公开(公告)号：US20190214094A1

公开(公告)日：2019-07-11

申请号：US16149327

申请日：2018-10-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-bae BANG ,  Dae-seok BYEON ,  Ji-su KIM

IPC: G11C16/26 ,  G11C16/04 ,  G11C11/56

Abstract: A non-volatile memory device includes a memory cell array including a plurality of memory cells; a page buffer for performing a plurality of read operations and storing results of the read operations, wherein each of the read operations includes at least one sensing operation for selected memory cells from the plurality of memory cells; a multi-sensing manager for determining a number of sensing operations for each of the plurality of read operations and controlling the page buffer to perform the read operations; and a data identifier for identifying a data state of a bit for the selected memory cells based on the results of the read operations, wherein the multi-sensing manager determines the number of sensing operations for at least one read operation from among the read operations to be different from the number of sensing operations for other read operations from among the read operations.

公开(公告)号：US20190198097A1

公开(公告)日：2019-06-27

申请号：US16217315

申请日：2018-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-su KIM ,  Dae-seok BYEON

IPC: G11C11/56 ,  G11C16/28 ,  G11C16/34 ,  G11C7/14

Abstract: A method of operating a memory device to read data may include determining, in a first read interval associated with a first read operation, a threshold voltage distribution of a most significant program state of a target logical memory page included in a first physical memory page among a plurality of physical memory pages, the first read operation being an operation of reading the target logical memory page of the first physical memory page; transmitting, to a memory controller, a distribution determination result, the distribution determination result being related to the threshold voltage distribution; receiving, from the memory controller, offset levels corrected based on the distribution determination result; and adjusting a read voltage based on offset levels prior to performing a second read operation on a second physical memory page among the plurality of physical memory pages.

公开(公告)号：US20160358648A1

公开(公告)日：2016-12-08

申请号：US15009814

申请日：2016-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mu-hui PARK ,  Yeong-taek LEE ,  Dae-seok BYEON

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C7/062 ,  G11C11/5642 ,  G11C13/0061 ,  G11C2013/0054 ,  G11C2211/5645

Abstract: A resistive memory device comprising: a memory cell having a programmable resistance representing stored data; and a read circuit configured to be connected to the memory cell via a first signal line and read the stored data, wherein the read circuit includes: a voltage controller configured to control a first voltage of the first signal line to be a constant voltage and output a signal to a sensing node; and a sense amplifier connected to the voltage controller via the sensing node, and configured to compare a sensing voltage of the sensing node with a reference voltage.

Abstract translation: 一种电阻式存储器件，包括：具有表示存储数据的可编程电阻的存储单元; 以及读取电路，被配置为经由第一信号线连接到所述存储单元并读取所存储的数据，其中所述读取电路包括：电压控制器，被配置为将所述第一信号线的第一电压控制为恒定电压并输出 到感测节点的信号; 以及感测放大器，其经由感测节点连接到电压控制器，并且被配置为将感测节点的感测电压与参考电压进行比较。

公开(公告)号：US20160099052A1

公开(公告)日：2016-04-07

申请号：US14724909

申请日：2015-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-kyu LEE ,  Yeong-taek LEE ,  Dae-seok BYEON ,  In-gyu BAEK ,  Man CHANG ,  Lijie ZHANG

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C7/04 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0097 ,  G11C2013/0073 ,  G11C2013/0088 ,  G11C2013/0092

Abstract: A method for operating a memory device includes sensing a temperature of the resistive memory device, setting a level of a set voltage or current for writing to a memory cell based on the temperature, setting a level of a reset voltage for reset writing to the memory cell based on the temperature, and performing a write operation on the memory cell based on the level of the set voltage or current and the level of the reset voltage. The memory device may be a resistive memory device.

Abstract translation: 一种用于操作存储器件的方法包括：感测电阻性存储器件的温度，根据温度设置用于写入存储器单元的设定电压或电流的电平，设置用于复位写入的复位电压的电平到存储器 基于温度，并且基于设定电压或电流的电平以及复位电压的电平对存储器单元执行写入操作。 存储器件可以是电阻式存储器件。

公开(公告)号：US20160099049A1

公开(公告)日：2016-04-07

申请号：US14796131

申请日：2015-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-kyu LEE ,  Yeong-taek LEE ,  Dae-seok BYEON ,  In-gyu BAEK ,  Man CHANG ,  Lijie ZHANG ,  Hyun-kook PARK

IPC: G11C13/00 ,  G11C11/56

CPC classification number: G11C13/004 ,  G11C7/04 ,  G11C11/1673 ,  G11C11/5607 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0064 ,  G11C2013/0054

Abstract: A method for operating a memory device includes sensing a change in temperature of the memory device, adjusting a level of a reference current for a read operation, and reading data from memory cells of the memory device based on the adjusted level of the reference current. The level of the reference current is adjusted from a reference value to a first value when the temperature of the memory device increases and is adjusted from the reference value to a second value when the temperature of the memory device decreases. A difference between the reference value and the first value is different from a difference the reference value and the second value.

Abstract translation: 用于操作存储器件的方法包括：检测存储器件的温度变化，调整读取操作的参考电流的电平，以及基于调节的参考电流的电平从存储器件的存储器单元读取数据。 当存储器件的温度升高时，将参考电流的电平从参考值调整到第一值，并且当存储器件的温度降低时，将参考电流的电平从参考值调整到第二值。 参考值和第一值之间的差异与参考值和第二值的差异不同。