公开(公告)号：US20240021638A1

公开(公告)日：2024-01-18

申请号：US18221736

申请日：2023-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeaju JANG ,  Dongmin KEUM ,  Kwanghee LEE ,  Bumsuk KIM ,  Jinho KIM ,  Yun Ki LEE

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14645

Abstract: An image sensor includes a first pixel group on a substrate and including a plurality of first pixels, a second pixel group on the substrate and including a plurality of second pixels, where at least one of the plurality of first pixels and at least one of the plurality of second pixels are adjacent in a first direction, a first autofocus pixel group between the first pixel group and the second pixel group, the first autofocus pixel group including a first autofocus pixel adjacent to the first pixel group and a second autofocus pixel adjacent to the second pixel group, a first color filter on the first autofocus pixel and the second autofocus pixel, a second color filter on the plurality of second pixels, and a light-shield pattern that separates the first color filter and the second color filter.

公开(公告)号：US20180331135A1

公开(公告)日：2018-11-15

申请号：US16026265

申请日：2018-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun Ki LEE ,  Minwook JUNG

IPC: H01L27/146 ,  H01L29/06

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L29/0649

Abstract: An image sensor includes a substrate including a plurality of pixel regions and having a trench between the pixel regions, a photoelectric conversion part in the substrate of each of the pixel regions, and a device isolation pattern in the trench. The device isolation pattern defines an air gap. The device isolation pattern has an intermediate portion and an upper portion narrower than the intermediate portion.

公开(公告)号：US20180190690A1

公开(公告)日：2018-07-05

申请号：US15857695

申请日：2017-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun Ki LEE ,  Min Wook JUNG

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor is provided. The image sensor includes, a substrate including a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, a photoelectric conversion layer disposed on the light-receiving region of the substrate, an anti-reflection layer disposed on the photoelectric conversion layer and including a plurality of subsidiary anti-reflection layers, a microlens disposed on the anti-reflection layer, a delamination-preventing layer disposed on the pad region of the substrate, and a wiring layer disposed on the delamination-preventing layer, wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.

公开(公告)号：US20240128299A1

公开(公告)日：2024-04-18

申请号：US18398981

申请日：2023-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun Ki LEE ,  Jong Hoon PARK ,  Jun Sung PARK

IPC: H01L27/146 ,  H10K59/13

CPC classification number: H01L27/1464 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14645 ,  H10K59/13

Abstract: In some example embodiments, a back side illumination (BSI) image sensor may include a pixel configured to generate electrical signals in response to light incident on a back side of a substrate. In some example embodiments, the pixel includes, a photodiode, a device isolation film adjacent to the photodiode, a dark current suppression layer above the photodiode, a light shield grid above the photodiode and including an opening area of 1 to 15% of an area of the pixel, a light shielding filter layer above the light shield grid, a planarization layer above the light shielding filter layer, a lens above the planarization layer, and/or an anti-reflective film between the photodiode and the lens.

公开(公告)号：US20210384234A1

公开(公告)日：2021-12-09

申请号：US17409048

申请日：2021-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun Ki LEE ,  Jong Hoon PARK ,  Jun Sung PARK

IPC: H01L27/146 ,  H01L27/32

Abstract: In some example embodiments, a back side illumination (BSI) image sensor may include a pixel configured to generate electrical signals in response to light incident on a back side of a substrate. In some example embodiments, the pixel includes, a photodiode, a device isolation film adjacent to the photodiode, a dark current suppression layer above the photodiode, a light shield grid above the photodiode and including an opening area of 1 to 15% of an area of the pixel, a light shielding filter layer above the light shield grid, a planarization layer above the light shielding filter layer, a lens above the planarization layer, and/or an anti-reflective film between the photodiode and the lens.

公开(公告)号：US20200321370A1

公开(公告)日：2020-10-08

申请号：US16907862

申请日：2020-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun Ki LEE

IPC: H01L27/146 ,  H04N5/361

Abstract: An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.

公开(公告)号：US20200013809A1

公开(公告)日：2020-01-09

申请号：US16570142

申请日：2019-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun Ki LEE ,  Minwook JUNG

IPC: H01L27/146 ,  H01L29/06

Abstract: An image sensor includes a substrate including a plurality of pixel regions and having a trench between the pixel regions, a photoelectric conversion part in the substrate of each of the pixel regions, and a device isolation pattern in the trench. The device isolation pattern defines an air gap. The device isolation pattern has an intermediate portion and an upper portion narrower than the intermediate portion.

公开(公告)号：US20240313018A1

公开(公告)日：2024-09-19

申请号：US18535561

申请日：2023-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hye Yeon PARK ,  Yun Ki LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes: a semiconductor substrate of a first conductivity type, the semiconductor substrate including: a first surface, a second surface opposite to the first surface, a pixel region, and a pixel isolation structure; and a photoelectric conversion region in the pixel region, the photoelectric conversion region having an impurity of a second conductivity type, wherein the pixel isolation structure is configured to enclose the photoelectric conversion region, and wherein the pixel isolation structure comprises: an air gap, a liner insulating pattern between the air gap and the semiconductor substrate, and a capping pattern adjacent to the second surface of the semiconductor substrate.

公开(公告)号：US20240258346A1

公开(公告)日：2024-08-01

申请号：US18387933

申请日：2023-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghyun KIM ,  Jonghoon PARK ,  Yun Ki LEE

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor includes: a substrate; a plurality of photodiodes disposed in the substrate; an element isolation film disposed between the plurality of photodiodes; an anti-reflection layer disposed on the plurality of photodiodes and the element isolation film; a plurality of color filters disposed on the anti-reflection layer; a fence pattern disposed between the plurality of color filters and in the anti-reflection layer; and micro lenses disposed on the plurality of color filters, wherein the fence pattern includes a first layer and a second layer that is disposed on the first layer and that includes a material different from that of the first layer, the first layer is disposed in the anti-reflection layer, and the second layer includes a first part and a second part, wherein the first part is disposed in the plurality of color filters, and wherein the second part is disposed in the anti-reflection layer.

公开(公告)号：US20210005657A1

公开(公告)日：2021-01-07

申请号：US17029115

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bomi KIM ,  BumSuk KIM ,  Jung-Saeng KIM ,  Yun Ki LEE ,  Taesub JUNG

IPC: H01L27/146 ,  H04N5/341

Abstract: Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.