公开(公告)号：US20200219920A1

公开(公告)日：2020-07-09

申请号：US16555151

申请日：2019-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesung HUR ,  Youngtak KIM ,  Hajin LIM

IPC: H01L27/146

Abstract: An image sensor and a method of fabricating an image sensor, the image sensor including a plurality of color filters spaced apart from each other on a semiconductor substrate; a protective layer covering sidewalls of the color filters and top surfaces of the color filters; and a low-refractive pattern filling a space between the color filters.

公开(公告)号：US20240105746A1

公开(公告)日：2024-03-28

申请号：US18368372

申请日：2023-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongmin JEON ,  Hajin LIM ,  Keewon KIM ,  Kijoong YOON ,  Taeksoo JEON ,  Jsesung Hur

IPC: H01L27/146 ,  G02B5/04

CPC classification number: H01L27/14625 ,  G02B5/04 ,  H01L27/14685

Abstract: An image sensor includes a light detector disposed on a substrate and including a plurality of light sensing cells, an interlayer device disposed on the light detector and configured to transmit a light, and a nano prism including a first nano post and a second nano post spaced apart from each other on the interlayer device and configured to condense a light onto the light detector, the first nano post includes a first refractive layer doped with aluminum at a first doping concentration, and a second refractive layer surrounding a bottom surface and a side surface of the first refractive layer and doped with aluminum at a second doping concentration, and the first doping concentration is higher than the second doping concentration.

公开(公告)号：US20140273382A1

公开(公告)日：2014-09-18

申请号：US14289076

申请日：2014-05-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinho DO ,  Hajin LIM ,  WeonHong KIM ,  Kyungil HONG ,  Moonkyun SONG

IPC: H01L21/8234

CPC classification number: H01L21/823462 ,  H01L21/26506 ,  H01L21/28185 ,  H01L21/2822 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66575 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

Abstract: A substrate including an NMOS transistor region and a PMOS transistor region is prepared. A silicon-germanium layer is formed on the PMOS transistor region. Nitrogen atoms are injected in an upper portion of the silicon-germanium layer. A first gate dielectric layer is formed on the NMOS transistor region and the PMOS transistor region. The nitrogen atoms are injected into the upper portion of the silicon-germanium layer before forming the first gate dielectric layer.

Abstract translation: 准备包括NMOS晶体管区域和PMOS晶体管区域的衬底。 在PMOS晶体管区域上形成硅 - 锗层。 氮原子注入硅 - 锗层的上部。 在NMOS晶体管区域和PMOS晶体管区域上形成第一栅极电介质层。 在形成第一栅极介电层之前，将氮原子注入硅 - 锗层的上部。

公开(公告)号：US20240258350A1

公开(公告)日：2024-08-01

申请号：US18421468

申请日：2024-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeyeon PARK ,  Yunki LEE ,  Jieun KIM ,  Keosung PARK ,  Hajin LIM ,  Taeksoo JEON ,  Hyunkyu CHOI ,  Jaesung HUR

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14645

Abstract: Provided is an image sensor including a first substrate including a pixel area and a peripheral area adjacent to the pixel area, the pixel area including a plurality of pixels in a 2-dimensional array, a first wiring layer on a lower surface of the first substrate, an anti-reflective layer having a first refractive index, the anti-reflective layer being on an upper surface of the first substrate, and color filters on the anti-reflective layer corresponding to the pixel area and spaced apart from each other by a metal-free grid pattern.

公开(公告)号：US20230361142A1

公开(公告)日：2023-11-09

申请号：US18170652

申请日：2023-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeyeon PARK ,  Hyungkeun GWEON ,  Bumsuk KIM ,  Jieun KIM ,  Keo-Sung PARK ,  Yun Ki LEE ,  Hajin LIM ,  Taeksoo JEON ,  Jaesung HUR

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14621

Abstract: Disclosed is an image sensor including a first substrate that has a first surface and a second surface opposite to the first substrate and including a pixel array region and an edge region, an antireflection structure on the second surface, a pixel separation part in the first substrate and separating pixels from each other, and a microlens array on the antireflection structure. The antireflection structure includes a first dielectric layer, a titanium oxide layer, a second dielectric layer, and a third dielectric layer that are sequentially stacked. The first dielectric layer, the second dielectric layer, and the third dielectric layer include different materials from each other. On the edge region, the third dielectric layer penetrates the second dielectric layer and the titanium oxide layer to contact with the first dielectric layer.

公开(公告)号：US20140175569A1

公开(公告)日：2014-06-26

申请号：US14190346

申请日：2014-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WeonHong KIM ,  Dae-Kwon JOO ,  Hajin LIM ,  Jinho DO ,  Kyungil HONG ,  Moonkyun SONG

IPC: H01L29/51

CPC classification number: H01L29/512 ,  H01L21/28202 ,  H01L21/28255 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/1054 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

Abstract: A method of fabricating a semiconductor device includes forming a lower interfacial layer on a semiconductor layer, the lower interfacial layer being a nitride layer, forming an intermediate interfacial layer on the lower interfacial layer, the intermediate interfacial layer being an oxide layer, and forming a high-k dielectric layer on the intermediate interfacial layer. The high-k dielectric layer has a dielectric constant that is higher than dielectric constants of the lower interfacial layer and the intermediate interfacial layer.

Abstract translation: 制造半导体器件的方法包括在半导体层上形成下界面层，下界面层为氮化物层，在下界面层上形成中间界面层，中间界面层为氧化物层，形成 中间界面层上的高k电介质层。 高k电介质层的介电常数高于下界面层和中间界面层的介电常数。