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Geun Yu ,  Zhu Wu ,  Ja Bin Lee ,  Jung Moo Lee ,  Jinwoo Lee ,  Kyubong Jung

IPC: H01L45/00 ,  H01L27/24

Abstract: A switching element includes a lower barrier electrode on a substrate, a switching pattern on the lower barrier electrode, and an upper barrier electrode on the switching pattern. The lower barrier electrode includes a first lower barrier electrode layer, and a second lower barrier electrode layer interposed between the first lower barrier electrode layer and the switching pattern and whose density is different from the density of the first lower barrier electrode.

公开(公告)号：US10714685B2

公开(公告)日：2020-07-14

申请号：US16529017

申请日：2019-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kyu Yang ,  Seong Geon Park ,  Dong Jun Seong ,  Dong Ho Ahn ,  Jung Moo Lee ,  Seol Choi ,  Hideki Horii

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

公开(公告)号：US10403818B2

公开(公告)日：2019-09-03

申请号：US15401474

申请日：2017-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kyu Yang ,  Seong Geon Park ,  Dong Jun Seong ,  Dong Ho Ahn ,  Jung Moo Lee ,  Seol Choi ,  Hideki Horii

IPC: G11C13/00 ,  H01L27/24 ,  H01L45/00

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

公开(公告)号：US09893271B2

公开(公告)日：2018-02-13

申请号：US15210151

申请日：2016-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghwan Park ,  Jonguk Kim ,  Soonoh Park ,  Jung Moo Lee ,  Sugwoo Jung

IPC: H01L29/82 ,  H01L43/00 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: A semiconductor memory device includes a selection transistor on a semiconductor substrate, a lower contact plug connected to a drain region of the selection transistor, and a magnetic tunnel junction pattern on the lower contact plug, the magnetic tunnel junction pattern including a bottom electrode in contact with the lower contact plug, the bottom electrode being an amorphous tantalum nitride layer, a top electrode on the bottom electrode, first and second magnetic layers between the top and bottom electrodes, and a tunnel barrier layer between the first and second magnetic layers.