公开(公告)号：US20190157452A1

公开(公告)日：2019-05-23

申请号：US16028083

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin Hye Kim ,  Kyung Seok Oh ,  Gu Young Cho ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L23/532

Abstract: A semiconductor device includes a substrate and a plurality of semiconductor fins protruding from the substrate. Source/drain regions are disposed at tops of respective ones of the semiconductor fins, each having a width greater than a width of individual ones of the semiconductor fins. A gate electrode is disposed on side surfaces of the semiconductor fins below the source/drain regions. Insulating layers contact the side surfaces of the semiconductor fins and cover upper surfaces of the gate electrode.

公开(公告)号：US10176791B2

公开(公告)日：2019-01-08

申请号：US15066655

申请日：2016-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Young Jeon ,  Yeon Su Kim ,  Yeong Min Kim ,  Jung Min Park ,  Kyung Seok Oh

IPC: G10H7/12 ,  G10H3/18 ,  G10H1/00 ,  G10H3/14 ,  G10H1/32 ,  G10H3/12

Abstract: An electronic device is provided. The electronic device includes an image sensor configured to sense a motion of a bow to the string instrument, a vibration sensor configured to sense a vibration generated by the string instrument, and a control module configured to determine a fingering position of a user with respect to the string instrument using the motion of the bow and the vibration.

公开(公告)号：US09537055B2

公开(公告)日：2017-01-03

申请号：US14490475

申请日：2014-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myoung Bo Park ,  Kyung Seok Oh ,  Ho Young Song

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/48

CPC classification number: H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor LED package includes a package body having first and second electrode structures and an LED chip connected to at least one of the first and second electrode structures using a wire. The LED chip includes a light emitting structure and first and second electrode parts. At least one of the first and second electrode parts includes a bonding electrode layer made of a material having the same composition as a material of the wire and bonded to the wire, and an uneven electrode layer disposed on the bonding electrode layer and having at least one through hole filled with the wire. The at least one through hole allows a top surface of the bonding electrode layer to be exposed therebelow.

Abstract translation: 半导体LED封装包括具有第一和第二电极结构的封装体和使用导线连接到第一和第二电极结构中的至少一个的LED芯片。 LED芯片包括发光结构和第一和第二电极部分。 第一电极部分和第二电极部分中的至少一个包括由与导线的材料组成相同的材料制成的接合电极层，并且接合到导线上;以及不平坦电极层，设置在接合电极层上并且至少具有 一个充满电线的通孔。 至少一个通孔允许接合电极层的顶表面暴露在其下面。

公开(公告)号：US20220310805A1

公开(公告)日：2022-09-29

申请号：US17526046

申请日：2021-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Hwan Chun ,  Seung Jae Lee ,  Jong Min Baek ,  Kyung Seok Oh ,  Woo Jin Lee

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/08 ,  H01L29/78 ,  H01L29/40

Abstract: Semiconductor devices having improved performance and reliability. For example, a semiconductor device may include a substrate, an active pattern extending in a first direction, on the substrate, a plurality of gate structures on the active pattern, each including a gate electrode that crosses the active pattern. A lower active contact may be connected to a source/drain pattern. A trench may expose the lower active contact, and a width of a bottom surface of the trench in the first direction may be greater than a width of an upper surface of the lower active contact in the first direction. An etching stop film may be along the bottom surface of the trench and side walls of the trench, and have an uppermost surface coplanar with an upper surface of an upper active contact that extends through the etching stop film and is connected to the lower active contact.

公开(公告)号：US12279449B2

公开(公告)日：2025-04-15

申请号：US17526046

申请日：2021-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Hwan Chun ,  Seung Jae Lee ,  Jong Min Baek ,  Kyung Seok Oh ,  Woo Jin Lee

IPC: H10D30/67 ,  H10D30/62 ,  H10D62/10 ,  H10D62/13 ,  H10D64/01

Abstract: Semiconductor devices having improved performance and reliability. For example, a semiconductor device may include a substrate, an active pattern extending in a first direction, on the substrate, a plurality of gate structures on the active pattern, each including a gate electrode that crosses the active pattern. A lower active contact may be connected to a source/drain pattern. A trench may expose the lower active contact, and a width of a bottom surface of the trench in the first direction may be greater than a width of an upper surface of the lower active contact in the first direction. An etching stop film may be along the bottom surface of the trench and side walls of the trench, and have an uppermost surface coplanar with an upper surface of an upper active contact that extends through the etching stop film and is connected to the lower active contact.

公开(公告)号：US10686069B2

公开(公告)日：2020-06-16

申请号：US16028083

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin Hye Kim ,  Kyung Seok Oh ,  Gu Young Cho ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/10 ,  H01L23/532 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L29/08 ,  H01L21/768

Abstract: A semiconductor device includes a substrate and a plurality of semiconductor fins protruding from the substrate. Source/drain regions are disposed at tops of respective ones of the semiconductor fins, each having a width greater than a width of individual ones of the semiconductor fins. A gate electrode is disposed on side surfaces of the semiconductor fins below the source/drain regions. Insulating layers contact the side surfaces of the semiconductor fins and cover upper surfaces of the gate electrode.