公开(公告)号：US11121148B2

公开(公告)日：2021-09-14

申请号：US16912894

申请日：2020-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang Min Kim ,  Jin Hyuk Kim ,  Jung Tae Sung ,  Joong Shik Shin ,  Sung Hyung Lee

IPC: H01L27/11578 ,  H01L29/06 ,  H01L29/08 ,  G11C7/18

Abstract: A semiconductor device includes a first substrate including a cell region and surrounded by an extension region, a common source plate on the first substrate, a supporter on the common source plate, a first stack structure on the supporter and including an alternately stacked first insulating film and first gate electrode, a channel hole penetrating the first stack structure, the supporter, and the common source plate on the cell region, and an electrode isolation trench spaced apart from the channel hole in a first direction on the cell region, extending in a second direction, and penetrating the first stack structure, the supporter, and the common source plate, wherein a first thickness of the supporter in a first region adjacent to the electrode isolation trench is greater than a second thickness of the supporter in a second region formed between the electrode isolation trench and the channel hole.

公开(公告)号：US09778849B2

公开(公告)日：2017-10-03

申请号：US14659685

申请日：2015-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho Suk Yum ,  Jin Wan Jun ,  Chong Hyun Lee ,  Dong Hyuk Ihm ,  Jin Hyuk Kim

IPC: G06F12/00 ,  G06F3/06 ,  G06F12/02

CPC classification number: G06F3/061 ,  G06F3/0611 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0673 ,  G06F3/0679 ,  G06F12/00 ,  G06F12/0246 ,  G06F2212/1024

Abstract: A method of operating a data storage device is provided. Size information of write data and write speed information is received from a host. A first write area is determined to store the write data based on the size information and the write speed information. The write data is received from the host. The write data is written to the first write area using at least one method selected among a plurality of write methods according to the write speed information.

公开(公告)号：US11723200B2

公开(公告)日：2023-08-08

申请号：US17399239

申请日：2021-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang Min Kim ,  Jin Hyuk Kim ,  Jung Tae Sung ,  Joong Shik Shin ,  Sung Hyung Lee

IPC: H10B43/20 ,  H01L29/06 ,  H01L29/08 ,  G11C7/18

CPC classification number: H10B43/20 ,  G11C7/18 ,  H01L29/0649 ,  H01L29/0847

Abstract: A semiconductor device includes a first substrate including a cell region and surrounded by an extension region, a common source plate on the first substrate, a supporter on the common source plate, a first stack structure on the supporter and including an alternately stacked first insulating film and first gate electrode, a channel hole penetrating the first stack structure, the supporter, and the common source plate on the cell region, and an electrode isolation trench spaced apart from the channel hole in a first direction on the cell region, extending in a second direction, and penetrating the first stack structure, the supporter, and the common source plate, wherein a first thickness of the supporter in a first region adjacent to the electrode isolation trench is greater than a second thickness of the supporter in a second region formed between the electrode isolation trench and the channel hole.