公开(公告)号：US20140078812A1

公开(公告)日：2014-03-20

申请号：US14021412

申请日：2013-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunsu Ju ,  Min Kyu Yang ,  Eunmi Kim ,  Seonggeon Park ,  Ingyu Baek

IPC: G11C13/00

CPC classification number: G11C13/0002 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/76

Abstract: A method of operating a resistive non-volatile memory can be provided by applying a forming voltage across first and second electrodes of a selected memory cell in the variable resistance non-volatile memory device during an operation to the selected memory cell. The forming voltage can be a voltage level that is limited to less than a breakdown voltage of an insulation film included in selected memory cell between a variable resistance film and one of first electrode. Related devices and materials are also disclosed.

Abstract translation: 可以通过在对所选择的存储器单元的操作期间将可选择的电阻非易失性存储器件中的所选存储单元的第一和第二电极上的形成电压施加到电阻性非易失性存储器的操作方法来提供。 形成电压可以是被限制为小于可变电阻膜和第一电极中的一个之间的所选存储单元中包括的绝缘膜的击穿电压的电压电平。 还公开了相关的装置和材料。

公开(公告)号：US09378811B2

公开(公告)日：2016-06-28

申请号：US14021412

申请日：2013-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunsu Ju ,  Min Kyu Yang ,  Eunmi Kim ,  Seonggeon Park ,  Ingyu Baek

IPC: G11C13/00

CPC classification number: G11C13/0002 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/76

Abstract: A method of operating a resistive non-volatile memory can be provided by applying a forming voltage across first and second electrodes of a selected memory cell in the variable resistance non-volatile memory device during an operation to the selected memory cell. The forming voltage can be a voltage level that is limited to less than a breakdown voltage of an insulation film included in selected memory cell between a variable resistance film and one of first electrode. Related devices and materials are also disclosed.

Abstract translation: 可以通过在对所选择的存储器单元的操作期间将可选择的电阻非易失性存储器件中的所选存储单元的第一和第二电极上的形成电压施加到电阻性非易失性存储器的操作方法来提供。 形成电压可以是被限制为小于可变电阻膜和第一电极中的一个之间的选定存储单元中包括的绝缘膜的击穿电压的电压电平。 还公开了相关的装置和材料。