公开(公告)号：US20240234458A1

公开(公告)日：2024-07-11

申请号：US18381800

申请日：2023-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Je-Hyung RYU ,  Haji LIM ,  Jongmin JEON ,  Taeksoo JEON ,  Jaesung HUR

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463

Abstract: Image sensors and fabrication methods thereof are provided. An image sensor includes a semiconductor substrate including pixel regions, and a fence structure that defines openings that correspond to the pixel regions. A fence structure includes a metal pattern on the semiconductor substrate, a low-refractive pattern on the metal pattern, and a metal oxide pattern between the metal pattern and the low-refractive pattern.

公开(公告)号：US20240105746A1

公开(公告)日：2024-03-28

申请号：US18368372

申请日：2023-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongmin JEON ,  Hajin LIM ,  Keewon KIM ,  Kijoong YOON ,  Taeksoo JEON ,  Jsesung Hur

IPC: H01L27/146 ,  G02B5/04

CPC classification number: H01L27/14625 ,  G02B5/04 ,  H01L27/14685

Abstract: An image sensor includes a light detector disposed on a substrate and including a plurality of light sensing cells, an interlayer device disposed on the light detector and configured to transmit a light, and a nano prism including a first nano post and a second nano post spaced apart from each other on the interlayer device and configured to condense a light onto the light detector, the first nano post includes a first refractive layer doped with aluminum at a first doping concentration, and a second refractive layer surrounding a bottom surface and a side surface of the first refractive layer and doped with aluminum at a second doping concentration, and the first doping concentration is higher than the second doping concentration.

公开(公告)号：US20240258350A1

公开(公告)日：2024-08-01

申请号：US18421468

申请日：2024-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeyeon PARK ,  Yunki LEE ,  Jieun KIM ,  Keosung PARK ,  Hajin LIM ,  Taeksoo JEON ,  Hyunkyu CHOI ,  Jaesung HUR

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14645

Abstract: Provided is an image sensor including a first substrate including a pixel area and a peripheral area adjacent to the pixel area, the pixel area including a plurality of pixels in a 2-dimensional array, a first wiring layer on a lower surface of the first substrate, an anti-reflective layer having a first refractive index, the anti-reflective layer being on an upper surface of the first substrate, and color filters on the anti-reflective layer corresponding to the pixel area and spaced apart from each other by a metal-free grid pattern.

公开(公告)号：US20230361142A1

公开(公告)日：2023-11-09

申请号：US18170652

申请日：2023-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeyeon PARK ,  Hyungkeun GWEON ,  Bumsuk KIM ,  Jieun KIM ,  Keo-Sung PARK ,  Yun Ki LEE ,  Hajin LIM ,  Taeksoo JEON ,  Jaesung HUR

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14621

Abstract: Disclosed is an image sensor including a first substrate that has a first surface and a second surface opposite to the first substrate and including a pixel array region and an edge region, an antireflection structure on the second surface, a pixel separation part in the first substrate and separating pixels from each other, and a microlens array on the antireflection structure. The antireflection structure includes a first dielectric layer, a titanium oxide layer, a second dielectric layer, and a third dielectric layer that are sequentially stacked. The first dielectric layer, the second dielectric layer, and the third dielectric layer include different materials from each other. On the edge region, the third dielectric layer penetrates the second dielectric layer and the titanium oxide layer to contact with the first dielectric layer.