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公开(公告)号：US20130260551A1
公开(公告)日：2013-10-03
申请号：US13903164
申请日：2013-05-28
发明人： Un-Byoung Kang , Kwang-chul Choi , Jung-Hwan Kim , Tae Hong Min , Hojin Lee , Minseung Yoon
IPC分类号： H01L21/48
CPC分类号： H01L21/4835 , H01L21/6836 , H01L21/76898 , H01L23/3114 , H01L23/3192 , H01L23/49827 , H01L24/06 , H01L24/45 , H01L24/48 , H01L25/0657 , H01L27/14618 , H01L2221/68327 , H01L2221/6834 , H01L2224/02166 , H01L2224/02313 , H01L2224/02372 , H01L2224/02375 , H01L2224/02381 , H01L2224/024 , H01L2224/03462 , H01L2224/03466 , H01L2224/03602 , H01L2224/0401 , H01L2224/04042 , H01L2224/05008 , H01L2224/05022 , H01L2224/05026 , H01L2224/05147 , H01L2224/05548 , H01L2224/05567 , H01L2224/05571 , H01L2224/05647 , H01L2224/06131 , H01L2224/06135 , H01L2224/06138 , H01L2224/06181 , H01L2224/13007 , H01L2224/13022 , H01L2224/13024 , H01L2224/13025 , H01L2224/16147 , H01L2224/16225 , H01L2224/16227 , H01L2224/29011 , H01L2224/32225 , H01L2224/45139 , H01L2224/48105 , H01L2224/48227 , H01L2224/48228 , H01L2224/73253 , H01L2224/73265 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/014 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15183 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2224/05552 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012
摘要： In a semiconductor device, an organic insulation pattern is disposed between first and second rerouting patterns. The organic insulation pattern may absorb the physical stress that occurs when the first and second rerouting patterns expand under heat. Since the organic insulation pattern is disposed between the first and second rerouting patterns, insulating properties can be increased relative to a semiconductor device in which a semiconductor pattern is disposed between rerouting patterns. Also, since a seed layer pattern is disposed between the first and second rerouting patterns and the organic insulation pattern and between the substrate and the organic insulation pattern, the adhesive strength of the first and second rerouting patterns is enhanced. This also reduces any issues with delamination. Also, the seed layer pattern prevents the metal that forms the rerouting pattern from being diffused to the organic insulation pattern. Therefore, a semiconductor device with enhanced reliability may be implemented.
摘要翻译： 在半导体器件中，有机绝缘图案设置在第一和第二重新布线图案之间。 有机绝缘图案可以吸收当第一和第二重新布线图案在加热下膨胀时发生的物理应力。 由于有机绝缘图案设置在第一和第二重新布线图案之间，所以可以相对于其中在重新布线图案之间设置半导体图案的半导体器件来增加绝缘性能。 此外，由于在第一和第二重新布线图案和有机绝缘图案之间以及基板和有机绝缘图案之间设置种子层图案，所以第一和第二布线图案的粘合强度提高。 这也减少了分层问题。 此外，种子层图案防止形成重新布线图案的金属扩散到有机绝缘图案。 因此，可以实现具有增强的可靠性的半导体器件。
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公开(公告)号：US11965674B2
公开(公告)日：2024-04-23
申请号：US17235340
申请日：2021-04-20
发明人： Juwan Park , Nakhyun Kim , Juyoung Kim , Changhyun Park , Moonsun Shin , Wonhee Lee , Hojin Lee , Changwoo Jung
摘要： An air purifier or air conditioner including a filter device. The air purifier includes: a main body: a suction port provided to allow air to flow into the main body; a filter provided in the main body to filter the air suctioned from the suction port and including a frame and a filter body fixed to the frame; an auxiliary filter member separably mounted on the filter; and a locking device provided on the frame of the filter such that the auxiliary filter member is separably mounted on the frame of the filter.
