公开(公告)号：US20170092767A1

公开(公告)日：2017-03-30

申请号：US15379190

申请日：2016-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keum Seok PARK ,  Jungho YOO ,  Jinyeong JOE ,  Bonyoung KOO ,  Dongsuk SHIN ,  Hongsik YOON ,  Byeongchan LEE

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/02 ,  H01L29/08 ,  H01L29/66 ,  H01L29/165 ,  H01L29/45

CPC classification number: H01L29/7848 ,  H01L21/02532 ,  H01L21/02636 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the first epitaxial pattern. The first epitaxial pattern comprises a material having a lattice constant which is the same as that of the substrate, and the second epitaxial pattern comprises a material having a lattice constant greater than that of the first epitaxial pattern.