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    SEMICONDUCTOR POWER DEVICES AND METHODS OF MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR POWER DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    半导体功率器件及其制造方法

    公开(公告)号：US20150162423A1

    公开(公告)日：2015-06-11

    申请号：US14504847

    申请日：2014-10-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae-Hoon LEE ,  Tae-Geun KIM ,  Chan-Ho PARK ,  Hyun-Jung HER

    IPC: H01L29/739 ,  H01L21/761 ,  H01L21/265 ,  H01L29/06 ,  H01L29/66

    CPC classification number: H01L21/761 ,  H01L21/265 ,  H01L21/26513 ,  H01L29/0619 ,  H01L29/0834 ,  H01L29/402 ,  H01L29/4238 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813

    Abstract: A semiconductor power device includes a substrate, a plurality of gate electrode structures, a floating well region and a termination ring region. The substrate has a first region and a second region. A plurality of gate electrode structures is formed on the substrate, each of the gate electrode structures extends from the first region to the second region and includes a first gate electrode, a second gate electrode and a connecting portion, the first and second gate electrodes extend in a first direction, and the connecting portion connects end portions of the first and second gate electrodes to each other. The floating well region is doped with impurities between the gate electrode structures in the first region of the substrate, and the floating well region has a first impurity concentration and a first depth. The termination ring region is doped with impurities in the second region of the substrate, is spaced apart from the gate electrode structures, and has a ring shape surrounding the first region, and has the first impurity concentration and the first depth. The semiconductor power device may have a high breakdown voltage.

    Abstract translation: 半导体功率器件包括衬底，多个栅电极结构，浮动阱区和端接环区。 衬底具有第一区域和第二区域。 在基板上形成多个栅电极结构，每个栅电极结构从第一区延伸到第二区，并包括第一栅电极，第二栅电极和连接部分，第一和第二栅电极延伸 在第一方向上，连接部将第一和第二栅极的端部彼此连接。 浮置阱区域在衬底的第一区域中的栅电极结构之间掺杂杂质，并且浮置阱区域具有第一杂质浓度和第一深度。 终端环区域在衬底的第二区域中掺杂有杂质，与栅电极结构间隔开，并具有包围第一区域的环状，并且具有第一杂质浓度和第一深度。 半导体功率器件可具有高击穿电压。

    INTERFACE FOR MANAGING MESSAGES IN A MOBILE TERMINAL
    3.
    发明申请
    INTERFACE FOR MANAGING MESSAGES IN A MOBILE TERMINAL 审中-公开

    公开(公告)号：US20160380928A1

    公开(公告)日：2016-12-29

    申请号：US15239218

    申请日：2016-08-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chan-Ho PARK

    IPC: H04L12/58

    CPC classification number: H04L51/04 ,  H04L51/32 ,  H04L51/36 ,  H04L51/38

    Abstract: An interface method for a mobile terminal includes: receiving in the order of time and saving two or more types of messages corresponding to two or more types of first applications; integrating and configuring the two or more types of messages using a second application, which integrates and manages the two or more types of first applications; and displaying the two or more types of messages with the identification information on the type of each of the messages using the second application.

    INTERFACE FOR MANAGING MESSAGES IN A MOBILE TERMINAL
    4.
    发明申请
    INTERFACE FOR MANAGING MESSAGES IN A MOBILE TERMINAL 有权
    用于管理移动终端中的消息的接口

    公开(公告)号：US20130297712A1

    公开(公告)日：2013-11-07

    申请号：US13918035

    申请日：2013-06-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chan-Ho PARK

    IPC: H04L12/58

    CPC classification number: H04L51/04 ,  H04L51/32 ,  H04L51/36 ,  H04L51/38

    Abstract: An interface method for a mobile terminal includes: receiving in the order of time and saving two or more types of messages corresponding to two or more types of first applications; integrating and configuring the two or more types of messages using a second application, which integrates and manages the two or more types of first applications; and displaying the two or more types of messages with the identification information on the type of each of the messages using the second application.

