公开(公告)号：US09748453B2

公开(公告)日：2017-08-29

申请号：US15146372

申请日：2016-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hak Kim ,  Tan Sakong ,  Eun Deok Sim ,  Jeong Wook Lee ,  Jin Young Lim ,  Byoung Kyun Kim

IPC: H01L33/00 ,  H01L33/58 ,  H01L33/22 ,  H01L33/32

CPC classification number: H01L33/58 ,  H01L33/007 ,  H01L33/22 ,  H01L33/32 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2933/0083 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.

公开(公告)号：US11973081B2

公开(公告)日：2024-04-30

申请号：US17561887

申请日：2021-12-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon Gyu You ,  In Gyum Kim ,  Gi Young Yang ,  Ji Su Yu ,  Jin Young Lim ,  Hak Chul Jung

IPC: H01L27/118 ,  H01L27/02

CPC classification number: H01L27/11807 ,  H01L27/0207 ,  H01L2027/11812 ,  H01L2027/1182 ,  H01L2027/11866 ,  H01L2027/11875 ,  H01L2027/11881 ,  H01L2027/11887

Abstract: An integrated circuit includes a first standard cell including a first first-type transistor, a first second-type transistor, a third second-type transistor, and a third first-type transistor, a second standard cell including a second first-type transistor, a second second-type transistor, a fourth second-type transistor and a fourth first-type transistor, a plurality of wiring layers which are disposed on the first and second standard cells and includes a first wiring layer, a second wiring layer, and a third wiring layer sequentially stacked. A source contact of the first first-type transistor and a source contact of the second first-type transistor are electrically connected through a first power rail of the plurality of wiring layers, and a source contact of the third first-type transistor and a source contact of the fourth first-type transistor are electrically connected through a second power rail of the plurality of wiring layers.

公开(公告)号：US20230343788A1

公开(公告)日：2023-10-26

申请号：US18344794

申请日：2023-06-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gi Young Yang ,  Hyeon Gyu You ,  Ga Room Kim ,  Jin Young Lim ,  In Gyum Kim ,  Hak Chul Jung

IPC: H01L27/118 ,  G06F30/392 ,  H01L27/02 ,  G11C5/06 ,  H01L23/528 ,  G11C11/412

CPC classification number: H01L27/11807 ,  G06F30/392 ,  H01L27/0207 ,  G11C5/06 ,  H01L23/528 ,  G11C11/412

Abstract: An integrated circuit including a first active region and a second active region extending in a first direction and spaced apart from each other in a second direction intersecting the first direction; a power rail and a ground rail extending in the first direction and spaced apart from the first and second active regions and each other in the second direction; source/drain contacts extending in the second direction on at least a portion of the first or second active region, gate structures extending in the second direction and on at least a portion of the first and second active regions, a power rail configured to supply power through source/drain contact vias, and a ground rail configured to supply a ground voltage through source/drain contact vias.

公开(公告)号：US08716694B2

公开(公告)日：2014-05-06

申请号：US13707027

申请日：2012-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon Han ,  Jeong Wook Lee ,  Jae Sung Hyun ,  Jin Young Lim ,  Dong Joon Kim ,  Young Sun Kim

IPC: H01L33/32 ,  H01L33/06

CPC classification number: H01L33/0025 ,  H01L33/06 ,  H01L33/32

Abstract: A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlxInyGa1-x-yN (0≦x

Abstract translation: 半导体发光器件包括：n型和p型半导体层; 以及设置在n型和p型半导体层之间的有源层。 有源层具有多个量子阱层和多个量子势垒层交替设置的结构，其中多个量子阱层由Al x In y Ga 1-x-y N（0＆nlE; x <1,0

公开(公告)号：US11735592B2

公开(公告)日：2023-08-22

申请号：US17029475

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gi Young Yang ,  Hyeon Gyu You ,  Ga Room Kim ,  Jin Young Lim ,  In Gyum Kim ,  Hak Chul Jung