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公开(公告)号：US11908775B2
公开(公告)日：2024-02-20
申请号：US17645472
申请日：2021-12-22
发明人： Jaewon Hwang , Kwangjin Moon , Hojin Lee , Hyungjun Jeon
IPC分类号： H01L23/48 , H01L23/485 , H01L23/535 , H01L23/00
CPC分类号： H01L23/485 , H01L23/481 , H01L23/535 , H01L24/29 , H01L24/45
摘要： A semiconductor device includes a semiconductor substrate having a first surface adjacent to an active layer; a first insulating layer disposed on the first surface of the semiconductor substrate; a second insulating layer disposed on the first insulating layer; an etch stop structure interposed between the first insulating layer and the second insulating layer and including a plurality of etch stop layers; a contact wiring pattern disposed inside the second insulating layer and surrounded by at least one etch stop layer of the plurality of etch stop layers; and a through electrode structure configured to pass through the semiconductor substrate, the first insulating layer, and at least one etch stop layer of the plurality of etch stop layers in a vertical direction and contact the contact wiring pattern.
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公开(公告)号：US20230139574A1
公开(公告)日：2023-05-04
申请号：US17851289
申请日：2022-06-28
发明人： JUNGGUN YOU , Beomjin Park , Sughyun Sung , Hojin Lee , Dongwon Kim , Donggyu Lee , Myoung-Sun Lee , Keun Hwi Cho , Hanbyul Choi , Jiyong Ha
IPC分类号： H01L29/423 , H01L29/786 , H01L29/66
摘要： A semiconductor device includes: an active pattern on a substrate, wherein the active pattern includes a plurality of channel layers stacked on one another; a plurality of source/drain patterns spaced apart from each other in a first direction and disposed on the active pattern, wherein the plurality of source/drain patterns are connected to each other through the plurality of channel layers; and first and second gate electrodes at least partially surrounding the channel layers and extending in a second direction, wherein the second direction intersects the first direction, wherein the active pattern has a first sidewall and a second sidewall that faces the first sidewall, and wherein a first distance between the first sidewall of the active pattern and an outer sidewall of the first gate electrode is different from a second distance between the second sidewall of the active pattern and an outer sidewall of the second gate electrode.
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公开(公告)号：US20230352410A1
公开(公告)日：2023-11-02
申请号：US18347512
申请日：2023-07-05
发明人： Jinnam Kim , Kwangjin Moon , Hojin Lee , Pilkyu Kang , Hoonjoo Na
IPC分类号： H01L23/535 , H01L29/78 , H01L29/08 , H01L29/06 , H01L29/417 , H01L29/66 , H01L21/768 , H01L23/48 , H01L23/528 , H01L23/485
CPC分类号： H01L23/535 , H01L29/7851 , H01L29/0847 , H01L29/0653 , H01L29/41791 , H01L29/66795 , H01L21/76805 , H01L21/76831 , H01L21/76843 , H01L21/76895 , H01L21/76898 , H01L23/481 , H01L23/5286 , H01L23/485
摘要： A semiconductor device includes a substrate having a first and second surface opposite to each other, and an active region on the first surface and defined by a first isolation region; a plurality of active fins on the active region, extending in a first direction, and defined by a second isolation region having a second depth smaller than a first depth of the first isolation region; a buried conductive wiring in a trench adjacent to the fins, and extending in a direction of the trench; a filling insulation portion in the trench, and having the wiring therein; an interlayer insulation layer on the first and second isolation regions and on the buried conductive wiring; a contact structure penetrating the interlayer insulation layer, and contacting the buried conductive wiring; and a conductive through structure extending through the substrate from the second surface to the trench, and contacting the buried conductive wiring.
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公开(公告)号：US11525208B2
公开(公告)日：2022-12-13
申请号：US17100485
申请日：2020-11-20
发明人： Inbang Song , Hyeonuk Na , Kyoungmin Park , Jaebok Lee , Hojin Lee , Seokho Ju , Sangyeon Pyo , Yeonsoo Ham
IPC分类号： D06F71/34 , D06F71/04 , D06F71/29 , D06F71/40 , D06F34/30 , D06F58/44 , D06F58/10 , D06F58/26 , D06F58/20
摘要： A clothes treatment apparatus includes a cabinet; an inner door disposed to be rotatable in a front surface of the cabinet and provided with an opening; an outer door disposed to form a space in which clothes are mounted between a front surface of the inner door and the outer door, the outer door disposed to rotate with respect to the cabinet together with the inner door or with respect to the inner door separately from the inner door; a heating plate disposed on a rear surface of the outer door; a holding device disposed in an upper portion of the space between the inner door and the outer door and formed to hold one end of the clothes; and a pair of clips disposed under the holding device in the space between the inner door and the outer door and formed to hold both sides of the clothes.
