公开(公告)号：US11829224B2

公开(公告)日：2023-11-28

申请号：US17742175

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongyeon Park ,  Youngjae Park ,  Hyungjin Kim ,  Reum Oh ,  Jinyong Choi

IPC: G06F1/00 ,  G06F1/3225 ,  G06F1/3296 ,  G06F1/3234 ,  G06F1/3203

CPC classification number: G06F1/3225 ,  G06F1/3275 ,  G06F1/3296 ,  G06F1/3203

Abstract: In a method of operating a memory device, a first command to allow the memory device to enter an idle mode is received. A reference time interval is adjusted based on process, voltage and temperature (PVT) variation associated with the memory device. The reference time interval is used to determine a start time point of a power control operation for reducing power consumption of the memory device. A first time interval during which the idle mode is maintained is internally measured based on the first command. The power control operation is performed in response to the first time interval being longer than the reference time interval.