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    METHOD OF READING DATA ABOUT MEMORY DEVICE, METHOD OF CONTROLLING MEMORY CONTROLLER, AND STORAGE DEVICE INCLUDING MEMORY DEVICE AND MEMORY CONTROLLER
    2.
    发明申请
    METHOD OF READING DATA ABOUT MEMORY DEVICE, METHOD OF CONTROLLING MEMORY CONTROLLER, AND STORAGE DEVICE INCLUDING MEMORY DEVICE AND MEMORY CONTROLLER 审中-公开

    公开(公告)号：US20190198097A1

    公开(公告)日：2019-06-27

    申请号：US16217315

    申请日：2018-12-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ji-su KIM ,  Dae-seok BYEON

    IPC: G11C11/56 ,  G11C16/28 ,  G11C16/34 ,  G11C7/14

    Abstract: A method of operating a memory device to read data may include determining, in a first read interval associated with a first read operation, a threshold voltage distribution of a most significant program state of a target logical memory page included in a first physical memory page among a plurality of physical memory pages, the first read operation being an operation of reading the target logical memory page of the first physical memory page; transmitting, to a memory controller, a distribution determination result, the distribution determination result being related to the threshold voltage distribution; receiving, from the memory controller, offset levels corrected based on the distribution determination result; and adjusting a read voltage based on offset levels prior to performing a second read operation on a second physical memory page among the plurality of physical memory pages.

    NON-VOLATILE MEMORY DEVICE AND A METHOD OF OPERATING THE SAME
    3.
    发明申请
    NON-VOLATILE MEMORY DEVICE AND A METHOD OF OPERATING THE SAME 审中-公开

    公开(公告)号：US20190214094A1

    公开(公告)日：2019-07-11

    申请号：US16149327

    申请日：2018-10-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin-bae BANG ,  Dae-seok BYEON ,  Ji-su KIM

    IPC: G11C16/26 ,  G11C16/04 ,  G11C11/56

    Abstract: A non-volatile memory device includes a memory cell array including a plurality of memory cells; a page buffer for performing a plurality of read operations and storing results of the read operations, wherein each of the read operations includes at least one sensing operation for selected memory cells from the plurality of memory cells; a multi-sensing manager for determining a number of sensing operations for each of the plurality of read operations and controlling the page buffer to perform the read operations; and a data identifier for identifying a data state of a bit for the selected memory cells based on the results of the read operations, wherein the multi-sensing manager determines the number of sensing operations for at least one read operation from among the read operations to be different from the number of sensing operations for other read operations from among the read operations.

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