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    Semiconductor devices having upper and lower active contacts
    1.
    发明授权
    Semiconductor devices having upper and lower active contacts 有权

    公开(公告)号：US12279449B2

    公开(公告)日：2025-04-15

    申请号：US17526046

    申请日：2021-11-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Hwan Chun ,  Seung Jae Lee ,  Jong Min Baek ,  Kyung Seok Oh ,  Woo Jin Lee

    IPC: H10D30/67 ,  H10D30/62 ,  H10D62/10 ,  H10D62/13 ,  H10D64/01

    Abstract: Semiconductor devices having improved performance and reliability. For example, a semiconductor device may include a substrate, an active pattern extending in a first direction, on the substrate, a plurality of gate structures on the active pattern, each including a gate electrode that crosses the active pattern. A lower active contact may be connected to a source/drain pattern. A trench may expose the lower active contact, and a width of a bottom surface of the trench in the first direction may be greater than a width of an upper surface of the lower active contact in the first direction. An etching stop film may be along the bottom surface of the trench and side walls of the trench, and have an uppermost surface coplanar with an upper surface of an upper active contact that extends through the etching stop film and is connected to the lower active contact.

    SEMICONDUCTOR DEVICES
    2.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20230083747A1

    公开(公告)日：2023-03-16

    申请号：US17931873

    申请日：2022-09-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ja Yeong Heo ,  Yeong Gil Kim ,  Woo Jin Lee

    IPC: H01L23/532 ,  H01L23/522 ,  H01L23/528

    Abstract: A semiconductor device is provided. A semiconductor device includes: a lower metal layer including first, second, and third conductive patterns spaced apart from each other in a first insulating film; first and second interlayer insulating films between the first and second conductive patterns and between the second and third conductive patterns, respectively, so as to be spaced apart from each other; a via metal layer inside a recess on the lower metal layer and electrically connected to the lower metal layer; and a second insulating film at least partially surrounding side surfaces of the via metal layer and having a first insulating film portion on a concave portion between the first and second interlayer insulating films and a second insulating film portion on the first insulating film portion, wherein a carbon concentration in the first insulating film portion is higher than a carbon concentration in the second insulating film portion.

    Semiconductor device with air gaps in interlayer insulating layer and method of manufacturing the same
    3.
    发明授权
    Semiconductor device with air gaps in interlayer insulating layer and method of manufacturing the same 有权

    公开(公告)号：US10896870B2

    公开(公告)日：2021-01-19

    申请号：US16181739

    申请日：2018-11-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae Hong Park ,  Woo Jin Lee

    IPC: H01L21/768 ,  H01L23/522 ,  H01L21/311 ,  H01L23/532

    Abstract: A semiconductor device includes an interlayer insulating layer disposed on a substrate, a first metal wiring and a second metal wiring disposed in the interlayer insulating layer, the first and second wirings spaced apart from each other in a first direction, the first and second wirings extending to a second direction perpendicular to the first direction, an air gap formed in the interlayer insulating layer between the first metal wiring and the second metal wiring, and spaced apart from a sidewall of the first metal wiring and a sidewall of the second metal wiring, and a capping layer disposed on the interlayer insulating layer, the capping layer covering the first metal wiring, the second metal wiring, and the air gap, wherein the air gap is disposed at a first distance from the first metal wiring in the first direction and at a second distance from the second metal wiring in the first direction, and wherein the first and second distances are the same.

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