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公开(公告)号：US11371183B2
公开(公告)日：2022-06-28
申请号：US17009274
申请日：2020-09-01
发明人： Yeonsoo Ham , Jiho Seo , Jaebok Lee , Hojin Lee , Seokho Ju , Yongjun Hwang
摘要： A clothes care apparatus including a main body including a clothes care room, a support device arranged inside the clothes care room and configured to support clothes, and a steam generating device configured to supply steam into the clothes care room, wherein the support device includes a first support member, and a second support member and a third support member that are arranged in a first direction with respect to the first support member, the first support member and each of the second support member and the third support member are separated by a first separation distance, the second support member and the third support member are separated by a second separation distance in a second direction which is perpendicular to the first direction, wherein each of the first separation distances, and the second separation distance are variable to, when the clothes are supported on the support device and steam is supplied by the steam generating device, prevent wrinkles.
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公开(公告)号：US11961788B2
公开(公告)日：2024-04-16
申请号：US17708137
申请日：2022-03-30
发明人： Hyoukyung Cho , Hojin Lee , Kwangjin Moon
IPC分类号： H01L23/48 , H01L21/762 , H01L21/768 , H01L25/065 , H01L29/06
CPC分类号： H01L23/481 , H01L21/76224 , H01L21/76816 , H01L21/76898 , H01L25/0657 , H01L29/0649 , H01L2225/06544
摘要： A semiconductor device includes: a semiconductor substrate having opposing first side and second sides; an active region and an isolation region on the first side; a circuit device on the active region; a front side interconnection structure on the first side and including front side interconnection layers disposed on different levels; first and second back side interconnection structures below the second side; a buried structure having a portion disposed in the isolation region and including a conductive line; a first through-electrode structure including a first through-electrode contacting the conductive line and penetrating the semiconductor substrate between the conductive line and the first back side interconnection structure; and a second through-electrode structure including a second through-electrode penetrating the semiconductor substrate between a first front side interconnection layer and the second back side interconnection structure. The first front side interconnection layer is on a level higher than that of the conductive line.
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公开(公告)号：US11721628B2
公开(公告)日：2023-08-08
申请号：US16863126
申请日：2020-04-30
发明人： Jinnam Kim , Kwangjin Moon , Hojin Lee , Pilkyu Kang , Hoonjoo Na
IPC分类号： H01L23/535 , H01L29/78 , H01L29/08 , H01L29/06 , H01L29/417 , H01L29/66 , H01L23/48 , H01L23/528 , H01L23/485 , H01L21/768
CPC分类号： H01L23/535 , H01L21/76805 , H01L21/76831 , H01L21/76843 , H01L21/76895 , H01L21/76898 , H01L23/481 , H01L23/485 , H01L23/5286 , H01L29/0653 , H01L29/0847 , H01L29/41791 , H01L29/66795 , H01L29/7851
摘要： A semiconductor device includes a substrate having a first surface and a second surface opposite to each other, and having an active region located on the first surface and defined by a first isolation region; a plurality of active fins arranged on the active region, extending in a first direction, and defined by a second isolation region having a second depth smaller than a first depth of the first isolation region; a buried conductive wiring in a trench adjacent to the plurality of active fins, and extending in a direction of the trench; a filling insulation portion in the trench, and having the buried conductive wiring therein; an interlayer insulation layer on the first and second isolation regions and on the buried conductive wiring; a contact structure penetrating the interlayer insulation layer, and contacting the buried conductive wiring; and a conductive through structure extending through the substrate from the second surface to the trench, and contacting the buried conductive wiring.
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公开(公告)号：US20220359348A1
公开(公告)日：2022-11-10
申请号：US17645472
申请日：2021-12-22
发明人： Jaewon Hwang , Kwangjin Moon , Hojin Lee , Hyungjun Jeon
IPC分类号： H01L23/485 , H01L23/535 , H01L23/48 , H01L23/00
摘要： A semiconductor device includes a semiconductor substrate having a first surface adjacent to an active layer; a first insulating layer disposed on the first surface of the semiconductor substrate; a second insulating layer disposed on the first insulating layer; an etch stop structure interposed between the first insulating layer and the second insulating layer and including a plurality of etch stop layers; a contact wiring pattern disposed inside the second insulating layer and surrounded by at least one etch stop layer of the plurality of etch stop layers; and a through electrode structure configured to pass through the semiconductor substrate, the first insulating layer, and at least one etch stop layer of the plurality of etch stop layers in a vertical direction and contact the contact wiring pattern.
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