公开(公告)号：US20170062575A1

公开(公告)日：2017-03-02

申请号：US15238721

申请日：2016-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGWOO SONG ,  JAEKYU LEE ,  JAEROK KAHNG ,  YongJun KIM

IPC: H01L29/40 ,  H01L27/22 ,  H01L27/108 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/408 ,  H01L27/10811 ,  H01L27/10823 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10891 ,  H01L27/228 ,  H01L29/4236 ,  H01L29/66666 ,  H01L29/7827

Abstract: A semiconductor device includes active pillars protruding from a semiconductor substrate and spaced apart from each other in a first direction and a second direction that is perpendicular to the first direction, a word line extending in the first direction between the active pillars, a drain region disposed in an upper portion of each of the active pillars, and a separation pattern provided between the word line and the drain region. A bottom surface of the separation pattern is disposed at a lower level than a bottom surface of the drain region.

Abstract translation: 半导体器件包括从半导体衬底突出并且在垂直于第一方向的第一方向和第二方向彼此间隔开的有源柱，在有源柱之间沿第一方向延伸的字线，设置的漏极区 在每个活动柱的上部，以及设置在字线和漏区之间的分离图案。 分离图案的底表面设置在比漏区的底表面更低的水平处。

公开(公告)号：US20200260025A1

公开(公告)日：2020-08-13

申请号：US16674202

申请日：2019-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINWOONG SEO ,  SEUNGSIK KIM ,  JUNGCHAK AHN ,  JAEKYU LEE ,  DONGMO IM ,  DONGSEOK CHO

IPC: H04N5/355

Abstract: A method of driving an image sensor includes integrating an overflowed charge from a photodiode in the floating diffusion area and a dynamic range capacitor. The dynamic range capacitor is formed between the floating diffusion area and a power supply voltage. The method further includes sampling a first voltage formed in the floating diffusion area by the integrated overflowed charge, resetting the photodiode, the floating diffusion area, and the dynamic range capacitor, sampling a reset level of the reset floating diffusion area, transferring a charge accumulated in the photodiode to the floating diffusion area, and sampling a second voltage formed in the floating diffusion area.

公开(公告)号：US20150123196A1

公开(公告)日：2015-05-07

申请号：US14598228

申请日：2015-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGWOO SONG ,  JAEKYU LEE

IPC: H01L23/528 ,  H01L23/522 ,  H01L29/423 ,  H01L27/108 ,  H01L27/11

CPC classification number: H01L23/528 ,  H01L23/5226 ,  H01L27/0203 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/11 ,  H01L27/228 ,  H01L27/2436 ,  H01L27/2463 ,  H01L29/4236 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are data storage devices and methods of manufacturing the same. The device may include a plurality of cell selection parts formed in a substrate, a plate conductive pattern covering the cell selection parts and electrically connected to first terminals of the cell selection parts, a plurality of through-pillars penetrating the plate conductive pattern and insulated from the plate conductive pattern, and a plurality of data storage parts directly connected to the plurality of through-pillars, respectively. The data storage parts may be electrically connected to second terminals of the cell selection parts, respectively.

Abstract translation: 提供数据存储装置及其制造方法。 该器件可以包括形成在衬底中的多个电池选择部件，覆盖电池选择部分并电连接到电池选择部件的第一端子的板状导电图案，穿过板状导电图案并与之绝缘的多个贯通柱 板状导电图案，以及分别与多个贯通柱直接连接的多个数据存储部。 数据存储部分可以分别电连接到小区选择部分的第二终端。

公开(公告)号：US20240406589A1

公开(公告)日：2024-12-05

申请号：US18668369

申请日：2024-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： JAEKYU LEE

IPC: H04N25/532 ,  H04N25/531 ,  H04N25/59 ,  H04N25/771

Abstract: Provided are an image pixel configured to selectively operate in a global shutter mode and a rolling shutter mode. An image pixel according to an embodiment of the present disclosure includes a photoelectric conversion element, a common circuit that includes a floating diffusion node configured to receive charges from the photoelectric conversion element and configured to transfer an output voltage to a first node based on a voltage of the floating diffusion node, a sampling circuit that includes a first capacitor and a second capacitor configured to store the output voltage of the first node, and a first transistor that electrically connects at least one of the first or second capacitors to the floating diffusion node.

公开(公告)号：US20240244351A1

公开(公告)日：2024-07-18

申请号：US18240000

申请日：2023-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： JAEKYU LEE ,  KYOUNG CHO NA ,  DONGSEOK CHO

IPC: H04N25/78 ,  H04N25/772

CPC classification number: H04N25/78 ,  H04N25/772 ,  H01L27/14645

Abstract: Disclosed is an image sensor. Each of a plurality of pixels includes a photo diode, a transfer transistor connected between the photo diode and a floating diffusion node, a reset transistor connected between the floating diffusion node and a first power node to which a first power supply voltage is applied, a first source follower transistor including a gate connected to the floating diffusion node, a first terminal connected to a second power node to which a second power supply voltage is applied, and a second terminal connected to a first node, a precharge transistor connected between the first node and a floating node, a first precharge select transistor connected between the floating node and a ground node, a second precharge select transistor connected between the first node and a second node, and a first capacitor connected between a gate of the precharge transistor and the floating node.