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公开(公告)号：US09362447B2
公开(公告)日：2016-06-07
申请号：US14508784
申请日：2014-10-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong Hyun Lee , Sang Heon Han , Suk Ho Yoon , Jae Sung Hyun
CPC classification number: H01L33/04 , H01L29/15 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/14 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/8592 , H01S5/20 , H01S5/34 , H01L2924/00014
Abstract: There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer.
Abstract translation: 提供了一种半导体发光器件。 该器件包括n型半导体层和p型半导体层。 p型半导体层包括多个第一层和第二层，每层包含p型杂质并且交替地层叠。 多个第一层的杂质浓度在远离n型半导体层的方向上增加。 在n型半导体层和p型半导体层之间设置有源层。
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公开(公告)号：US08716694B2
公开(公告)日：2014-05-06
申请号：US13707027
申请日：2012-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang Heon Han , Jeong Wook Lee , Jae Sung Hyun , Jin Young Lim , Dong Joon Kim , Young Sun Kim
CPC classification number: H01L33/0025 , H01L33/06 , H01L33/32
Abstract: A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlxInyGa1-x-yN (0≦x
Abstract translation: 半导体发光器件包括：n型和p型半导体层; 以及设置在n型和p型半导体层之间的有源层。 有源层具有多个量子阱层和多个量子势垒层交替设置的结构，其中多个量子阱层由Al x In y Ga 1-x-y N（0＆nlE; x <1,0
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公开(公告)号：US08748866B2
公开(公告)日：2014-06-10
申请号：US13733586
申请日：2013-01-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jong Hyun Lee , Sang Heon Han , Jin Young Lim , Young Sun Kim
Abstract: A nitride semiconductor light emitting device includes first and second type nitride semiconductor layers. An active layer is disposed between the first and second type nitride semiconductor layers. A current spreading layer is disposed between the second type nitride semiconductor layer and the active layer. The current spreading layer includes first nitride thin films and second nitride thin films which are alternately laminated. The first nitride thin films have band gaps larger than those of the second nitride thin films. A first plurality of first nitride thin films are positioned at outer first and second sides of the current spreading layer. The first plurality of first nitride thin films have a thickness greater than that of a second plurality of first nitride thin films positioned between the first plurality of first nitride thin films.
Abstract translation: 氮化物半导体发光器件包括第一和第二氮化物半导体层。 有源层设置在第一和第二氮化物半导体层之间。 电流扩散层设置在第二氮化物半导体层和有源层之间。 电流扩散层包括交替层叠的第一氮化物薄膜和第二氮化物薄膜。 第一氮化物薄膜具有比第二氮化物薄膜大的带隙。 第一多个第一氮化物薄膜位于电流扩展层的外部第一和第二侧。 第一多个第一氮化物薄膜的厚度大于位于第一多个第一氮化物薄膜之间的第二多个第一氮化物薄膜的厚度。
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Patent Agency Ranking
公开(公告)号：US20130146840A1
公开(公告)日：2013-06-13
申请号：US13707027
申请日：2012-12-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Heon Han , Jeong Wook Lee , Jae Sung Hyun , Jin Young Lim , Dong Joon Kim , Young Sun Kim
IPC: H01L33/00
CPC classification number: H01L33/0025 , H01L33/06 , H01L33/32
Abstract: A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlxInyGa1-x-yN (0≦x
Abstract translation: 半导体发光器件包括：n型和p型半导体层; 以及设置在n型和p型半导体层之间的有源层。 有源层具有多个量子阱层和多个量子势垒层交替设置的结构，其中多个量子阱层由Al x In y Ga 1-x-y N（0 @ x <1,0
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公开(公告)号：US10304990B2
公开(公告)日：2019-05-28
申请号：US15341259
申请日：2016-11-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang Heon Han , Dong Yul Lee , Seung Hyun Kim , Jang Mi Kim , Suk Ho Yoon , Sang Jun Lee
Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.
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6.发明授权Method of manufacturing semiconductor device and method of maintaining deposition apparatus 有权制造半导体器件的方法和保持沉积设备的方法公开(公告)号：US09564316B2
公开(公告)日：2017-02-07
申请号：US14578940
申请日：2014-12-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong Yul Lee , Sang Heon Han , Seung Hyun Kim , Jang Mi Kim , William Solari , Hyun Wook Shim , Suk Ho Yoon
CPC classification number: H01L21/0254 , C23C16/34 , C23C16/4404 , H01L21/02107 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02496 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007
Abstract: A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.
Abstract translation: 一种制造半导体器件的方法包括通过向处理室提供铝（Al）源，与处理室中的铝源接触的表面，在处理室的表面上形成铝化合物膜; 在形成铝化合物膜之后，在设置在处理室中的基座上设置晶片; 并在晶片上形成用于半导体器件的薄膜。
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公开(公告)号：US09502605B2
公开(公告)日：2016-11-22
申请号：US14714223
申请日：2015-05-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang Heon Han , Dong Yul Lee , Seung Hyun Kim , Jang Mi Kim , Suk Ho Yoon , Sang Jun Lee
CPC classification number: H01L33/0075 , H01L33/0025 , H01L33/007 , H01L33/06 , H01L33/145 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.
Abstract translation: 一种制造半导体发光器件的方法包括：形成第一导电型半导体层，通过在第一导电型半导体层上交替地形成多个量子阱层和多个量子势垒层来形成有源层，并形成第二导电型半导体层 导电型半导体层。 多个量子势垒层包括与第一导电类型半导体层相邻的至少一个第一量子势垒层和与第二导电类型半导体层相邻的至少一个第二量子势垒层。 活性层的形成包括允许至少一个第一量子势垒层在第一温度下生长并允许至少一个第二量子势垒层在低于第一温度的第二温度下生长。
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公开(公告)号：US09018618B1
公开(公告)日：2015-04-28
申请号：US14526274
申请日：2014-10-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jong Hyun Lee , Ki Ho Park , Suk Ho Yoon , Sang Heon Han , Jae Sung Hyun
CPC classification number: H01L33/06 , H01L33/32 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/8592 , H01S5/0224 , H01S5/042 , H01S5/3408 , H01S5/34333 , H01L2924/00014
Abstract: There is provided a semiconductor light emitting device including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, and including a plurality of alternately stacked quantum barrier layers and quantum well layers, wherein at least a portion of the plurality of quantum well layers has different thicknesses, wherein a thickness of a first quantum well layer most adjacent to the p-type semiconductor layer is less than a thickness of a second quantum well layer adjacent thereto and greater than a thickness of a third quantum well layer, other than the first and second quantum well layers.
Abstract translation: 提供一种半导体发光器件，包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的有源层，并且包括多个交替层叠的量子势垒层和量子阱层，其中所述多个量子阱层的至少一部分具有不同的厚度 其中与p型半导体层最相邻的第一量子阱层的厚度小于与其相邻的第二量子阱层的厚度，并且大于第三量子阱层的厚度，除了第一和第二 量子阱层。
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