    Abstract translation: 一种用于移动终端的接口方法包括：以时间顺序接收并保存对应于两种或多种类型的第一应用的两种或多种类型的消息; 使用第二应用来集成和配置两种或多种类型的消息，第二应用集成和管理两种或多种类型的第一应用; 以及使用所述第二应用来显示具有关于每个消息的类型的标识信息的两种或更多种类型的消息。

    INTERFACE FOR MANAGING MESSAGES IN A MOBILE TERMINAL
    5.
    发明申请
    INTERFACE FOR MANAGING MESSAGES IN A MOBILE TERMINAL 审中-公开

    公开(公告)号：US20190215285A1

    公开(公告)日：2019-07-11

    申请号：US16357404

    申请日：2019-03-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chan-Ho PARK

    IPC: H04L12/58

    CPC classification number: H04L51/04 ,  H04L51/32 ,  H04L51/36 ,  H04L51/38

    Abstract: An interface method for a mobile terminal includes: receiving in the order of time and saving two or more types of messages corresponding to two or more types of first applications; integrating and configuring the two or more types of messages using a second application, which integrates and manages the two or more types of first applications; and displaying the two or more types of messages with the identification information on the type of each of the messages using the second application.

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20150021658A1

    公开(公告)日：2015-01-22

    申请号：US14263441

    申请日：2014-04-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae-Hoon LEE ,  Tae-Geun KIM ,  Chan-Ho PARK ,  Hyun-Jung HER

    IPC: H01L27/082 ,  H01L29/739 ,  H01L29/10 ,  H01L29/40

    CPC classification number: H01L29/1095 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/407 ,  H01L29/7397

    Abstract: A semiconductor device includes an emitter electrode and a first field plate disposed on one surface of a substrate and spaced apart from each other, a collector electrode disposed on the other surface of the substrate, a trench gate disposed in the substrate, a field diffusion junction disposed in the substrate, and a first contact connecting the trench gate and the first field plate. The first field plate has a first part extending toward the emitter electrode with respect to the first contact and having a first width, and a second part extending toward the field diffusion junction with respect to the first contact and having a second width. The second width is greater than the first width.

    Abstract translation: 半导体器件包括发射极和布置在衬底的一个表面上且彼此间隔开的第一场板，设置在衬底的另一个表面上的集电极，设置在衬底中的沟槽栅，场扩散结 设置在所述基板中，以及连接所述沟槽栅极和所述第一场板的第一触点。 第一场板具有相对于第一接触部朝向发射极延伸并且具有第一宽度的第一部分和相对于第一接触部朝向场扩散接合部延伸并具有第二宽度的第二部分。 第二宽度大于第一宽度。

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20140042531A1

    公开(公告)日：2014-02-13

    申请号：US13963194

    申请日：2013-08-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chan-Ho PARK ,  Min-Kwon CHO ,  Takayuki GOMI ,  Nam-Ki CHO ,  Won-Sang CHOI

    IPC: H01L29/78

    CPC classification number: H01L29/7813 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734

    Abstract: A semiconductor device includes a trench in a substrate, a gate filling a part of the trench, a tilted source on a side wall of the trench, the tilted source partially overlapping the gate, an interlayer insulating film on the substrate and filling the trench, and a contact hole penetrating parts of the interlayer insulating film and the substrate and contacting the tilted source, the contact hole having a tilted surface at an angle that is equal to or larger than 80 degrees and smaller than 90 degrees.

    Abstract translation: 半导体器件包括衬底中的沟槽，填充沟槽的一部分的栅极，沟槽侧壁上的倾斜源，与栅极部分重叠的倾斜源，衬底上的层间绝缘膜并填充沟槽， 以及穿过所述层间绝缘膜和所述基板的部分的接触孔，并使所述倾斜源接触，所述接触孔具有等于或大于80度且小于90度的倾斜表面。

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