公开(公告)号：US12062660B2

公开(公告)日：2024-08-13

申请号：US17863042

申请日：2022-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Keun Lee ,  Jong-Chul Park ,  Sang-Hyun Lee

IPC: H01L27/088 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/76832 ,  H01L21/76897 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823475 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a first etch stop layer, a second etch stop layer, and an interlayer insulation layer that are stacked on the gate structure, and a contact plug penetrating the interlayer insulation layer, the second etch stop layer, and the first etch stop layer and contacting a sidewall of the gate structure. The contact plug includes a lower portion having a first width and an upper portion having a second width. A lower surface of the contact plug has a stepped shape.

公开(公告)号：US20190333915A1

公开(公告)日：2019-10-31

申请号：US16360191

申请日：2019-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-Keun Lee ,  Jong-Chul Park ,  Sang-Hyun Lee

IPC: H01L27/088 ,  H01L29/66 ,  H01L29/78 ,  H01L21/768 ,  H01L21/8234

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a first etch stop layer, a second etch stop layer, and an interlayer insulation layer that are stacked on the gate structure, and a contact plug penetrating the interlayer insulation layer, the second etch stop layer, and the first etch stop layer and contacting a sidewall of the gate structure. The contact plug includes a lower portion having a first width and an upper portion having a second width. A lower surface of the contact plug has a stepped shape.

公开(公告)号：US11417652B2

公开(公告)日：2022-08-16

申请号：US16360191

申请日：2019-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-Keun Lee ,  Jong-Chul Park ,  Sang-Hyun Lee

IPC: H01L27/088 ,  H01L29/66 ,  H01L29/78 ,  H01L21/768 ,  H01L21/8234

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a first etch stop layer, a second etch stop layer, and an interlayer insulation layer that are stacked on the gate structure, and a contact plug penetrating the interlayer insulation layer, the second etch stop layer, and the first etch stop layer and contacting a sidewall of the gate structure. The contact plug includes a lower portion having a first width and an upper portion having a second width. A lower surface of the contact plug has a stepped shape.

公开(公告)号：US10050114B2

公开(公告)日：2018-08-14

申请号：US15652396

申请日：2017-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bok-Young Lee ,  Sung-Woo Kang ,  Sang-Hyun Lee ,  Hak-Yoon Ahn ,  Young-Mook Oh ,  In-Keun Lee ,  Seong-Han Oh ,  Young-Hun Choi

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/08 ,  H01L29/45 ,  H01L21/8234 ,  H01L23/535 ,  H01L27/088 ,  H01L29/66

CPC classification number: H01L29/41791 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/535 ,  H01L27/088 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A semiconductor device includes an active region in a shape of a fin extending in a first direction, the fin having source/drain regions spaced apart therein, gate structures crossing the fin between the source/drain regions, each including a gate electrode, a first contact structure in electrical contact with a first source/drain region, the first contact structure including a first lower contact and a first upper contact directly thereon, a second contact structure in electrical contact with a gate electrode of a gate structure, the second contact structure including a second lower contact and a second upper contact directly thereon, and a third contact structure in electrical contact with a gate electrode of a second gate structure and in electrical contact with a second source drain region, the third contact structure including a third lower contact and a third upper contact directly thereon.