公开(公告)号：US11121148B2

公开(公告)日：2021-09-14

申请号：US16912894

申请日：2020-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang Min Kim ,  Jin Hyuk Kim ,  Jung Tae Sung ,  Joong Shik Shin ,  Sung Hyung Lee

IPC: H01L27/11578 ,  H01L29/06 ,  H01L29/08 ,  G11C7/18

Abstract: A semiconductor device includes a first substrate including a cell region and surrounded by an extension region, a common source plate on the first substrate, a supporter on the common source plate, a first stack structure on the supporter and including an alternately stacked first insulating film and first gate electrode, a channel hole penetrating the first stack structure, the supporter, and the common source plate on the cell region, and an electrode isolation trench spaced apart from the channel hole in a first direction on the cell region, extending in a second direction, and penetrating the first stack structure, the supporter, and the common source plate, wherein a first thickness of the supporter in a first region adjacent to the electrode isolation trench is greater than a second thickness of the supporter in a second region formed between the electrode isolation trench and the channel hole.

公开(公告)号：US10916563B2

公开(公告)日：2021-02-09

申请号：US16453094

申请日：2019-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Woo Kim ,  Joon Young Kwon ,  Jung Hwan Lee ,  Jung Tae Sung ,  Ji Min Shin

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157

Abstract: A semiconductor device includes a substrate having a cell region and an extension region, channel structures disposed in the cell region and extending in a first direction substantially perpendicular to an upper surface of the substrate, gate electrode layers surrounding the channel structures and stacked to be spaced apart from each other in the first direction and to extend in a second direction substantially perpendicular to the first direction, and word line cuts cutting the gate electrode layers in the first direction and continuously extending in the second direction. At least one of the word line cuts is an extension word line cut with an extension portion having an area that is different from those of the remaining word line cuts located at the same level as the at least one word line cut in a predetermined region extending in the second direction.

公开(公告)号：US20230371255A1

公开(公告)日：2023-11-16

申请号：US18152211

申请日：2023-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： MOO RYM CHOI ,  Jung Tae Sung ,  Yun Sun Jang

IPC: H10B43/27 ,  H10B80/00

CPC classification number: H10B43/27 ,  H10B80/00

Abstract: Provided are a memory device, a method of fabricating the same, and an electronic system including the same. The memory device includes a peripheral circuit structure and a cell structure on the peripheral circuit structure. The cell structure comprises a cell substrate including a first surface facing the peripheral circuit structure and a second surface opposite to the first surface and having a first conductivity type, gate electrodes on the first surface of the cell substrate, a channel structure intersecting the gate electrodes and connected to the cell substrate, a first impurity region that is in the cell substrate adjacent to the second surface and has a second conductivity type, and a second impurity region that is in the cell substrate and is spaced apart from the first impurity region, the second impurity region having the first conductivity type with a higher impurity concentration than that of the cell substrate.

公开(公告)号：US11723200B2

公开(公告)日：2023-08-08

申请号：US17399239

申请日：2021-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang Min Kim ,  Jin Hyuk Kim ,  Jung Tae Sung ,  Joong Shik Shin ,  Sung Hyung Lee

IPC: H10B43/20 ,  H01L29/06 ,  H01L29/08 ,  G11C7/18

CPC classification number: H10B43/20 ,  G11C7/18 ,  H01L29/0649 ,  H01L29/0847

Abstract: A semiconductor device includes a first substrate including a cell region and surrounded by an extension region, a common source plate on the first substrate, a supporter on the common source plate, a first stack structure on the supporter and including an alternately stacked first insulating film and first gate electrode, a channel hole penetrating the first stack structure, the supporter, and the common source plate on the cell region, and an electrode isolation trench spaced apart from the channel hole in a first direction on the cell region, extending in a second direction, and penetrating the first stack structure, the supporter, and the common source plate, wherein a first thickness of the supporter in a first region adjacent to the electrode isolation trench is greater than a second thickness of the supporter in a second region formed between the electrode isolation trench and the channel hole.