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    Image sensor
    1.
    发明授权
    Image sensor 有权

    公开(公告)号：US10964740B2

    公开(公告)日：2021-03-30

    申请号：US16407870

    申请日：2019-05-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jinyong Choi ,  Haemin Lim ,  Joosung Moon ,  Ingyu Baek ,  Seunghan Yoo ,  Minjung Chung

    IPC: H01L27/146

    Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a photoelectric conversion layer in the semiconductor substrate, transistors on the first surface of the semiconductor substrate, a first interlayer insulation layer on the transistors, a first lower pad electrode and a second lower pad electrode spaced apart from the first lower pad electrode on the first interlayer insulation layer, a mold insulation layer on the first and second lower pad electrodes, first and second lower electrodes in the mold insulation layer, a dielectric layer on the first and second lower electrodes, an upper electrode on the dielectric layer, and an upper pad electrode connected to the upper electrode and including a different conductive material from the first and second lower pad electrodes. The first lower electrodes are on the first lower pad electrode, and the second lower electrodes are on the second lower pad electrode.

    Image sensor
    4.
    发明授权
    Image sensor 有权

    公开(公告)号：US11665452B2

    公开(公告)日：2023-05-30

    申请号：US16743222

    申请日：2020-01-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ingyu Baek ,  Hyunchul Kim ,  Jinyong Choi

    IPC: H01L27/00 ,  H04N25/771 ,  H01L49/02 ,  H01L27/146 ,  H04N25/75

    CPC classification number: H04N25/771 ,  H01L27/1463 ,  H01L27/14609 ,  H01L27/14636 ,  H01L28/60 ,  H04N25/75

    Abstract: An image sensor is provided and includes a photoelectric conversion layer, an integrated circuit layer, and a charge storage layer. The photoelectric conversion layer includes a pixel separation structure defining pixel regions, each including a photoelectric conversion region. The integrated circuit layer read charges from the photoelectric conversion regions. The charge storage layer includes a stacked capacitor for each of the pixel regions. The stacked capacitor includes a lower pad electrode, an intermediate pad electrode, an upper pad electrode, a contact plug connecting the upper pad electrode to the lower pad electrode, a first lower capacitor structure connected between the lower pad electrode and the intermediate pad electrode, and an upper capacitor structure connected between the intermediate pad electrode and the upper pad electrode. The upper capacitor structure is stacked on the lower capacitor structure to partially overlap the lower capacitor structure when viewed in plan view.

    SEMICONDUCTOR WAFER AND OPERATING METHOD OF TEST CIRCUIT OF SEMICONDUCTOR WAFER
    5.
    发明申请
    SEMICONDUCTOR WAFER AND OPERATING METHOD OF TEST CIRCUIT OF SEMICONDUCTOR WAFER 有权

    公开(公告)号：US20250069961A1

    公开(公告)日：2025-02-27

    申请号：US18800813

    申请日：2024-08-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jinyong Choi ,  Sooyeol Yang ,  Jaeeun Lee ,  Hyuckjoon Kwon ,  Jinwon Choi ,  Takuya Futatsuyama

    IPC: H01L21/66 ,  G01R31/28

    Abstract: A semiconductor multi-layer structure includes a first semiconductor wafer including a plurality of first pads, a second semiconductor wafer including a plurality of second pads combined with the plurality of first pads, and a test circuit configured to apply a first voltage to a reference combination portion in which a preset first reference pad among the plurality of first pads is combined with a preset second reference pad among the plurality of second pads and apply a second voltage to a comparison combination portion in which at least one first pad among the plurality of first pads is combined with at least one second pad among the plurality of second pads, wherein the test circuit compares a voltage distributed based on a resistance ratio of the reference combination portion to the comparison combination portion with a preset reference voltage to determine whether the at least one first pad is aligned with the at least one second pad.

    IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME
    6.
    发明公开
    IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240258354A1

    公开(公告)日：2024-08-01

    申请号：US18242597

    申请日：2023-09-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jungsan Kim ,  Kwansik Kim ,  Jinyong Choi ,  Gayoung Kim ,  Taemin Kim ,  Yongsoon Park ,  Ingyu Baek ,  Seungho Lee

    IPC: H01L27/146

    CPC classification number: H01L27/14632 ,  H01L27/14603 ,  H01L27/14645

    Abstract: An image sensor includes a lower insulating film arranged over a substrate and having a non-flat surface that has a concave-convex shape and includes a first surface, which extends in a horizontal direction parallel to a frontside surface of the substrate, and at least one second surface extending from the first surface toward the substrate, a capacitor arranged on the lower insulating film to contact the non-flat surface of the lower insulating film and conformally covering the non-flat surface of the lower insulating film along the contour of the non-flat surface of the lower insulating film, an upper insulating film covering the capacitor and the lower insulating film, and at least one air gap having a side facing the at least one second surface of the lower insulating film in the horizontal direction and having a height defined by the upper insulating film in a vertical direction.

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