IMAGE SENSORS AND METHODS OF FORMING THE SAME

    公开(公告)号:US20200013809A1

    公开(公告)日:2020-01-09

    申请号:US16570142

    申请日:2019-09-13

    Abstract: An image sensor includes a substrate including a plurality of pixel regions and having a trench between the pixel regions, a photoelectric conversion part in the substrate of each of the pixel regions, and a device isolation pattern in the trench. The device isolation pattern defines an air gap. The device isolation pattern has an intermediate portion and an upper portion narrower than the intermediate portion.

    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240395842A1

    公开(公告)日:2024-11-28

    申请号:US18406918

    申请日:2024-01-08

    Abstract: An image sensor includes a semiconductor substrate including pixels, a first surface, and a second surface opposite to the first surface. A trench isolation layer is provided in a trench penetrating the first surface and the second surface of the semiconductor substrate, and separating the pixels from each other. A micro lens is disposed on the second surface, wherein the trench isolation layer includes: a first conductive isolation layer extending from the first surface to the second surface. An insulation liner is disposed between the first conductive isolation layer and the semiconductor substrate. A second conductive isolation layer extends from the second surface to the first surface, the second conductive isolation layer being in contact with the first conductive isolation layer.

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