公开(公告)号：US20210020695A1

公开(公告)日：2021-01-21

申请号：US16789546

申请日：2020-02-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghoon BAK ,  Woojin KIM ,  Junghwan MOON ,  Seowon LEE ,  Nayoung JI

IPC: H01L27/24 ,  H01L27/22 ,  G11C13/00

Abstract: A variable resistance memory device includes a first conductive line, a bipolar selection device on the first conductive line and electrically connected to the first conductive line, a second conductive line on the first conductive line and electrically connected to the bipolar selection device, a variable resistance layer on the second conductive line and electrically connected to the second conductive line, and a third conductive line on the variable resistance layer and electrically connected to the variable resistance layer.

公开(公告)号：US20210050508A1

公开(公告)日：2021-02-18

申请号：US16829216

申请日：2020-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seowon LEE ,  Junghwan MOON ,  Junghoon BAK ,  Woojin KIM ,  Hyeongsun HONG

IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01F10/32

Abstract: A magnetic memory device includes a device isolation layer on a substrate and defining an active region, a source region and a drain region apart from each other in the active region of the substrate, a channel portion in the active region of the substrate and between the source region and the drain region, a spin orbit torque (SOT)-inducing layer on the channel portion of the substrate, a magnetic tunnel junction (MTJ) structure on the SOT-inducing layer, the MTJ structure including a free layer on the SOT-inducing layer, a tunnel barrier layer on the free layer, and a pinned layer on the tunnel barrier, a word line on the MTJ structure, a source line electrically connected to the source region, and a bit line electrically connected to the drain region.

公开(公告)号：US20220350256A1

公开(公告)日：2022-11-03

申请号：US17672937

申请日：2022-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghoon LEE ,  Maenghyo CHO ,  Changyoung JEONG ,  Muyoung KIM ,  Junghwan MOON ,  Sungwoo PARK ,  Hyungwoo LEE

IPC: G03F7/20 ,  G03F7/40 ,  H01L21/027 ,  G05B19/4099 ,  G06F30/25

Abstract: A lithography method using a multiscale simulation includes estimating a shape of a virtual resist pattern for a selected resist based on a multiscale simulation; forming a test resist pattern by performing an exposure process on a layer formed of the selected resist; determining whether an error range between the test resist pattern and the virtual resist pattern is in an allowable range; and forming a resist pattern on a patterning object using the selected resist when the error range is in the allowable range. The multiscale simulation may use molecular scale simulation, quantum scale simulation, and a continuum scale simulation, and may model a unit lattice cell of the resist by mixing polymer chains, a photo-acid generator (PAG), and a quencher.

公开(公告)号：US20240204737A1

公开(公告)日：2024-06-20

申请号：US18380460

申请日：2023-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghwan MOON ,  Youngyoon Woo ,  Minsik Jun

IPC: H03F3/24 ,  H03F1/32 ,  H04B1/04

CPC classification number: H03F3/245 ,  H03F1/3241 ,  H04B1/0475 ,  H03F2200/451 ,  H04B2001/0425

Abstract: An electronic device may include: a processor; a power amplifier; a power supply configured to supply power to the power amplifier; a crest factor reduction (CFR) module; and a digital predistortion (DPD) module, wherein the processor is configured to: transmit a first radio frequency (RF) signal, based on a first state of each of the CFR module, the DPD module, and the power supply, in a first transmission interval, the first RF signal being generated from a first baseband signal; identify voltage information of a second RF signal associated with a second transmission interval after the first transmission interval; change a state of each of the CFR module, the DPD module, and the power supply from the first state to a second state, based on the voltage information, in a first reception interval between the first transmission interval and the second transmission interval; and transmit the second RF signal generated from a second baseband signal based on the second state of each of the CFR module, the DPD module, and the power supply, in the second transmission interval.