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公开(公告)号:US20230144388A1
公开(公告)日:2023-05-11
申请号:US17983145
申请日:2022-11-08
发明人: Heungkyu KWON , Taewoo Kang , Taehun Kim
IPC分类号: H01L25/18 , H01L23/00 , H01L23/367 , H01L23/42
CPC分类号: H01L25/18 , H01L23/562 , H01L23/367 , H01L23/42 , H01L2224/16227 , H01L24/16 , H01L2224/32225 , H01L24/32 , H01L2224/73204 , H01L24/73 , H01L2224/73253 , H01L2224/33181 , H01L24/33
摘要: A semiconductor package includes a package substrate including a first chip mounting area, a second chip mounting area, and a third chip mounting area spaced apart from one another in a first direction, semiconductor chips mounted on the first to third chip mounting areas, a first stiffener mounted on the package substrate to separate the first chip mounting area from the second chip mounting area, and a second stiffener mounted on the package substrate to separate the second chip mounting area from the third chip mounting area.
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公开(公告)号:US20170185119A1
公开(公告)日:2017-06-29
申请号:US15459403
申请日:2017-03-15
发明人: Heungkyu KWON , Jae Choon KIM , Eunseok CHO , Jichul KIM
摘要: A surface temperature management method of mobile device is provided. The method includes sensing a temperature of an application processor in an operation mode of the mobile device; and controlling the application processor using the sensed temperature and a surface temperature management table to manage a surface temperature of a target part of the mobile device. The surface temperature management table includes information related to the temperature of the application processor corresponding to the surface temperature of the target part in the operation mode.
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公开(公告)号:US20230050969A1
公开(公告)日:2023-02-16
申请号:US17884143
申请日:2022-08-09
发明人: Heungkyu KWON , Heejung CHOI , Kyojin HWANG
IPC分类号: H01L25/18 , H01L23/498 , H01L23/538 , H01L23/31 , H01L23/00
摘要: Provided is a package-on-package (PoP). The PoP includes a lower package, an upper package on the lower package, an interposer substrate disposed between the lower package and the upper package, and a plurality of balls connecting the interposer substrate to the upper package, in which the lower package includes a first substrate, and a first die and a second die disposed side by side in a horizontal direction, on the first substrate, in which the upper package includes a second substrate, a third die on the second substrate, and a plurality of ball pads disposed on a surface of the second substrate, the interposer substrate comprises on a surface thereof a plurality of ball lands to which a plurality of balls are attached, and at least some of the plurality of ball lands overlap the first die and the second die in a vertical direction that intersects the horizontal direction.
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公开(公告)号:US20200235083A1
公开(公告)日:2020-07-23
申请号:US16744437
申请日:2020-01-16
发明人: Heungkyu KWON
IPC分类号: H01L25/16 , H01L23/538 , H01L23/367 , H01L23/498
摘要: A semiconductor module may include a system board including a top surface and a bottom surface, a module substrate provided on the top surface of the system board, a system semiconductor package mounted on the module substrate, and first and second power management semiconductor packages mounted on the module substrate. The first and second power management semiconductor packages may be spaced apart from each other in a first direction, which is parallel to a top surface of the module substrate, with the system semiconductor package interposed therebetween.
