公开(公告)号：US20190136368A1

公开(公告)日：2019-05-09

申请号：US15980348

申请日：2018-05-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Woong KIM ,  Woojin KIM ,  Sang Hwan PARK ,  Heeju SHIN ,  Se Chung OH

IPC: C23C14/35 ,  H01L43/10 ,  H01L43/12 ,  C23C14/34 ,  H01J37/34

Abstract: Provided are sputtering apparatuses and methods of manufacturing magnetic memory devices. The sputtering apparatus includes a process chamber, a stage in the process chamber and configured to load a substrate thereon, and a first sputter gun above the substrate in the process chamber. The first sputter gun is horizontally spaced apart from the substrate. The first sputter gun includes a first target including a first end and a second end, the first end being horizontally closer to the substrate than the second end. A first surface of the first target is inclined relative to a top surface of the substrate. A height of the second end of the first target relative to the top surface of the substrate is greater than that of the first end of the first target.

公开(公告)号：US20200152251A1

公开(公告)日：2020-05-14

申请号：US16552110

申请日：2019-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Woong KIM ,  Juhyun KIM ,  Se Chung OH ,  Ung Hwan PI

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory device includes a first conductive line extending in a first direction on a substrate, a first magnetic pattern on the first conductive line, the first magnetic pattern including a first portion and a second portion that have different thicknesses, and a second conductive line on the first magnetic pattern and extending in a second direction intersecting the first direction.

公开(公告)号：US20220235450A1

公开(公告)日：2022-07-28

申请号：US17721428

申请日：2022-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Woong KIM ,  Hyeon Woo SEO ,  Hee Ju SHIN ,  Se Chung OH ,  Hyun CHO

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  C23C14/08

Abstract: A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.

公开(公告)号：US20220020409A1

公开(公告)日：2022-01-20

申请号：US17202648

申请日：2021-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee Ju SHIN ,  Sang Hwan PARK ,  Se Chung OH ,  Ki Woong KIM ,  Hyeon Woo SEO

IPC: G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetic memory device includes a pinned layer, a free layer, a tunnel barrier layer between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, and a second oxide layer spaced apart from the free layer with the first oxide layer therebetween. The first oxide layer includes an oxide of a first material and may have a thickness of 0.3 Å to 2.0 Å. The second oxide layer may include an oxide of a second material and may have a thickness of 0.1 Å to 5.0 Å. A first oxygen affinity of the first material may be greater than a second oxygen affinity of the second material.

公开(公告)号：US20170237901A1

公开(公告)日：2017-08-17

申请号：US15431210

申请日：2017-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Si Hyoung LEE ,  Jae Hyun KIM ,  In Sun SONG ,  Hoo Hyoung LEE ,  Ji Hwan CHOE ,  Ki Woong KIM ,  Dong Jun SEO

IPC: H04N5/232 ,  H04N7/01 ,  H04N5/04 ,  G06T7/20

CPC classification number: H04N5/23238 ,  G06T7/33 ,  G06T2207/10016 ,  H04N5/04 ,  H04N5/23258 ,  H04N5/23293 ,  H04N7/0127

Abstract: An electronic device and a method of operating a panorama function in the electronic device are provided. The electronic device includes at least one processor, a memory, a camera configured to sequentially obtain a plurality of images if an image capture is started, and a sensor configured to sense motion of the electronic device. The at least one processor is configured to store in the memory a panorama content file comprising panorama image data and dynamic panorama data generated based on the plurality of images and the motion of the electronic device sensed during the image capture.

公开(公告)号：US20170194555A1

公开(公告)日：2017-07-06

申请号：US15466802

申请日：2017-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung LEE ,  Kwangseok KIM ,  Ki Woong KIM ,  Whankyun KIM ,  Sang Hwan PARK

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory device includes a reference magnetic pattern having a magnetization direction fixed in one direction, a free magnetic pattern having a changeable magnetization direction, and a tunnel barrier pattern disposed between the free and reference magnetic patterns. The free magnetic pattern has a first surface being in contact with the tunnel barrier pattern and a second surface opposite to the first surface. The magnetic memory device further includes a sub-oxide pattern disposed on the second surface of the free magnetic pattern, and a metal boride pattern disposed between the sub-oxide pattern and the second surface of the free magnetic pattern. The magnetization directions of the free and reference magnetic patterns are substantially perpendicular to the first surface of the free magnetic pattern.