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公开(公告)号：US11748223B2
公开(公告)日：2023-09-05
申请号：US17563662
申请日：2021-12-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyungduk Lee , Younsoo Cheon , Jihwa Lee
CPC classification number: G06F11/3058 , G06F3/0614 , G06F11/076 , G06F11/3037 , G06F12/0246 , G06F12/0882
Abstract: A method of operating a storage device including a plurality of nonvolatile memories, each of the plurality of nonvolatile memories including a temperature sensor, includes checking whether a predetermined temperature check cycle for the plurality of nonvolatile memories has been reached, monitoring, in response to the checking result, temperature information of at least some of the plurality of nonvolatile memories using the temperature sensor, obtaining standing time information of the plurality of nonvolatile memories by applying a temperature acceleration condition based on the monitored temperature information, and changing at least one of a plurality of driving parameters required for operating each of the plurality of nonvolatile memories based on at least one of the monitored temperature information and the obtained standing time information.
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公开(公告)号：US11869598B2
公开(公告)日：2024-01-09
申请号：US17579902
申请日：2022-01-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jihwa Lee , Youhwan Kim , Kyungduk Lee , Hosung Ahn
CPC classification number: G11C16/16 , G11C16/08 , G11C16/105 , G11C16/28 , G11C16/30
Abstract: A storage device includes a controller configured to control a non-volatile memory device(s) having a plurality of memory blocks therein. The controller includes secure erase control logic configured to: (i) control secure erase operations on the plurality of memory blocks in response to a secure erase request received from a host, and (ii) set flags corresponding to the plurality of memory blocks such that a first flag corresponding to a first memory block, which has undergone at least two of the secure erase operations, has a first value. Adaptive control logic is provided, which is configured to change at least one operating condition associated with a write operation and/or read operation directed at the first memory block, in response to detecting that the first flag has the first value.
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公开(公告)号：US20220415404A1
公开(公告)日：2022-12-29
申请号：US17579902
申请日：2022-01-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jihwa Lee , Youhwan Kim , Kyungduk Lee , Hosung Ahn
Abstract: A storage device includes a controller configured to control a non-volatile memory device(s) having a plurality of memory blocks therein. The controller includes secure erase control logic configured to: (i) control secure erase operations on the plurality of memory blocks in response to a secure erase request received from a host, and (ii) set flags corresponding to the plurality of memory blocks such that a first flag corresponding to a first memory block, which has undergone at least two of the secure erase operations, has a first value. Adaptive control logic is provided, which is configured to change at least one operating condition associated with a write operation and/or read operation directed at the first memory block, in response to detecting that the first flag has the first value.
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公开(公告)号：US20220121544A1
公开(公告)日：2022-04-21
申请号：US17563662
申请日：2021-12-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyungduk Lee , Younsoo Cheon , Jihwa Lee
IPC: G06F11/30 , G06F12/0882 , G06F12/02 , G06F11/07 , G06F3/06
Abstract: A method of operating a storage device including a plurality of nonvolatile memories, each of the plurality of nonvolatile memories including a temperature sensor, includes checking whether a predetermined temperature check cycle for the plurality of nonvolatile memories has been reached, monitoring, in response to the checking result, temperature information of at least some of the plurality of nonvolatile memories using the temperature sensor, obtaining standing time information of the plurality of nonvolatile memories by applying a temperature acceleration condition based on the monitored temperature information, and changing at least one of a plurality of driving parameters required for operating each of the plurality of nonvolatile memories based on at least one of the monitored temperature information and the obtained standing time information.
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Patent Agency Ranking
公开(公告)号：US11941271B2
公开(公告)日：2024-03-26
申请号：US17583713
申请日：2022-01-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youhwan Kim , Jihwa Lee , Kyungduk Lee , Hosung Ahn
IPC: G06F3/06
CPC classification number: G06F3/064 , G06F3/0608 , G06F3/0679
Abstract: A storage device performing a secure erase and an operating method thereof are provided. The storage device may include a controller configured to control a non-volatile memory device including a plurality of blocks. The controller includes a secure erase control logic configured to control a secure erase operation on the plurality of blocks and perform a control operation in response to a secure erase request from a host with respect to a first block among the plurality of blocks such that the secure erase operation on the first block is skipped based on a result of determining at least one selected from a secure erase state and/or a deterioration state of the first block.
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公开(公告)号：US20220413701A1
公开(公告)日：2022-12-29
申请号：US17583713
申请日：2022-01-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youhwan Kim , Jihwa Lee , Kyungduk Lee , Hosung Ahn
IPC: G06F3/06
Abstract: A storage device performing a secure erase and an operating method thereof are provided. The storage device may include a controller configured to control a non-volatile memory device including a plurality of blocks. The controller includes a secure erase control logic configured to control a secure erase operation on the plurality of blocks and perform a control operation in response to a secure erase request from a host with respect to a first block among the plurality of blocks such that the secure erase operation on the first block is skipped based on a result of determining at least one selected from a secure erase state and/or a deterioration state of the first block.
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7.发明公开公开(公告)号：US20240055030A1
公开(公告)日：2024-02-15
申请号：US18204972
申请日：2023-06-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Younsoo Cheon , Jihwa Lee , Kyungduk Lee
CPC classification number: G11C7/04 , G11C11/5642 , G11C11/5628
Abstract: A storage device including a non-volatile memory for storing data, a temperature sensor having resistance that changes according to temperature of the temperature sensor, and a temperature measurement circuit including a plurality of transistors, which are turned on or off based on a current of the temperature sensor and have different threshold voltages from one another. The temperature management circuit may be configured to apply a current to the temperature sensor and generate information indicating the temperature of the temperature sensor or indicating damage to the temperature sensor based on an output current obtained from the plurality of transistors.
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公开(公告)号：US11791013B2
公开(公告)日：2023-10-17
申请号：US17382868
申请日：2021-07-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seungjun Oh , Jihwa Lee , Kyungduk Lee
CPC classification number: G11C29/702 , G06F3/0679 , G11C29/022 , G11C29/1201 , G11C29/12005 , G11C29/48 , G01R31/52
Abstract: A storage device includes a plurality of nonvolatile memory devices, a storage controller circuit and a leakage detection circuit. The storage controller circuit controls a plurality of nonvolatile memory devices, the storage controller circuit includes a plurality of connection terminals, each of the plurality of connection terminals is commonly connected to a corresponding set of pins, from among the pluralities of pins included in the plurality of nonvolatile memory devices, via a corresponding connection node, from among a plurality of connection nodes. The pins included in each set of pins have a same attribute. The leakage detection circuit is configured to determine whether leakage occurs at each set of pins based on the merged signal generated by the connection node connected to each set of pins, and configured to provide the storage controller circuit with a detection signal indicating a result of the determination.
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公开(公告)号：US11232008B2
公开(公告)日：2022-01-25
申请号：US16729743
申请日：2019-12-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyungduk Lee , Younsoo Cheon , Jihwa Lee
Abstract: A method of operating a storage device including a plurality of nonvolatile memories, each of the plurality of nonvolatile memories including a temperature sensor, includes checking whether a predetermined temperature check cycle for the plurality of nonvolatile memories has been reached, monitoring, in response to the checking result, temperature information of at least some of the plurality of nonvolatile memories using the temperature sensor, obtaining standing time information of the plurality of nonvolatile memories by applying a temperature acceleration condition based on the monitored temperature information, and changing at least one of a plurality of driving parameters required for operating each of the plurality of nonvolatile memories based on at least one of the monitored temperature information and the obtained standing time information.
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