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公开(公告)号:US20160240509A1
公开(公告)日:2016-08-18
申请号:US15135364
申请日:2016-04-21
发明人: Heungkyu KWON , Kang Joon LEE , JaeWook YOO , Su-Chang LEE
IPC分类号: H01L25/065 , H01L23/31 , H01L23/00
CPC分类号: H01L23/49811 , H01L23/13 , H01L23/16 , H01L23/18 , H01L23/3157 , H01L23/488 , H01L23/49816 , H01L23/49838 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/73 , H01L25/0652 , H01L25/0657 , H01L25/105 , H01L2224/0401 , H01L2224/0557 , H01L2224/13025 , H01L2224/131 , H01L2224/1319 , H01L2224/13541 , H01L2224/13561 , H01L2224/13583 , H01L2224/13609 , H01L2224/13611 , H01L2224/13616 , H01L2224/13624 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13649 , H01L2224/13655 , H01L2224/13657 , H01L2224/1366 , H01L2224/13664 , H01L2224/13666 , H01L2224/13669 , H01L2224/1367 , H01L2224/13671 , H01L2224/13672 , H01L2224/13679 , H01L2224/1368 , H01L2224/13681 , H01L2224/13684 , H01L2224/1401 , H01L2224/1403 , H01L2224/14135 , H01L2224/14136 , H01L2224/14181 , H01L2224/14505 , H01L2224/16146 , H01L2224/16225 , H01L2224/1703 , H01L2224/1712 , H01L2224/17181 , H01L2224/175 , H01L2224/1751 , H01L2224/2919 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06555 , H01L2225/06565 , H01L2225/1023 , H01L2225/1058 , H01L2225/1082 , H01L2924/00014 , H01L2924/15153 , H01L2924/15156 , H01L2924/15311 , H01L2924/15321 , H01L2924/15787 , H01L2924/18161 , H01L2924/3511 , H01L2924/00012 , H01L2924/00 , H01L2924/0665 , H01L2924/206 , H01L2924/014 , H01L2224/05552
摘要: Semiconductor packages include a first substrate including a central portion and a peripheral portion, at least one first central connection member attached to the central portion of the first substrate, and at least one first peripheral connection member attached to the peripheral portion of the first substrate. The first central connection member includes a first supporter and a first fusion conductive layer surrounding the first supporter.
摘要翻译: 半导体封装包括包括中心部分和周边部分的第一基板,附接到第一基板的中心部分的至少一个第一中心连接部件和附接到第一基板的周边部分的至少一个第一周边连接部件。 第一中心连接构件包括第一支撑件和围绕第一支撑件的第一融合导电层。
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公开(公告)号:US20210358831A1
公开(公告)日:2021-11-18
申请号:US17384863
申请日:2021-07-26
发明人: Heungkyu KWON
IPC分类号: H01L23/373 , H01L23/31 , H01L23/367 , H01L23/00
摘要: Provided is a semiconductor package system. The system includes a substrate, a first semiconductor package on the substrate, a second semiconductor package on the substrate, a first passive element on the substrate, a heat dissipation structure on the first semiconductor package, the second semiconductor package, and the first passive element, and a first heat conduction layer between the first semiconductor package and the heat dissipation structure. A sum of a height of the first semiconductor package and a thickness of the first heat conduction layer may be greater than a height of the first passive element. The height of the first semiconductor package may be greater than a height of the second semiconductor package.
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公开(公告)号:US20210233827A1
公开(公告)日:2021-07-29
申请号:US17232495
申请日:2021-04-16
发明人: Heungkyu KWON
IPC分类号: H01L23/367 , H01L23/31 , H01L23/373 , H01L25/16
摘要: A semiconductor package system includes a substrate, a first and a second semiconductor package, a first thermal conductive layer, a first passive device, and a heat radiation structure. The first and second semiconductor package and first passive device may be mounted on a top surface of the substrate. The first semiconductor package may include a first semiconductor chip that includes a plurality of logic circuits. The first thermal conductive layer may be on the first semiconductor package. The heat radiation structure may be on the first thermal conductive layer, the second semiconductor package, and the first passive device. The heat radiation structure may include a first bottom surface physically contacting the first thermal conductive layer, and a second bottom surface at a higher level than that of the first bottom surface. The second bottom surface may be on the second semiconductor package and/or the first passive device.
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公开(公告)号:US20200091030A1
公开(公告)日:2020-03-19
申请号:US16573107
申请日:2019-09-17
发明人: Heungkyu KWON
IPC分类号: H01L23/367 , H01L25/065 , H01L25/18 , H01L21/48
摘要: Disclosed is a semiconductor package system comprising a substrate, a first semiconductor package on the substrate, and a heat radiation structure on the first semiconductor package. The heat radiation structure includes a first part on a top surface of the first semiconductor package and a second part connected to the first part. The second part has a bottom surface at a level lower than a level of the top surface of the first semiconductor package. A vent hole is provided between an edge region of the substrate and the first part of the heat radiation structure.
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