IPC: H01L23/52 ,  H01L27/118 ,  G06F30/392 ,  H01L27/02 ,  G11C5/06 ,  H01L23/528 ,  G11C11/412

CPC classification number: H01L27/11807 ,  G06F30/392 ,  G11C5/06 ,  G11C11/412 ,  H01L23/528 ,  H01L27/0207

Abstract: An integrated circuit including a first active region and a second active region extending in a first direction and spaced apart from each other in a second direction intersecting the first direction; a power rail and a ground rail extending in the first direction and spaced apart from the first and second active regions and each other in the second direction; source/drain contacts extending in the second direction on at least a portion of the first or second active region, gate structures extending in the second direction and on at least a portion of the first and second active regions, a power rail configured to supply power through source/drain contact vias, and a ground rail configured to supply a ground voltage through source/drain contact vias.

公开(公告)号：US11244961B2

公开(公告)日：2022-02-08

申请号：US16888677

申请日：2020-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon Gyu You ,  In Gyum Kim ,  Gi Young Yang ,  Ji Su Yu ,  Jin Young Lim ,  Hak Chul Jung

IPC: H01L27/118 ,  H01L27/02

Abstract: An integrated circuit includes a first standard cell including a first first-type transistor, a first second-type transistor, a third second-type transistor, and a third first-type transistor, a second standard cell including a second first-type transistor, a second second-type transistor, a fourth second-type transistor and a fourth first-type transistor, a plurality of wiring layers which are disposed on the first and second standard cells and includes a first wiring layer, a second wiring layer, and a third wiring layer sequentially stacked. A source contact of the first first-type transistor and a source contact of the second first-type transistor are electrically connected through a first power rail of the plurality of wiring layers, and a source contact of the third first-type transistor and a source contact of the fourth first-type transistor are electrically connected through a second power rail of the plurality of wiring layers.

公开(公告)号：US08748866B2

公开(公告)日：2014-06-10

申请号：US13733586

申请日：2013-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Hyun Lee ,  Sang Heon Han ,  Jin Young Lim ,  Young Sun Kim

IPC: H01L29/06 ,  H01L31/00

CPC classification number: H01L33/06 ,  H01L33/14 ,  H01L33/32

Abstract: A nitride semiconductor light emitting device includes first and second type nitride semiconductor layers. An active layer is disposed between the first and second type nitride semiconductor layers. A current spreading layer is disposed between the second type nitride semiconductor layer and the active layer. The current spreading layer includes first nitride thin films and second nitride thin films which are alternately laminated. The first nitride thin films have band gaps larger than those of the second nitride thin films. A first plurality of first nitride thin films are positioned at outer first and second sides of the current spreading layer. The first plurality of first nitride thin films have a thickness greater than that of a second plurality of first nitride thin films positioned between the first plurality of first nitride thin films.

Abstract translation: 氮化物半导体发光器件包括第一和第二氮化物半导体层。 有源层设置在第一和第二氮化物半导体层之间。 电流扩散层设置在第二氮化物半导体层和有源层之间。 电流扩散层包括交替层叠的第一氮化物薄膜和第二氮化物薄膜。 第一氮化物薄膜具有比第二氮化物薄膜大的带隙。 第一多个第一氮化物薄膜位于电流扩展层的外部第一和第二侧。 第一多个第一氮化物薄膜的厚度大于位于第一多个第一氮化物薄膜之间的第二多个第一氮化物薄膜的厚度。

公开(公告)号：US20130146840A1

公开(公告)日：2013-06-13

申请号：US13707027

申请日：2012-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Heon Han ,  Jeong Wook Lee ,  Jae Sung Hyun ,  Jin Young Lim ,  Dong Joon Kim ,  Young Sun Kim

IPC: H01L33/00

CPC classification number: H01L33/0025 ,  H01L33/06 ,  H01L33/32

Abstract: A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlxInyGa1-x-yN (0≦x

Abstract translation: 半导体发光器件包括：n型和p型半导体层; 以及设置在n型和p型半导体层之间的有源层。 有源层具有多个量子阱层和多个量子势垒层交替设置的结构，其中多个量子阱层由Al x In y Ga 1-x-y N（0 @ x <1,0