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公开(公告)号：US11641749B2
公开(公告)日：2023-05-02
申请号：US17325134
申请日：2021-05-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong Jun Seong , Jun Hwan Paik , Hyung Jong Jeong
Abstract: A semiconductor device includes a first electrode and a first carbon layer on the first electrode. A switch layer is disposed on the first carbon layer and a second carbon layer is disposed on the switch layer. At least one tunneling oxide layer is disposed between the first carbon layer and the second carbon layer. The device further includes a second electrode on the second carbon layer.
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公开(公告)号：US11037985B2
公开(公告)日：2021-06-15
申请号：US16378749
申请日：2019-04-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong Jun Seong , Jun Hwan Paik , Hyung Jong Jeong
Abstract: A semiconductor device includes a first electrode and a first carbon layer on the first electrode. A switch layer is disposed on the first carbon layer and a second carbon layer is disposed on the switch layer. At least one tunneling oxide layer is disposed between the first carbon layer and the second carbon layer. The device further includes a second electrode on the second carbon layer.
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公开(公告)号：US10714685B2
公开(公告)日：2020-07-14
申请号：US16529017
申请日：2019-08-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Min Kyu Yang , Seong Geon Park , Dong Jun Seong , Dong Ho Ahn , Jung Moo Lee , Seol Choi , Hideki Horii
Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.
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公开(公告)号：US10403818B2
公开(公告)日：2019-09-03
申请号：US15401474
申请日：2017-01-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Min Kyu Yang , Seong Geon Park , Dong Jun Seong , Dong Ho Ahn , Jung Moo Lee , Seol Choi , Hideki Horii
Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.
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