公开(公告)号：US20240244351A1

公开(公告)日：2024-07-18

申请号：US18240000

申请日：2023-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： JAEKYU LEE ,  KYOUNG CHO NA ,  DONGSEOK CHO

IPC: H04N25/78 ,  H04N25/772

CPC classification number: H04N25/78 ,  H04N25/772 ,  H01L27/14645

Abstract: Disclosed is an image sensor. Each of a plurality of pixels includes a photo diode, a transfer transistor connected between the photo diode and a floating diffusion node, a reset transistor connected between the floating diffusion node and a first power node to which a first power supply voltage is applied, a first source follower transistor including a gate connected to the floating diffusion node, a first terminal connected to a second power node to which a second power supply voltage is applied, and a second terminal connected to a first node, a precharge transistor connected between the first node and a floating node, a first precharge select transistor connected between the floating node and a ground node, a second precharge select transistor connected between the first node and a second node, and a first capacitor connected between a gate of the precharge transistor and the floating node.